1. The Thermal Annealing Effect on The Residual Stress and Mechanical Property in The Compressive stressed DLC Film
H. W. Choi, M. -W. Moon, T. -Y. Kim2, K. -R. Lee2, K. H. Oh
1. Materials Science and Engineering, Seoul National University
2. Future Technology Research Division, Korea Institute of Science and Technology
Introduction
Experimental condition
Purpose of this work
Deposition
Annealing
Intrinsic compressive stress of DLC
- Prevent the growth of thick films
- Cause a buckling and delamination
Temperature
Rapid Thermal Processing : °C
R.F.PACVD
+ CH4 2min
One of method to reduce residual stress, we studied thermal
annealing effect and thermal cyclic annealing.
We revealed the relation between the Thermal annealing
and residual stress with mechanical properties change
and interface adhesion of DLC films. +
Thermal cycling annealing
Tem.: 200, 300°C
Time : 10, 60 min
(Holding time)
Si 500 μm
Ar cleaning 1 min
a-c:H 1400Å
Time
Delamination of DLC
1 min
10 min
1 min
Stress reduction by cycling annealing
Raman spectroscopy
Experimental Results
(a) as-deposited
(b) 600 ° C
Stress reduction by annealing
Conclusion
Adhesion reduction
Evolution of delamination
As increasing annealing temperature,
• sp2 bond were progressively increased with D band to
a higher and G band shift to a lower wave number.
• Stress reduction were observed with adhesion deterioration
until 500°C while maintained its mechanical properties.
By Thermal cyclic annealing,
• A Stress reached its minimum value within 1cycling or 2hour
• A higher and shortest holding annealing temperature is more
effective than lower and longest holding annealing temperature.