ECE 695V: High-Speed Semiconductor Devices Peide (Peter) Ye Office: Birck Tel: Course website: /~yep/courses.htm Location: EE005 Time: T/Th 9:00-10:15 am Office Hour: T/Th 10:30-11:45

Course Description: As semiconductor device geometry miniaturizes, the device becomes faster and some devices move into the quantum-effect region. These higher-speed devices are the key components for future electronic systems in communications, computers, control, and consumer applications. This course covers the physics and operational principles of these devices to meet the needs of microelectronics in the 21st century. This course emphasizes the integration of the state-of-the-art technologies such as high-k dielectrics, SiGe devices, SiC and GaN based power devices. Course Objectives: This course is intended for graduate students in MN and related areas who are either i) interested in pursuing research in semiconductor materials, structures or devices, or ii) seeking the broad device background on the-state-of-the-art technologies for a future R&D career in the microelectronic industry. FundamentalsState-of-the-art

Required Textbook: Class Notes Recomended References: 1. Modern Semiconductor Device Physics, Edited by S.M. Sze ISBN High-Speed Semiconductor Devices, Edited by S.M. Sze ISBN The Science and Engineering of Micro- electronics Fabrication by Stephen A. Campbell ISBN Physics of Semiconductor Devices by S.M. Sze and Kwok K. Ng (Third Edition) ISBN-10:

ECE 695V High-Speed Semiconductor Devices—Spring 2015 Schedule Time: Tuesday and Thursday 9:00-10:15 am Credit:3 Location:EE005 DataTopics 1/13 TOverview of Modern Semiconductor Devices 1/15 ThSemiconductor Epitaxial Growth (MBE and MOCVD) 1/20 TChemical Vapor Deposition (CVD) 1/22 ThAtomic Layer Deposition (ALD); High-k dielectrics for ultimate CMOS 1/27 THomogeneous Field-Effect Transistors (III-V MESFET) 1/29 ThHomogeneous Field-Effect Transistors (III-V MESFET and JFET) 2/3 THeterostructure Field-Effect Transistors (III-V HFET) 2/5 ThHeterostructure Field-Effect Transistors (III-V HEMT) 2/10 TDiscussion on III-V MOSFET Research 2/12 ThDiscussion on GaN HEMT Research 2/17 TBipolar Transistor Operation, Silon Bipolar Transistor 2/19 ThHeterojunction Bipolar Transistor (III-V HBT) 2/24 TScaled MOSFETs, CMOS/Bi CMOS 2/26 ThStrain-Si and SiGe based MOSFETs 3/3 TDiscussion on Ge MOSFET Research 3/5 ThDiscussion on CNTFET Research 3/10 TPower MOSFET 3/12 ThSi LDMOSFET 3/17 TSiC Power Devices 3/19 ThGaN Power Devices 3/24 TQuantum-Effect Devices (Resonant-Tunneling Diodes and RTBTs) 3/26 ThHot-Electron Devices 3/31 TDiscussion on Single-Electron-Transistors (SET) and Quantum Dots Research 4/2 ThActive Micowave Devices 4/7 TDiscussion on THz transistor Research (i.e. UIUC work) 4/9 ThHigh-Speed Photonic Devices (LED, Pin Photodetector, Avalanche Photodetector) 4/14 THigh-Speed Photonic Devices (Laser) 4/16 ThDiscussion on VCSEL Research 4/21 TReview 4/23 ThFinal Exam Introduction Materials FET HBT CMOS Power Devices Quantum Devices Microwave Devices Photonic Devices

Course Grading Exam 1: 25% - Material growth, FET Exam 2: 25% - HBT, CMOS Home work / literature research: 25% Final: 25%

From 612--Prof. M.Lundstrom yep/

Lecture 1: Materials Insulator semiconductor metal (1) DOS (2) Mobility

Electrical Properties of Semiconductors -T.P.Ma

GaAs InP GaP ……

No Optical Application

Homework: (1) Read “High-speed” pp.1-32 (2) What is the E g, μ e, μ h, V sat of Si, Ge, GaAs, InP, InAs and InSb ? Use “google”, literatures and references to find out one of the wet etching and dry etching recipes of these 6 substrates. Due time: Thursday 9:00 am before the next lecture.