Stress Tunable NCL (Nano-Composite Layer) by Remote-Plasma ALD and Radical-Assisted MLD Films for Nano-Scaled Devices Changwan Hwang, Sukyal Cha, Jungyup Kim, Sang In Lee Veeco ALD, 3191 Laurelview Court, Fremont, CA 94538, USA * Experimental Results Discussion Conclusion Introduction References  Al 2 O 3, TiO 2, SiO 2, SiOCH  ALD films with CP (Close Proximity) plasma  Temperature: 80  C  Scan speed: 100mm/s ~ 350mm/s  Diol-based Alucone  Radical generation from CP-plasma  Same temperature w/ ALD films to deliver multi-stacked structures for tuning the stress of the stacks  TEM micrographs of NCL 10:2 shows  O* radical from the remote plasma delivers provide layer-by-layer deposition  Well structured film having smooth surface  Nano-Composite Layer (NCL) stack consists of alternating layers with remote-plasma ALD films and radical-assisted MLD films was developed at 80°C  Very conformal ALD SiO 2 was obtained without pattern loading effect which is applicable to multiple patterning process for the semiconductor application.  Stresses in inorganic ALD layer can be offset by either carbon-incorporated dielectrics (CID) interlayers or polymeric MLD interlayers. -Combinations of Al 2 O 3 with CID interlayers or MLD interlayers can be used to control the stress of the stacks from tensile to compressive state and vice versa -NCL 4:2 & 1:1 are below 100MPa and free standing films can be obtained by changing the thickness and atomic content of the ALD layer or materials. Substrate CP-plasma Al 2 O 3 CP-plasma SiO 2 /SiOCH CP-plasma Alucone  Temperature: 80°C  Working pressure: 500mTorr  CP-Plasma: 20mm from the substrate  Substrate moving speed: 100~350mm/s  12” Si wafer  150μm PEN film  KBr pellet GPC/RI  Spectroscopic ellipsometry: M-2000 (J.A. Woollam Co.)  Auger: Film composition, impurity  Raman: Film stress  FT-IR: C=C, -H bond  TEM: Film structure & Step-coverage FAST-ALD Module Array ALD module (#1) ALD module (#2) MLD module (#3) 1.Changwan Hwang, et al., “Low Temperature Remote Plasma Spatial ALD (FAST ‐ ALD TM ) Process for Al ‐ Based Dielectrics”, AVS Topical Conference on Atomic Layer Deposition (ALD2014); Kyoto Japan, June 15-18, Changwan Hwang, et al., “A Novel Remote Plasma Assisted Spatial MLD Process for Flexible Applications: Fast Array Scanning Technology (FAST-MLD)”, AVS Topical Conference on Atomic Layer Deposition (ALD2014); Kyoto Japan, June 15-18, 2014 Remote-plasma ALD 1 Radical-assisted MLD 2 Oxide 1NCL 10:2NCL 4:2NCL 1:1NCL 1:2 Film structure Oxide 1 : Interlayer ratio 100% : 0%87% : 13%73% : 27%67% : 33%40% : 60% Total Thickness ( Å ) Å Å Å Å Å n Stress (MPa) Oxide 1 Interlayer 28.3nm Compressive stress: ~30MPa *Reference: PECVD film <100ºC −100 ~ −300MPa Compressive stress: ~30MPa *Reference: PECVD film <100ºC −100 ~ −300MPa Epoxy {10 × Oxide(I) + 2 × Interlayers } n Silicon Epoxy Silicon 10nm {10 × Oxide(I) + 2 × Interlayers } n SiO 2 Silicon SiO 2 Epoxy  Conformality of FAST-ALD TM SiO 2 film deposited at 80  C -100% step coverage: Sidewall & Bottom -No pattern loading effects  Smooth surface w/ very mild stress  Reduced stress in the sandwich structures with a MLD layer insert Film Analysis  Possible layers of NCL stack  SiO 2 /CID, TiO 2 /CID, Al 2 O 3 /CID/TiO 2 /…, etc  Al 2 O 3 /MLD, SiO 2 /MLD, TiO 2 /MLD, Al 2 O 3 /MLD/TiO 2 /…, etc