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Welcome to EE 130/230A Integrated Circuit Devices

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Presentation on theme: "Welcome to EE 130/230A Integrated Circuit Devices"— Presentation transcript:

1 Welcome to EE 130/230A Integrated Circuit Devices
Instructors: Prof. Tsu-Jae King Liu TA: Peng Zheng Web page: bSpace: EE 130/230A Fall 2013 Piazza: Objectives: Fundamental understanding of the working principles of semiconductor devices used in modern ICs. An ability to design a transistor to meet performance requirements within realistic constraints.

2 Schedule Lectures (241 Cory): TuTh 2-3:30 PM
Discussion Section (beginning Tuesday 9/3): Section 101 (247 Cory): Mo AM Section 102 (247 Cory): We 12-1 PM Office Hours: Prof. Liu (225 Cory): Mo 4-5 PM Peng Zheng (288 Cory): Tu 9-10 AM and We 4-5 PM EE130/230A Fall 2013 Course Overview, Slide 2

3 Relation to Other Courses
Prerequisite: EECS40: Basic properties of semiconductors; basic understanding of transistor operation  Familiarity with the Bohr atomic model Relation to other courses:  EE230A is prerequisite for EE230B (Solid State Devices) EE130 is also helpful (but not required) for IC analysis and design courses such as EE140 and EE141, as well as for the microfabrication technology course EE143 EE130/230A Fall 2013 Course Overview, Slide 3

4 Reading Material Textbook:
Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996) Reference: Modern Semiconductor Devices for Integrated Circuits by C. Hu (Prentice Hall, 2009) EE130/230A Fall 2013 Course Overview, Slide 4

5 Grading Letter grades will be assigned based approximately on the following scale: A+: A: A-: B+: B: B-: C+: C: C-: D: F: <50 Homework (posted online) due Th (beginning of class) late homeworks not accepted! Design project assigned by 11/7, due by 12/12 You may work in pairs 6 Quizzes 25 minutes each closed book (notes allowed) no make-up quizzes  Final exam Tu 12/17 8AM to 11AM closed book (7 pages of notes allowed) 10% 20% 30% 40% EE130/230A Fall 2013 Course Overview, Slide 5

6 Miscellany Special accommodations: Academic (dis)honesty
Students may request accommodation of religious creed, disabilities, and other special circumstances. Please meet with Prof. Liu to discuss your request, in advance. Academic (dis)honesty Departmental policy will be strictly followed Collaboration is encouraged Classroom etiquette: Arrive in class on time! Bring your own copy of the lecture notes. Turn off cell phones, etc. Avoid distracting conversations EE130/230A Fall 2013 Course Overview, Slide 6

7 The Integrated Circuit (IC)
An IC consists of interconnected electronic components in a single piece (“chip”) of semiconductor material. In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in germanium. The first planar IC (actual size: 0.06 in. diameter) In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in silicon using SiO2 as the insulator and Al for the metallic interconnects. EE130/230A Fall 2013 Course Overview, Slide 7

8 From a Few, to Billions of Components
By connecting a large number of components, each performing simple operations, an IC that performs complex tasks can be built. The degree of integration has increased at an exponential pace over the past ~40 years. Moore’s Law: The # of devices on a chip doubles every ~2 yrs, for the same chip price. Intel Ivy Bridge Processor 1.4B transistors, 160 mm2 300mm Si wafer EE130/230A Fall 2013 Course Overview, Slide 8

9 CMOS generation: 1 um • • 180 nm • • 22 nm
Impact of Moore’s Law Market Growth Investment Transistor Scaling Higher Performance, Lower Cost # DEVICES (MM) CMOS generation: 1 um • • 180 nm • • 22 nm YEAR EE130/230A Fall 2013 Course Overview, Slide 9

10 The Nanometer Size Scale
MOSFET Carbon nanotube 1 micrometer (1 mm) = 10-4 cm; 1 nanometer (nm) = 10-7 cm EE130/230A Fall 2013 Course Overview, Slide 10

11 Metal-Oxide-Semiconductor (MOS) Field-Effect Transistor (FET)
Course Overview Semiconductor Fundamentals – 3 weeks Metal-Semiconductor Contacts – 1 week P-N Junction Diode – 3 weeks MOS Capacitor – 2 weeks MOSFET – 2 weeks Modern CMOS Technology – 1 week Bipolar Junction Transistor – 2 weeks Metal-Oxide-Semiconductor (MOS) Field-Effect Transistor (FET) EE130/230A Fall 2013 Course Overview, Slide 11


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