1. Test Soft Bake (SB) and Post Exposure Bake (PEB)
SU-8 Testing (v1b)
Thin SU8 on glass slide
Test Soft Bake (SB) and Post Exposure Bake (PEB)

2. “Control” Recipe Spin Coating: 10s @ 500rpm; 30s @ 2000rpm
(expected thickness?)
Soft Bake (SB): 93°C
Exposure: 275 W
PEB: 93°C
Develop: 4min in SU8 developer
SU8 developer rinse
IPA rinse/Nitrogen Dry

3. 1st Set of Tests 4 samples; 8 devices/sample
4 Wells (W)+4 Blanks (B)/sample
S1: “Control”: Misaligned (Top contacts don’t fully overlap guide circles on bottom. This could result in the top contact not covering the well); All shorted; R(W) ~8.6Ω; R(B)~10Ω
Test Parameters:
SB (RT Evap for 30min) and Vary PEB 60°C?
S2: 8min PEB: R(W)=(2.7±0.8)Ω; R(B)=11MΩ±0; C(B) = 15 ±.1 pF
S3: 13min PEB: R(W)=(4.9±?)Ω; R(B=(5.6±7.7)MΩ; C(B)=17 ±.5?
S4: 15min PEB: R(W)=(3.8±1)Ω; R(B)=(11±0)MΩ; C(B)=? ±?
Cracking patterns seen in S2, S3, S4
Need to get stats

4. 2nd set of test samples Summary
2 “Controls”
Test Parameters:
1 min 93°C and Vary SB 60°C
SB: 2.5 min
SB: 5 min
Too Many Controls

5. 2nd Test Results “Control 1” S5
Device
Capacitance(pF)
Resistance(Ω)
Type 1 -1
29.4 B 2
0.5 W 3
9.38
3.7x10^6 4 24 5 6 7
421 8 17
Summary: W: 4/4 Shorted B: 3/4 Shorted
R(Well): (12.1 ± 10) Ω
Excluding #3 R(Blank): (158± 230) Ω
Blank Capacitance: 9.38 pF

6. “Control 2” S6 Device Capacitance(pF) Resistance(Ω) Type
1 Damaged (Too High Voltage)
9.7
4.6x10^6 W 2
9.33
8.3x10^6 B
3 Damaged (Too High Voltage)
9.61
3.04x10^5 4
9.4
1.05x10^7 5 -1
142 6
9.25
1.1x10^7 7 46 8
10.3
12000
Summary:
W: 2/4 Shorted (2 Damaged by applying too high a voltage)
B: 0/4 Shorted
R(Well): (94± 68) Ω; C(Blank): (9.57± 0.5) pF

7. 2.5min SB S7 Device Capacitance(pF) Resistance(Ω) Type 1 -1 13.4 W 2
428 B 3
10.8 4
294 5
3.7 6
5.7 7
4.1 8
11.6
Summary: All Shorted
R(Blank): 184.8± 211Ω
R(Well): 8± 4.9Ω

8. 5min SB S8 Device Capacitance(pF) Resistance(Ω) Type 1 -1 4.8 W 2 16 B3
1.9 4 44 5
4.3
6 Error? - 7*
15.16
1.76 8
15.25
0.57x10^6
Summary:
W: 3/4 Shorted (why not 4/4?) B: 3/4 Shorted
R(Blank): (30± 20)Ω (#8 excluded)
R(Well): (3.7± 1.6) Ω
7*: Remeasured and same effect ignored in the average. Strange that there is a Capacitance and low Resistance, Remeasured C and still high

9. “Control 2” 20x

10. “Control 2” 100x

11. “Control1” 100x

12. 2.5min SB 100x

13. 5min SB 100x

14. S9 Device Capacitance(pF) Resistance(Ω) Type 1 -1 W 2 B 3 12 4 19 5 67 8 20
Back Contact Broken no Resistances
Measured Capacitances
W: 2/4 Shorted B: 1/4 Shorted
Avg Capacitance Well: 19.3± 0.6pF

15. S10 Device Capacitance(pF) Resistance(Ω) Type 1 -1 4.5 W 2 18 B 3 6.7
121 5
3.9 6
127 7 8
118
Summary: W: 4/4 Shorted B: 4/4 Shorted
Avg Well Resistance: 5.0± 1.2Ω
Avg Blank Resistance: 96± 52Ω
Double Exposed (16s)