1. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 Isotopes and ion beams in the study of dielectric/semiconductor interfaces. Ian Vickridge Système d’Analyse par Faisceau d’Ions Rapides Institut des NanoSciences de Paris Paris, France H.J. von Bardeleben, J.-L. Cantin, C. Deville, J.-J. Ganem, M. D'Angelo, and I. Trimaille.

2. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 Growth => atomic transport Isotopes - 6/7 Li, H/D, 3/4 He, 10/11 B, 12/13 C, 14/15 N, 16/17/18 O, 25/26 Mg, 28/29/30 Si Growth => défautselectron paramagnetic resonance First steps Deposition Chemical reaction : thermodynamiques, kinetics Diffusion, atomic transport Épitaxy, chemical order Structure, composition of the surface 2D mobility, transport Thermal growth Sticking/chemical reaction Interface formation Epitaxy (or not …) heat Internal surfaces : interfaces of composition, structure Defects, stress, relaxation treatment under controlled atmosphere Thin film growth processes

3. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7  Thermal oxidation of Si and SiC Diffusion barrier n + n + gate dielectric Plug Capacitor Very high  material Electrodes 29 Si, Si 13 C SiO 2 16/17/18 O 2 + + + + + - - - - -  d V Gate electrode MOSFET + + + + +  SiO 2 /Si High technological interest Système modèle Système très très étudié - - - - -

4. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 Manipulation of the interface Si(nano)/SiO 2 (with B. Gallas, C. Kao, and I. Stenger, INSP) SiO 2 /Si Interface amorphous silica doped Er 3+ 15 NH 3, 15 N 18 O 13 C 18 O, 17/18 O 2 etc First experiments underway Study the effects of interface modification on nano-cristaux->Er 3+ energy transfer Formation of nanocristals of SiC, or Si with SiC ( 13 C …) 'skin' Modification grain size by selective oxidation and oxynitridation Isotopes, Accel, EPR (large internal surface), TEM, ellipsometry, photoluminescence etc… pump transfer ? Emission 1.54  m telecoms …

5. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 Tracing with 29 Si, Manipulation of the SiC/SiO 2 interface SiC 29 Si deposited or implanted (CSNSM, Orsay) oxidation SiCSiO 2 SiCSiO 2 Ar, NO, CO, NH 3, … then, 18 O 2 as probe of chemical reactivity of interface Initial experiments recently performed : results most promising

6. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 SiC nano-crystals SiSiO 2 CO 1100°C With G. Battisitig, A Pongracz, Z. Hajnal MFA-KFKI, Budapest SiC nano-crystals epitaxially embedded in Si SEM image after chemical removal of SiO 2 overlayer 29 Si substrate, Si 16 O 2,Si 18 O 2, 12 C 16 O, 13 C 18 O …

7. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 SiC nanocrystals SiO 2 /Si thermal (100) (111) (110) Growth mechanisms? Atomic transport mechanisms? Kinetics, activation energies?

8. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 13 C Analysis (work in progress!) 13 C(p,p) 13 C Strong resonance (50-100  R ) at backward angles near 1.5 MeV Milne PhysRev 1954 in Jarjis, numerous pre-1956 data in Jarmie and Seagrove 13 C(p,  ) 13 C Strong narrow (~ 100eV) resonance at 1.746 MeV Nucl Data Tables Ajzenberg-Selove, applies in Vickridge thesis 13 C( ,  ) 13 C Strong resonance around 2.7 MeV at backward angle Barnes PhysRev 1965 and Kerr PhysRev 1968 in IBANDL

9. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 13 C Analysis 13 C(d,p) 13 C Q m =5952 keV Useful yield in sub 2 MeV range. Marion PhysRev 1956 and Colaux et al NIMB and IBANDL

10. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 13 C Analysis 13 C(d,  ) 11 B Q 0 = 5167.89 keV Q 1 = 3043.2 Q 2 = 722.9 Useful yield in sub 2 MeV range. Marion PhysRev 1956 and Colaux et al NIMB and IBANDL

11. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 13 C Analysis - Summary 13 C(p,  ) 13 C No further work required from ND perspective ? 13 C(p,p) 13 C Useful looking resonance at 1.5 MeV. New measurements needed?  (  )? Evaluation? 13 C( ,  ) 13 C Useful looking resonance near 2.7 MeV. New measurements needed?  (  )? Evaluation? 13 C(d,p) 14 C Useful  below 2 MeV. Further measurements needed for succesful valuation? 13 C(d,  ) 11 B Useful  below 2 MeV. Some discrepancies. Further measurements needed for succesful valuation?

12. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 15 N Analysis (work in progress too!) 15 N(p,  ) 12 C Wonderful narrow (  =100eV) resonance at 429 keV widely used by several groups 15 N(p,p) 15 N useful? resonance near rising to near 3.5  R near 900 keV Hagendorn PhysRev 1957 in Jarjis 15 N( ,  ) 15 N Useful? resonance near1900 keV Smotrich PhysRev 1961 from IBANDL

13. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 15 N Analysis 15 N(d,p) 16 N Q 0 = 264.53 keV Unusable 15 N(p,  0 ) 12 CQ 0 = 4965 keV Useful cross section. Widely used. Sawicki NIMB in IBANDL

14. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 15 N Analysis 15 N(d,  0 ) 13 C Q 0 = 7687 keV Useful  below 2 MeV Sawicki, Vickridge NIMB in IBANDL

15. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 15 N Analysis - Summary 15 N(p,  ) 12 C No further work required from ND perspective? 15 N(p,p) 15 N 15 N( ,  ) 15 N 15 N(d,  0 ) 13 C Useful looking resonance near 900 keV. New measurements needed?  (  )? Evaluation? Possibly useful resonance near 1900 keV. New measurements needed?  (  )? Evaluation? Useful  below 2 MeV for profiling thicker samples. Some discrepancies, further measurements needed for succesful valuation?

16. Institut des NanoSciences de Paris CNRS et Universités de Paris 6 et 7 Facilities available at INSP Special UHV and high vacuum furnaces for using (expensive) isotopically labelled gases 2.5 MV Van de Graaff High energy p, d, 3 He,  detection cp, , x channelling Clean room