Introduction SiC substrate Process Expitaxial graphene on Si – face Expitaxial graphene on C – face Summary Graphene synthesis on SiC.

Slides:

Advertisements

Similar presentations

Thermo-compression Bonding

Advertisements

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Technology

What is graphene? In late 2004, graphene was discovered by Andre Geim and Kostya Novoselov (Univ. of Manchester) Nobel Prize in Physics Q1. How.

Aretouli E. Kleopatra 20/2/15 NCSR DEMOKRITOS, Athens, Greece

Quasi-vdW epitaxy of GaAs on Si Darshana Wickramaratne 1, Y. Alaskar 2,3, S. Arafin 2, A. G. Norman 4, Jin Zou 5, Z. Zhang 5, K.L Wang 2, R. K. Lake 1.

Frontier NanoCarbon Research group Research Center for Applied Sciences, Academia Sinica Applications of Graphitic Carbon Materials Dr. Lain-Jong Li (Lance.

Superconductivity in Diamond

Ch.1 Introduction Optoelectronic devices: - devices deal with interaction of electronic and optical processes Solid-state physics: - study of solids, through.

Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 Isotopes and ion beams in the study of dielectric/semiconductor interfaces. Ian.

Proposal for an FP6 STREP FET based on nanodevice ideas with SiC.

Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors NC STATE UNIVERSITY UCSB Effects of surface oxide on wafer bonding.

Graphene Castro-Neto, et al. Rev. Mod. Phys. 81 (2009) 109

Techniques of Synthesizing Wafer-scale Graphene Zhaofu ZHANG

Bottom-up Technology Toshitake Takahashi. Background on the synthesis of graphene sheet and graphene nanoribbon W. A. de Heer, et. al. Science 2006, 312,

IBPOWER Kick off meeting – 07/02/08 Specific issues relating to plasma-MBE Growth under group III-rich versus group V-rich conditions Control of composition.

Thin film deposition techniques II. Chemical Vapor deposition (CVD)

Chemical Vapor Deposition ( CVD). Chemical vapour deposition (CVD) synthesis is achieved by putting a carbon source in the gas phase and using an energy.

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #5.

Thin Film Deposition Prof. Dr. Ir. Djoko Hartanto MSc

Surface micromachining

McGill Nanotools Microfabrication Processes

Lecture 12.0 Deposition. Materials Deposited Dielectrics –SiO2, BSG Metals –W, Cu, Al Semiconductors –Poly silicon (doped) Barrier Layers –Nitrides (TaN,

Nanomaterials - carbon fullerenes and nanotubes Lecture 3 郭修伯.

The wondrous world of carbon nanotubes Final Presentation IFP 2 February 26, 2003.

Philip Kim Department of Physics Columbia University Toward Carbon Based Electronics Beyond CMOS Devices.

반도체 제작 공정 재료공정실험실 동아대학교 신소재공학과 손 광 석 隨處作主立處開眞

Plasma-Enhanced Chemical Vapor Deposition (PECVD)

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #2. Chip Fabrication  Silicon Ingots  Wafers  Chip Fabrication Steps (FEOL, BEOL)  Processing Categories 

Molecular Dynamic Simulation of Atomic Scale Intermixing in Co-Al Thin Multilayer Sang-Pil Kim *, Seung-Cheol Lee and Kwang-Ryeol Lee Future Technology.

Tobe Laboratory Kyohei Kaneko. Introduction ・ Concept of 2D Polymer ・ Graphene ・ Chemical Reaction on The Surface Observation Conditions of STM ・ Liquid/Solid.

M.H.Nemati Sabanci University

ECEE 302 Electronic Devices Drexel University ECE Department BMF-Lecture Page -1 Copyright © 2002 Barry Fell 23 September 2002 ECEE 302: Electronic.

Epitaxial graphene Claire Berger GATECH- School of Physics, Atlanta CNRS-Institut Néel, Grenoble NIRT Nanopatterned Epitaxial graphite.

Gas-to Solid Processing surface Heat Treating Carburizing is a surface heat treating process in which the carbon content of the surface of.

Graphene group Introduction What do we manage (technology)?

MICRONOVA Centre for micro- and nanotechnology TKK Veli-Matti Airaksinen Some Aspects of Epitaxial Silicon (Based on my previous life at Okmetic.

Crystal Growth of III/V Semiconductor Nanowires Kobi Greenberg.

Techniques of synthesizing mono-layer Molybdenum Sulfide (MoS 2 ) Wu Kam Lam.

Epitaxial Deposition Daniel Lentz EE 518 Penn State University March 29, 2007 Instructor: Dr. J. Ruzyllo.

Reminders Quiz#2 and meet Alissa and Mine on Wednesday –Quiz covers Bonding, 0-D, 1-D, 2-D, Lab #2 –Multiple choice, short answer, long answer (graphical.

National Science Foundation GOALI: Epitaxial Growth of Perovskite Films and Heterostructures by Atomic Layer Deposition and Molecular Beam Epitaxy John.

Synthesis of diamond-like carbon films with super-low friction and wear properties A. Erdemir, O.L. Eryilmaz, and G. Fenske J. Vac. Sci. Technol. A 18(4),

Introduction EE1411 Manufacturing Process. EE1412 What is a Semiconductor? Low resistivity => “conductor” High resistivity => “insulator” Intermediate.

Epitaxial superconducting refractory metals for quantum computing

Conductive epitaxial ZnO layers by ALD Conductive epitaxial ZnO layers by ALD Zs. Baji, Z. Lábadi, Zs. E. Horváth, I. Bársony Research Centre for Natural.

S. A. Giamini. Graphene A hexagonal honeycomb lattice of carbon. In its basic form it is a one-atom thick (2D) sheet. Interesting properties: Better electric.

Properties of Ionic and Covalent Compounds

11/8/ Plasma Assisted Surface Modification: Low Temperature Bonding SFR Workshop November 8, 2000 Yonah Cho, Adam Wengrow, Chang-Han Yun Nathan Cheung.

Thin Film Deposition. Types of Thin Films Used in Semiconductor Processing Thermal Oxides Dielectric Layers Epitaxial Layers Polycrystalline Silicon Metal.

. Anatoli Korkin Nano & Giga Solutions Outline: Retrospection and Forecast Atomic Scale Materials Design A few steps from atoms to devices Future Research.

2-D Nanostructure Synthesis (Making THIN FILMS!)

A NEW MATERIAL- BISMUTH OXIDE THIN FILMS Linna Du Environmental Engineering.

Techniques of synthesizing wafer-scale graphene GE Xinyuan 26, Nov

Nano and Giga Challenges in Microelectronics Symposium and Summer School, Cracow, September 13-17, 2004 Atomic scale observation of interface defect formation.

Diodes II: Fabrication by Doping MS&E 362: Materials Lab III Nov. 8.

Saptarshi Das, PhD 2. Adjunct Birck Research Scholar Birck Nanotechnology Center Purdue University West Lafayette, Indiana Post-doctoral Research.

Graphene Abstract -Origin of graphene -Structure

Deposition Techniques

Basic Planar Processes

Wet Oxidation and Hydrogen Incorporation on 4H-SiC (c-face)

Graphène et BN bientôt inséparables ?

MBE Growth of Graded Structures for Polarized Electron Emitters

Riphah International University, Lahore

CMOS Process Flow.

1.6 Magnetron Sputtering Perpendicular Electric Magnetic Fields.

SEMICONDUCTORS Properties

BONDING The construction of any complicated mechanical device requires not only the machining of individual components but also the assembly of components.

Coordination # = 8 2 Particles per Unit Cell Body-Centered Cubic

Epitaxial Deposition

Presentation transcript:

Introduction SiC substrate Process Expitaxial graphene on Si – face Expitaxial graphene on C – face Summary Graphene synthesis on SiC

Graphene synthesis methods Graphene Synthesis Top down Bottom Up Mechanical exfoliation Chemical exfoliation Chemical synthesis Pyrolysis Epitaxial Growth CVD Other methods

Epitaxial growth Single crystalline film on a single crystalline substrate. SiC substrate graphene Feasibility and scalability High temperature process, difficult graphene transfer from SiC to other sub, expensive substrate. Anneal Si

SiC substrate Hexagonal polytypism. (4H, 6H) 3 carbon – 1 Si ( bilayer ) – 1 carbon linking another layer Polar: Si – face (0001), C – face (000ī) A B C B

Surface cleaning ( H2 etching, furnace, Ar + H2, ~1 atm ) or CMP Surface oxide removing ( heating ~1000°C, UHV, Si flux )  SiO gas Graphene formation - UHV, high temp - Ar overpressure, more high temp Process

Si – face (0001) Unit vector: SiC 3.08A, graphene 2.46A Rotating 30°C formation to align First graphene layer covalent bonding with Si. Structural graphene but no electrical property (ZLG)

From 2 nd graphene layer (MLG), forming π bonding. Intrinsic doping n~10^13 due to the ZLG-SiC interface. Bilayer intrinsic doping and band gap opening Si – face (0001)

Transfer doping - Deposit electron acceptor - ex. Antimony, bismuth, F4-TCNQ ( electron acceptor molecule. Intercalation - Decoupling ZLG from SiC by putting other Si – face (0001)

Rotating 30° or ± 2.2° [10ī0] formation. Electrically decoupled between layers Stacks of layer  single layer electronic properties. C – face (000ī)

Si – faceC - face -Uniform single layer thickness control ( Ar overpressure ) -No effect of Ar overpressure -Uniformity control difficult -Defect free from SIC substrate-Surface defect -High crystal quality-Process control difficult cm2/VS (N-doped) cm2/VS (charge-neutral) cm2/VS (N-doped) -150,000 cm2/VS (charge-neutral) SUMMARY

J. Hass, et al. PRL 100, (2008) C. Riedl, et al. J. Phys. D: Appl. Phys. 43 (2010) Zachary R. Robinson, et al. CARBON 81 (2015) J. Hass, et al. J. Phys: Condens. Matter 20 (2008) U. Starke, et al. MRS Bulletin 37 (DEC. 2012) Phillip N. First, et al. MRS Bulletin 35 (APR. 2010) Reference