1. Figure 11.1 (p. 260) Trends of power supply voltage V DD, threshold voltage V T, and gate oxide thickness d versus channel length for CMOS logic technologies. Points are collected from data published over recent years.

2. Figure 11.2 (p. 260) Challenges for 180-nm and smaller MOSFETs.

3. Figure 11.3 (p. 263) System-on-a-chip of a conventional personal computer motherboard.

4. Figure 11.4 (p. 263) Schematic cross section of the embedded DRAM including DRAM cells and logic MOSFETs. There is no height difference in the trench capacitor cell because of the DRAM cell structure. M1 to M5 are metal interconnections, and V1 to V4 are via holes.