Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

250 o C Anneal Test Summary

3 Brief Review of Fabrication Process EBL – FinEBL – Ni Source Fabrication Process Results Anneal TempFin WidthTime Sequence 250’C 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm,100nm, 150nm, 200nm, 300nm, 500nm 5min, 10min, 20min, 40min, 60min, 90min, 120min 275’C 3min, 6min, 12min, 20min, 30min, 40min 300’C 2min, 4min, 6min, 8min, 10min, 15min Time & Temperature Test

Fin Width Dependence 4

Possible Reason for the discontinuity Possible Reason 1: Separate SEM images Measurement from 2 separate SEM images Measurement from single SEM image 5

Possible Reason 2: plotted with the average fin width 6

Possible Reason 3: contacts of Ni with InGaAs vary from sample to sample Previous Test with 30nm Fin [110] 250’C 300’C One good sample 300’C 30nm Fin 300’C 5min 7

Possible Reason 4: modeling Previous DesignNew Design 8

Under steady state condition, F 1 =F 2 =F 3 =F Nickelide growth rate limit: Volume diffusion limit: Surface diffusion limit: Nickelide source supply limit: 9

Time Dependence 10

11

12 1.Ni-InGaAs Diffusion Study -- Process new set of samples -- Measure the diffusion length inside SEM -- Start to transfer samples onto TEM grids 2.Neural Probe Samples -- Photomask is under fabrication -- Ni dots writing for pillar etching to test PMMA spin-coating Plan