1. ECE 695V: High-Speed Semiconductor Devices Peide (Peter) Ye Office: Birck Tel: Course website: /~yep/courses.htm Location: EE115 Time: T/Th 12:00-1:15 pm Office Hour: T/Th 1:30-2:30 pm

2. Fundamentals State-of-the-art
Course Description: As semiconductor device geometry miniaturizes, the device
becomes faster and some devices move into the quantum-effect region. These
higher-speed devices are the key components for future electronic systems in
communications, computers, control, and consumer applications. This course
covers the physics and operational principles of these devices to meet the needs
of microelectronics in the 21st century. This course emphasizes the integration of
the state-of-the-art technologies such as high-k dielectrics, SiGe devices, SiC and
GaN based power devices.
Course Objectives: This course is intended for graduate students in MN and 
related areas who are either i) interested in pursuing research in semiconductor
materials, structures or devices, or ii) seeking the broad device background on
the-state-of-the-art technologies for a future R&D career in the microelectronic
industry. 
Fundamentals
State-of-the-art

4. Required Textbook: Class Notes Recomended References:
Modern Semiconductor Device Physics,
Edited by S.M. Sze ISBN
2. High-Speed Semiconductor Devices,
Edited by S.M. Sze ISBN
3. The Science and Engineering of Micro-
electronics Fabrication
by Stephen A. Campbell ISBN
4. Physics of Semiconductor Devices
by S.M. Sze and Kwok K. Ng (Third Edition)
ISBN-10:     

5. Introduction Materials FET HBT CMOS Power Devices Quantum Devices
ECE 695V High-Speed Semiconductor Devices—Spring 2017 Schedule
Time: Tuesday and Thursday 12:00-1:15 pm Credit:3 Location:EE115
Data
Topics
1/10 T
Overview of Modern Semiconductor Devices
1/12 Th
Semiconductor Epitaxial Growth (MBE and MOCVD)
1/17 T
Chemical Vapor Deposition (CVD)
1/19 Th
Atomic Layer Deposition (ALD); High-k dielectrics for ultimate CMOS
1/24 T
Homogeneous Field-Effect Transistors (III-V MESFET)
1/26 Th
Homogeneous Field-Effect Transistors (III-V MESFET and JFET)
1/31 T
Heterostructure Field-Effect Transistors (III-V HFET)
2/2 Th
Heterostructure Field-Effect Transistors (III-V HEMT)
2/7 T
Discussion on III-V MOSFET Research
2/9 Th
Discussion on GaN HEMT Research
2/14 T
Bipolar Transistor Operation, Silon Bipolar Transistor
2/16 Th
Heterojunction Bipolar Transistor (III-V HBT)
2/21 T
Scaled MOSFETs, CMOS/Bi CMOS
2/23 Th
Strain-Si and SiGe based MOSFETs
2/28 T
Discussion on Ge MOSFET Research
3/2 Th
Discussion on CNTFET Research
3/7 T
Power MOSFET
3/9 Th
Si LDMOSFET
3/14 T
SiC Power Devices
3/16 Th
GaN Power Devices
3/21 T
Quantum-Effect Devices (Resonant-Tunneling Diodes and RTBTs)
3/23 Th
Hot-Electron Devices
3/28 T
Discussion on Single-Electron-Transistors (SET) and Quantum Dots Research
3/31 Th
Active Micowave Devices
4/4 T
Discussion on THz transistor Research (i.e. UIUC work)
4/6 Th
High-Speed Photonic Devices (LED, Pin Photodetector, Avalanche Photodetector)
4/11 T
High-Speed Photonic Devices (Laser)
4/13 Th
Discussion on VCSEL Research
4/18 T
Review
4/20 Th
Final Exam
Introduction
Materials
FET
HBT
CMOS
Power Devices
Quantum Devices
Microwave Devices
Photonic Devices

6. Course Grading Exam 1: 40% - Material growth, FET, HBT Exam 2: 40%
- CMOS, Power, Photonics
Home work / literature research:
20%

7. yep/
From 612--Prof. M.Lundstrom

8. Lecture 1: Materials
metal
semiconductor
Insulator
DOS
Mobility

9. Electrical Properties of Semiconductors
-T.P.Ma

14. GaAs
InP
GaP ……

15. No Optical Application

23. Homework:
Read “High-speed” pp.1-32
What is the Eg, μe, μh, Vsat of Si,
Ge, GaAs, InP, InAs and InSb ?
Use “google”, literatures and
references to find out one of
the wet etching and dry etching
recipes of these 6 substrates.
Due time: Thursday 12:00 pm
before the next lecture.