1. Lecture 3: Semiconductor Epitaxy Technologies (II) and
Insulator Growth Technologies (I)

2. -Horst Stroemer

8. Prof. Tim Sands
Prof. Mike Capano

10. MO Procusors
Bubblers

11. Control temperature >> Control MO Procusor Vapor Pressure >> Epi-layer Growth Rate

13. Dielectric Technologies: Chemical Vapor Deposition
1. APCVD
SiO2
Si3N4

14. Dielectric Technologies: Chemical Vapor Deposition
2. LPCVD
Low Pressure = Torr
Reduce gas phase nucleation

15. Dielectric Technologies: Chemical Vapor Deposition
3. PECVD
PECVD
Partially conformal
CVD
Conformal
HDP
(High Density Plasma)
CVD
Un-conformal

16. Si3N4 Process Temperature at 300 C to 400 C
Two most important insulating films grown by PECVD
Si3N Process Temperature at 300 C to 400 C
mixtures of diluted Ar or He as carrier gas
Si from SiH4
N from NH3 or N2
SiO Similar process
Si from SiH4 (TEOS used for safety)
O from O2 (No plasma needed)
O from CO2 (C contamination)
O from N2O preferred

21. Homework: The growth of GaAs on silicon wafers is able to provide
large wafers for IC fabrication. If you wanted to extend
this process to InP and InAs, what would you need to
find out to determine whether or not it would be possible?
Assume that you wanted to deposit Al2O3 on the wafer
using CVD. What precursors might you use? What
problems could you foresee?
Due on Thursday 1/17/2019.