Field Effect Transistors Topics Covered in Chapter : JFETs and Their Characteristics 30-2: Biasing Techniques for JFETs 30-3: JFET Amplifiers 30-4: MOSFETs and Their Characteristics 30-5: MOSFET Biasing Techniques 30-6: Handling MOSFETs Chapter 30 © 2007 The McGraw-Hill Companies, Inc. All rights reserved.
30-1: JFETs and Their Characteristics Fig (a) in the next slide, shows the construction of an n-channel JFET. There are four leads: the drain, source, and two gates. The area between the source and drain terminals is called the channel. Because n-type semiconductor material is used for the channel, the device is called an n-channel JFET. Embedded on each side of the n-channel are two smaller p-type regions called gates. McGraw-Hill© 2007 The McGraw-Hill Companies, Inc. All rights reserved.
30-1: JFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig JFET N-Channel P-Channel
30-1: JFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (a) Fig (b) Fig (a) is the schematic symbol for the n-channel JFET, and Fig (b) shows the symbol for the p-channel JFET. The only difference is the direction of the arrow on the gate lead.
30-1: JFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig Fig illustrates the current flow in an n-channel JFET with p- type gates disconnected. The amount of current depends upon two factors: The value of the drain- source voltage, V DS The drain-source resistance, designated r DS
30-1: JFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig The gate regions in a JFET are embedded on each side of the channel to help control the amount of current flow in the channel. Fig (a) shows an n-channel JFET with both gates shorted to the source. Fig (b) shows how an n-channel JFET is normally biased.
30-1: JFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (a) (c) Fig (a) shows an n-channel JFET connected to the proper biasing voltages. The drain is positive and the gate is negative, creating the depletion layers. Fig (c) shows a complete set of drain curves for the JFET in Fig (a).
30-2: Biasing Techniques for JFETs Many techniques can be used to bias JFETs. In all cases, the gate-source junction is reverse- biased. The most common biasing techniques are Gate Self Voltage-divider Current-source
30-2: Biasing Techniques for JFETs Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig Fig (a) shows an example of gate bias. Fig (b) shows how an ac signal is coupled to the gate of a JFET. If R G were omitted, as shown in (c), no ac signal would appear at the gate because V GG is at ground for ac signals.
30-2: Biasing Techniques for JFETs Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig One of the most common ways to bias a JFET is with self-bias. (See Fig a) Only a single power supply is used, the drain supply voltage, V DD.
30-2: Biasing Techniques for JFETs Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig Fig shows a JFET with voltage-divider bias. Since the gate-source junction has extremely high resistance, the R 1 – R 2 voltage divider is practically unloaded. Voltage-divider bias is more stable than either gate or self-bias.
30-2: Biasing Techniques for JFETs Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig Fig shows one of the best ways to bias JFETs, called current- source bias. The npn transistor with emitter bias acts like a current source for the JFET. The drain current, I D, equals the collector current, I C, which is independent of the value of V GS.
30-3: JFET Amplifiers JFETs are commonly used to amplify small ac signals. One reason for using a JFET instead of a bipolar transistor is that very high input impedance, Z in, can be obtained. A big disadvantage, however, is that the voltage gain, A V, obtainable with a JFET is much smaller. JFET amplifier configurations are as follows: Common-source (CS) Common-gate (CG) Common-drain (CD)
30-3: JFET Amplifiers Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (a) Fig (a) shows a common-source amplifier. For a common-source amplifier, the input voltage is applied to the gate and the output is taken at the drain.
30-3: JFET Amplifiers Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (b) The ac equivalent circuit is shown in Fig (b) On the input side, R G = Z in, which is 1 MΩ. This occurs because with practically zero gate current, the gate-source resistance, designated R GS, approaches infinity.
30-3: JFET Amplifiers Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (a) Fig (a) shows a common-drain amplifier, usually referred to as a source follower. A source follower has a high input impedance, low output impedance, and a voltage gain of less than one, or unity.
30-3: JFET Amplifiers Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (a) A common-gate amplifier has a moderate voltage gain. Its big drawback is that Z in is quite low. Fig (a) shows a CG amplifier.
30-4: MOSFETs and Their Characteristics The metal-oxide semiconductor field effect transistor has a gate, source, and drain just like the JFET. The drain current in a MOSFET is controlled by the gate-source voltage V GS. There are two basic types of MOSFETS: the enhancement-type and the depletion-type. The enhancement-type MOSFET is usually referred to as an E-MOSFET, and the depletion-type, a D- MOSFET. The MOSFET is also referred to as an IGFET because the gate is insulated from the channel.
30-4: MOSFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig Fig (a) shows the construction of an n-channel depletion-type MOSFET, and Fig (b) shows the schematic symbol.
30-4: MOSFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig Fig shows the construction and schematic symbol for a p- channel, depletion-type MOSFET. Fig (a) shows that the channel is made of p-type semiconductor material and the substrate is made of n-type semiconductor material. Fig (b) shows the schematic symbol.
30-4: MOSFETs and Their Characteristics Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (a) Fig (a) shows the construction of an n-channel, enhancement-type MOSFET. The p-type substrate makes contact with the SiO 2 insulator. Because of this, there is no channel for conduction between the drain and source terminals.
30-5: MOSFET Biasing Techniques Zero-bias can be used only with depletion-type MOSFETs. Even though zero bias is the most commonly used technique for biasing depletion-type MOSFETs, other techniques can also be used. Biasing techniques include Self Voltage-divider Current-source Drain-feedback bias is often used to bias E-MOSFETs
30-5: MOSFET Biasing Techniques Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig (a) Fig (a) shows a popular biasing technique that can be used only with depletion-type MOSFETs. This form of bias is called zero bias because the potential difference between the gate-source region is zero.
30-6: Handling MOSFETs One disadvantage of MOSFET devices is their extreme sensitivity to electrostatic discharge (ESD) due to their insulated gate-source regions. The SiO 2 insulating layer is extremely thin and can be easily punctured by an electrostatic discharge. The following is a list of MOSFET handling precautions Never insert or remove MOSFETs from a circuit with the power on.
30-6: Handling MOSFETs MOSFET handling precautions (Continued) Never apply input signals when the dc power supply is off. Wear a grounding strap on your wrist when handling MOSFET devices. When storing MOSFETs, keep the device leads in contact with conductive foam, or connect a shorting ring around the leads.