Infineon CoolIR2DieTM Power Module September 2016 - Version 1 - Written by Elena Barbarini

Table of contents Glossary 1. Overview / Introduction 4 Executive Summary SiC devices market Reverse Costing Methodology 2. Company Profile 7 3. Physical Analysis 11 Synthesis of the Physical Analysis Physical Analysis Metodology 3.1 Package analysis 13 View and dimensions and marking Package Opening Package Cross-Section 3.2 IGBT Analysis 24 Dimension Details Cross-section 3.3 Diode Analysis 38 MOSFET C3M0120090D MOSFET C3M0065090D 4. Manufacturing Process Flow 45 Overview Mosfet Process Flow Mosfet Fabrication Units Package Process Flow 5. Cost Analysis 54 Synthesis of the Cost Analysis Main Steps of Economic Analysis Yields Explanation 5.1 Cost Analysis IGBT 58 MOSFET Wafer Cost Back-end Cost MOSFET Die cost 5.3 Cost Analysis Diode 64 Module Cost 5.3 Cost Analysis Module 70 6. Estimated Manufacturer Price Analysis 73 Manufacturers ratios Estimated manufacturer Price Contact

Executive Summary This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost and selling price of the CooliR²Die™ power module from Infineon. The device is an IGBT module for automotive applications integrated into different vehicles and based on the second generation Chevrolet Volt Traction Power Inverter Module (TPIM). The module integrates the latest packaging from International Rectifier, which is now part of Infineon, developed in the Delphi Viper project. Power module size and thermal dissipation are optimized thanks to the use of innovative materials including aluminum nitride (AlN) layers, directed bonded aluminum (DBA), and innovative gels and masks. This package has no wire bonding, reducing the inductance, and no printed circuit board (PCB), which simplifies module assembly. Two DBA layers improve thermal management by allowing heat to flow out of two sides of the die. The new position of the die in the package also enhances thermal dissipation. Integrating a single IGBT and diode on a minimal footprint provides system design flexibility and lower overall cost. This report analyses the module structure and packaging of the IGBT and diode dies in detail. Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, IGBT and diode.

CooliR²™ technology IR/Infineon website

Module Overview Module Overview Cu Connectors Module Overview

Module Opening Lower DBA Plastic protection Connectors IGBT emplacement Upper DBA Solder mask Diode emplacement Module: Optical view

Module Cross-Section IGBT die : 180µm Details of module: Cross-Section optical view Details of module: Cross-Section optical view

PGDW: Potential Good Dies per Wafer IGBT View & Dimensions xx mm xx mm IGBT Die Area: XXX mm² (XX mm x XX mm) Nb of PGDW per 8-inch wafer: XXX IGBT Die Overview PGDW: Potential Good Dies per Wafer

IGBT after Al etch – SEM View IGBT after Al etch – SEM View Die Process Die Overview IGBT after Al etch – SEM View Transistor pitch: xxx µm IGBT after Al etch – SEM View

Gate : Cross-Section SEM view

Die Cross-Section – Optical View Die Cross-Section – SEM View Diode Cross-Section Die Cross-Section – Optical View Die Cross-Section – SEM View

Global Overview Diode IGBT CoolIR Power Module IGBT manufacturing 1 metal layer, trench, backside Probe test Dicing Diode manufacturing 1 metal layer, backside Probe test Dicing Assembly in package Final test Diode IGBT CoolIR Power Module

IGBT Process Flow – Back side Si wafer Backgrinding N fieldstop implantation P collector implantation Si Wafer Al/Ti/Ni-Ag deposition Backgrinding and CMP on the backside The backside steps are performed before the polyimide deposition Backgrinding and CMP on the backside Metal deposition on the backside : - Ohmic contact in aluminum. - A thin Ti layer to stop the metal diffusion - A Ni-Ag layer in order to protect the back side from the corrosion and enhance the solder

IGBT Wafer Fabrication Unit We consider Infineon as supplier of IGBT. Infineon wafer fab units (Extracted from PowerPrice+)

IGBT Unprobed Wafer Cost

IGBT Die Cost

Diode Die Cost

Module Cost The assembled module cost is estimated between $xx and $xx. The dies cost (Silicon cost) accounts for about xxx%. The DBA substrates cost accounts for xx% of the cost. The added value cost is $xxxx (10%).

Estimated Manufacturer Price

Contact Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates completed by industry experts. Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the manufacturing cost (if all parameters are cumulated) These results are open for discussion. We can reevaluate this circuit with your information. Please contact us: