RF and A/MS Technologies for Wireless Communications Working Group 2 April 2003 - Work In Progress – Not for Publication 1 PIDS ITWG RF and A/MS Technologies.

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Presentation transcript:

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 1 PIDS ITWG RF and A/MS Technologies for Wireless Communications Working Group Scope of the New Group WG Status & Organization Working Strategy Links to other TWGs

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 2 PIDS RF and A/MS Technologies for Wireless Communications WG Scope of the New Group PIDS 2002: (Process, Integration, Devices & Structures) Memory & Logic Analog/Mixed-Signal Devices Reliability Emerging Research Devices Addition of a new technology driver based on RF and A/MS Technologies for Wireless Communications: includes - PAs & Power Management - RF Transceivers - Analog & Mixed Signal - mm-Wave

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 3 PIDS RF and A/MS Technologies for Wireless Communications WG Scope of the New Group From D. Barlas, et. al., Microw. Journal, June 1999, p. 22 Commercial applications & available spectrum are RF semiconductor technology drivers What will be the future technology options?

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 4 PIDS RF and A/MS Technologies for Wireless Communications WG Scope of the New Group AA- filter ADC AGC LNA digital part N f ref VCO DAC PA Circuit functions of a typical mobile communication system

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 5 PIDS RF and A/MS Technologies for Wireless Communications WG Focus on technologies serving wireless market (Cell phones, WLAN, UWB commun., TV tuners, automotive radar,..) Include as potential solutions: - Technologies: Si CMOS, SiGe HBT, Si LDMOS, GaAs, InP, SiC, GaN - Device structures: MOSFET, MESFET, HEMT, HBT, LDMOS - Other technologies (MEMS, BAW, Passives,..) Tasks for 2003: - Recruit group members - Develop WG organization, schedule & meetings - Develop technology requirement tables - Develop potential solutions tables - Develop text - Develop multi-year strategy - Introduce Compound Semiconductors into ITRS Scope of the New Group

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 6 PIDS RF and A/MS Technologies for Wireless Communications WG WG is up (16 members) Chair: Margaret Huang, Motorola Co-Chairs: Bin Zhao, Skyworks Jan-Erik Mueller, Infineon Editorial:Herbert Bennet, NIST Sub-Group (1):PAs & Power Management Julio Costa, RFMD (L) Ding Day, Skyworks Ali Hajimiri, Caltech Dave Halchin, RFMD Jan-Erik Mueller, Infineon Sam Shichijo, Texas Instruments Chuck Weitzel, Motorola WG Status & Organization

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 7 PIDS RF and A/MS Technologies for Wireless Communications WG Sub-Group (2):RF Transceivers Marco Racanelli, Jazz (L) Peter Cottrell, IBM Ali Niknejad, UC Berkeley Sam Shichijo, Texas Instruments Sub-Group (3):Analog & Mixed Signal Ralf Brederlow, Infineon (L) Margaret Huang, Motorola Tony Immorlica, BAE Systems Sam Shichijo, Texas Instruments Bin Zhoa, Skyworks Sub-Group (4):Millimeter Wave Tony Immorlica, BAE Systems (L) Bill Stanchina, HRL Ali Niknejad, UC Berkeley Ali Hajimiri, Caltech WG Status & Organization

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 8 PIDS RF and A/MS Technologies for Wireless Communications WG Each Sub-Group generates own table Based on application spectrum divided in 3 bands (1) GHz (PA, RF Transc., A/MS) (2) GHz (3) GHz (mm-Wave) ( GHz after completion of the other two bands) Tables include candidate technologies Si CMOS, SiGe HBT, Si LDMOS, GaAs, InP, SiC, GaN and Device structures MOSFET, MESFET, HEMT, HBT, LDMOS Write a chapter of PIDS comparable in size and content to the ERD chapter in 2001 Working Strategy

RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 9 PIDS RF and A/MS Technologies for Wireless Communications WG PIDs Overall Reliability Emerging Research Devices Design Overall SoC systems Assembly & Packaging Test Front End Processes Others? Links to other TWGs