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Presentation transcript:

Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. Chapter 6 High-Speed CMOS Logic Design Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

6.1 Introduction

6.1 Introduction

5.6.1 Basic Bistable Circuit

6.1 Introduction

6.2 Switching Time analysis

6.2 Switching Time Analysis

(6.1) (6.2) (6.3) 6.2 Switching Time Analysis Propagation delay time for Low-to-High case : for High-to-Low case : average propagation delay time : (6.1) (6.2) (6.3)

(6.4a) (6.4b) 6.2 Switching Time Analysis NMOS device (pull-down) (n-channel device saturation current : ) propagation delay time : & (Chapter 5) therefore (6.4a) (6.4b)

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(2.25) 2.5.2 Current Equations for Velocity-Saturated Devices Linear region operation (2.25)

2.5.2 Current Equations for Velocity-Saturated Devices Saturation region operation Limiting cases : ( ) ( ) (2.26) (2.27) (2.28) (2.29)

(6.5a) (6.5b) 6.2 Switching Time Analysis PMOS device (pull-down) (p-channel device saturation current : ) propagation delay time : therefore (6.5a) (6.5b)

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(6.6) 6.2 Switching Time Analysis refer to the example 6.1 (p.254) equvalent resistance for SPICE simulation sheet resistance : total resistance (6.6)

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6.2.1 Gate Sizing Revisited-Velocity Saturation Effects

5.2.3 Voltage Transfer Characteristics (VTC) of CMOS Gates

6.2.1 Gate Sizing Revisited-Velocity Saturation Effects

6.2.1 Gate Sizing Revisited-Velocity Saturation Effects

6.3 Detailed load capacitance calculation

6.3 Detailed Load Capacitance Calculation (6.7)

6.3.1 Fanout Gate Capacitance

2.8 Capacitances of the MOS Transistor

2.8.1 Thin-Oxide Capacitance

(2.34) 2.8.1 Thin-Oxide Capacitance Total capacitance of the thin-oxide : Trends : i) technology, oxide thickness ii) process, with iii) 0.13 process, with tox=22 ang. (2.34)

(6.8) (6.9) 6.3.1 Fanout Gate Capacitance Total fanout capacitance : Total input capacitance for 0.13 technology therefore, redefine (6.8) (6.9)

6.3.1 Fanout Gate Capacitance For an inverter total fanout capacitance : For NANDs, NORs, or other complex gates

6.3.2 Self-Capacitance Calculation

6.3.2 Self-Capacitance Calculation

(6.10) 6.3.2 Self-Capacitance Calculation Total self-capacitance of the inverter Effective capacitance per width (6.10)

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6.3.2 Self-Capacitance Calculation

(6.11) 6.3.2 Self-Capacitance Calculation Self-capacitance at the ouput node (6.11)

6.3.2 Self-Capacitance Calculation

6.3.3 Wire Capacitance Wire capacitance (6.12)

6.7 Summary Propagation delay : Driving resistance : Load capacitance : Input capacitance : Self-capacitance : Wire capacitance : Total delay :

6.4 Improving Delay calculation with input slope

6.4 Improving Delay Calculation with Input Slope (6.13)

6.4 Improving Delay Calculation with Input Slope

6.4 Improving Delay Calculation with Input Slope

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(6.14) 6.4 Improving Delay Calculation with Input Slope Total delay for ramp input (according to the example above) therefore (6.14)

6.4 Improving Delay Calculation with Input Slope (6.15)

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6.7 Summary Propagation delay : Driving resistance : Load capacitance : Input capacitance : Self-capacitance : Wire capacitance : Total delay :

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Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

6.5 Gate Sizing for optimal path delay

6.5.1 Optimal Delay Problem

6.5.1 Optimal Delay Problem

6.5.1 Optimal Delay Problem

6.5.2 Inverter Chain Delay Optimization – FO4 Delay Input capacitance of gate effective output resistance therefore, time constant (6.16) (6.17) (6.18)

6.5.2 Inverter Chain Delay Optimization – FO4 Delay

(6.19) (6.20) 6.5.2 Inverter Chain Delay Optimization – FO4 Delay Delay time ratio of self-capacitance to input capacitance (6.19) (6.20)

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6.5.2 Inverter Chain Delay Optimization – FO4 Delay

6.5.2 Inverter Chain Delay Optimization – FO4 Delay Total delay time delay term depend upon the size of inverter j

6.5.2 Inverter Chain Delay Optimization – FO4 Delay

6.5.2 Inverter Chain Delay Optimization – FO4 Delay Using Figure 6.22 Delay time (using ) gate : total : , (6.21) (6.22) (6.23)

6.5.2 Inverter Chain Delay Optimization – FO4 Delay

6.5.2 Inverter Chain Delay Optimization – FO4 Delay

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6.5.3 Optimizing Paths with NANDs and NORs

(6.24) 6.5.3 Optimizing Paths with NANDs and NORs Total delay for NAND chain for NOR chain Intrinsic time constants for NAND for NOR (6.24)

6.5.3 Optimizing Paths with NANDs and NORs

(6.25) 6.5.3 Optimizing Paths with NANDs and NORs Total delay Delay through stages j and j+1 (6.25)

(6.25) 6.5.3 Optimizing Paths with NANDs and NORs Delay through stages j+1 and j+2 (6.25)

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6.6 Optimizing paths with logical effort

(6.25) 6.6.1 Derivation of Logical Effort Total delay Delay equation ; fanout ; parastic term (6.25)

6.6.1 Derivation of Logical Effort

6.6.1 Derivation of Logical Effort

6.6.1 Derivation of Logical Effort Parameters - LE values

6.6.1 Derivation of Logical Effort Parameters - LE values (using capacitance ratios) (using equvalent resistances)

6.6.1 Derivation of Logical Effort

6.6.1 Derivation of Logical Effort Paramters - P values for NAND for NOR

6.6.1 Derivation of Logical Effort

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6.6.2 Understanding Logical Effort

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6.6.3 Branching Effort and Sideloads

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6.7 summary

6.7 Summary Propagation delay : Driving resistance : Load capacitance : Input capacitance : Self-capacitance : Wire capacitance : Total delay :

6.7 Summary Inverter delay equation : where , Intrinsic time constants

6.7 Summary Normalized delay equation : where LE(Logical Effort) for inverter, NAND2, and NOR2 Path effort

6.7 Summary Optimal stage effort : Gate sizing based on optimal stage effort Normalized delay :