SU8 process Soft Bake (SB) for thin SU8

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Presentation transcript:

SU8 process Soft Bake (SB) for thin SU8 SU-8 Testing SU8 process Soft Bake (SB) for thin SU8

“Control” Recipe 10s @ 500rpm; 30s @ 2000rpm Soft Bake 60s @ 93°C Exposure 8s @ 275 W PEB 60s @ 93°C Develop 4min in SU8 developer SU8 developer rinse IPA rinse/ Nitrogen Dry

1st Run of Tests 4 samples; 8 devices/sample 4 Wells, 4 Blanks/sample S1: “Control”:All shorted. Avg Well(W)- 8.6Ω Avg Blank(B)-10Ω, misaligned. S2: 8min (Evap/PEB)Avg W-2.7±0.8Ω B-11MΩ Avg Blank Cap: 15pF 0/3 Short S3: 13min(Evap/PEB)Avg W-4.9Ω B-5.6±7.7MΩ Avg Blank Cap: 17pF 1/2 Short S4: 15min(Evap/PEB)Avg W-3.8±1Ω B-11MΩ Avg Blank Cap: 17pF 0/2 Short Cracking seen in S2, S3, S4 Need to get stats

2nd set of test samples Summary 2 “Controls” 2.5 min SB @ 60°C; 1min PEB @ 93°C 5 min SB @ 60°C; 1min PEB @ 93°C Too Many Controls

2nd Test Results “Control 1” S5 Device Capacitance(pF) Resistance(Ω) Type 1 -1 29.4 B 2 0.5 W 3 9.38 3.7x10^6 4 24 5 6 7 421 8 17 Summary: W: 4/4 Shorted B: 3/4 Shorted Well Average R: 12.1 ± 10Ω Excluding 3 Blank Average R: 158± 230Ω Blank Capacitance: 9.38pF

“Control 2” S6 Device Capacitance(pF) Resistance(Ω) Type 1 Damaged 9.7 4.6x10^6 W 2 9.33 8.3x10^6 B 3 Damaged 9.61 3.04x10^5 4 9.4 1.05x10^7 5 -1 142 6 9.25 1.1x10^7 7 46 8 10.3 12000 Summary: W: 2/4 Shorted B: 0/4 Shorted Avg Blank Capacitance: 9.57± 0.5pF Avg Well Resistance: 94± 68Ω

2.5min SB S7 Device Capacitance(pF) Resistance(Ω) Type 1 -1 13.4 W 2 428 B 3 10.8 4 294 5 3.7 6 5.7 7 4.1 8 11.6 Summary: All Shorted Avg Blank Resistance: 184.8± 211Ω Avg Well Resistance: 8± 4.9Ω

5min SB S8 Device Capacitance(pF) Resistance(Ω) Type 1 -1 4.8 W 2 16 B 3 1.9 4 44 5 4.3 6 Error 7* 15.16 1.76 8 15.25 0.57x10^6 Summary: W: 3/4 Shorted B: 3/4 Shorted Avg Blank Resistance: 0.19± 0.33MΩ Avg Well Resistance: 3.7± 1.6Ω 7*: Remeasured and same effect ignored in the average.

“Control 2” 20x

“Control 2” 100x

“Control1” 100x

2.5min SB 100x

5min SB 100x

3rd SU8 tests 2 samples, 8 Devices S9: 8min SB @ 60°C, PEB 60s @ 95°C S10: 10min SB @60°C,16s Exp, PEB 60s @ 95°C

S9 Back Contact Broken no Resistances Measured Capacitances Device Capacitance(pF) Resistance(Ω) Type 1 -1 W 2 B 3 12 4 19 5 6 7 8 20 Back Contact Broken no Resistances Measured Capacitances W: 2/4 Shorted B: 1/4 Shorted Avg Capacitance Well: 19.3± 0.6pF

S10 Device Capacitance(pF) Resistance(Ω) Type 1 -1 4.5 W 2 18 B 3 6.7 121 5 3.9 6 127 7 8 118 Summary: W: 4/4 Shorted B: 4/4 Shorted Avg Blank Capacitance: ± pF Avg Well Resistance: 5.0± 1.2Ω Avg Blank Resistance: 96± 52Ω