1. 09/16/2010© 2010 NTUST Today Course overview and information

2. The BJT is a transistor with three regions and two pn junctions. The regions are named the emitter, the base, and the collector and each is connected to a lead. There are two types of BJTs – npn and pnp. n n p p p n E (Emitter) B (Base) C (Collector) E B C Separating the regions are two junctions. Base-Collector junction Base-Emitter junction Bipolar Junction Transistor (BJT)

3. BJT

5. For normal operation, the base-emitter junction is forward- biased and the base collector junction is reverse-biased. npn BE forward- biased BC reverse- biased For the npn transistor, this condition requires that the base is more positive than the emitter and the collector is more positive than the base. + + For the pnp transistor, this condition requires that the base is more negative than the emitter and the collector is more negative than the base. pnp + + BJT Biasing

6. Transistor Biasing

7. A small base current (I B ) is able to control a larger collector current (I C ). Some important current relationships for a BJT are: I I I IBIB IEIE ICIC BJT Currents

8. Transistor Currents

9. Transistor Voltages

10. Because the base current is small, the approximation is useful for calculating the base voltage. R1R1 R2R2 RCRC RERE VBVB VEVE After calculating V B, you can find V E by subtracting 0.7 V for V BE. Next, calculate I E by applying Ohm’s law to R E : Then apply the approximation Finally, you can find the collector voltage from VCVC Voltage-divider Bias

12. Calculate V B, V E, and V C for the circuit. R1R1 R2R2 RCRC RERE V E = V B  0.7 V = 27 k  6.8 k  1.0 k  2.2 k  +15 V 2N3904 3.02 V 2.32 V 9.90 V Voltage-divider Bias

13. Examples

14. Amplifier

15. Collector Characteristic Curves

18. The collector characteristic curves are a family of curves that show how collector current varies with the collector-emitter voltage for a given I B. ICIC V CE 0 I B6 I B5 I B4 I B3 I B2 I B1 I B = 0 The saturation region occurs when the base- emitter and the base- collector junctions are both forward biased. The curves are divided into three regions: active region The active region is after the saturation region. This is the region for operation of class-A operation. breakdown region The breakdown region is after the active region and is is characterized by rapid increase in collector current. Operation in this region may destroy the transistor. Collector Characteristic Curves

19. Amplifier

20. A load line is an IV curve that represents the response of a circuit that is external to a specified load. For example, the load line for the Thevenin circuit can be found by calculating the two end points: the current with a shorted load, and the output voltage with no load. +12 V 2.0 k  0 0 4812 2 4 6 I (mA) V (V) I SL = 6.0 mA V SL = 0 V I NL = 0 mA V NL = 12 V Load line Load Lines

21. The IV response for any load will intersect the load line and enables you to read the load current and load voltage directly from the graph. +12 V 2.0 k  0 0 4812 2 4 6 I (mA) V (V) Read the load current and load voltage from the graph if a 3.0 k  resistor is the load. 3.0 k  R L = IV curve for 3.0 k  resistor V L = 7.2 VI L = 2.4 mA Q-point Load Lines

22. The load line concept can be extended to a transistor circuit. For example, if the transistor is connected as a load, the transistor characteristic +12 V 2.0 k  0 0 4812 2 4 6 I (mA) V (V) curve and the base current establish the Q-point. Load Lines

23. Load lines can illustrate the operating conditions for a transistor circuit. 0 0 4812 2 4 6 I (mA) V (V) If you add a transistor load to the last circuit, the base current will establish the Q-point. Assume the base current is represented by the blue line. +12 V 2.0 k  For this base current, the Q-point is: Assume the IV curves are as shown: The load voltage (V CE ) and current (I C ) can be read from the graph. Load Lines

24. For the transistor, assume the base current is established at 10  A by the bias circuit. Show the Q- point and read the value of V CE and I C. 0 0 4812 2 4 6 I C (mA) V CE (V) +12 V 2.0 k  Bias circuit I B = 5.0  A I B = 10  A I B = 15  A I B = 20  A I B = 25  A The Q-point is the intersection of the load line with the 10  A base current. V CE = 7.0 V; I C = 2.4 mA Load Lines

25. When a signal is applied to a transistor circuit, the output can have a larger amplitude because the small base current controls a larger collector current. 0 0 4812 2 4 6 I C (mA) V CE (V) I B = 5.0  A I B = 10  A I B = 15  A I B = 20  A I B = 25  A For the load line and characteristic curves from the last example (Q-point shown) assume I B varies between 5.0  A and 15  A due to the input signal. What is the change in the collector current? Reading the collector current, I C varies from 1.2 mA to 3.8 mA. The operation along the load line is shown in red. Signal Operation

27. The BJT as a switch BJTs are used in switching applications when it is necessary to provide current drive to a load. In cutoff, the input voltage is too small to forward-bias the transistor. The output (collector) voltage will be equal to V CC. In switching applications, the transistor is either in cutoff or in saturation. RCRC V CC RCRC V OUT I IN = 0 = V CC I IN > I C(sat) /  DC = 0 V When I IN is sufficient to saturate the transistor, the transistor acts like a closed switch. The output is near 0 V. BJT as a Switch

28. Examples

30. The field-effect transistor (FET) is a voltage controlled device where gate voltage controls drain current. There are two types of FETs – the JFET and the MOSFET. JFETs have a conductive channel with a source and drain connection on the ends. Channel current is controlled by the gate voltage. p n S (Source) G (Gate) D (Drain) S G D n n pp The gate is always operated with reverse bias on the pn junction formed between the gate and the channel. As the reverse bias is increased, the channel current decreases. n-channel JFET p-channel JFET The FET

31. The MOSFET differs from the JFET in that it has an insulated gate instead of a pn junction between the gate and channel. Like JFETs, MOSFETs have a conductive channel with the source and drain connections on it. p S (Source) G (Gate) D (Drain) S G D n n p p-channel MOSFET n-channel MOSFET Channel Substrate Channel current is controlled by the gate voltage. The required gate voltage depends on the type of MOSFET. The FET

32. Bipolar junction transistor (BJT) Class A amplifier Saturation An amplifier that conducts for the entire input cycle and produces an output signal that is a replica of the input signal in terms of its waveshape. A transistor with three doped semiconductor regions separated by two pn junctions. The state of a transistor in which the output current is maximum and further increases of the input variable have no effect on the output. Selected Key Terms

33. Cutoff Q-point Amplification Common-emitter (CE) Class B amplifier The dc operating (bias) point of an amplifier. A BJT amplifier configuration in which the emitter is the common terminal. The non-conducting state of a transistor. An amplifier that conducts for half the input cycle. The process of producing a larger voltage, current or power using a smaller input signal as a pattern. Selected Key Terms

34. Junction field- effect transistor (JFET) MOSFET Depletion mode Enhancement mode Metal-oxide semiconductor field-effect transistor. A type of FET that operates with a reverse- biased junction to control current in a channel. The condition in a FET when the channel is depleted of majority carriers. The condition in a FET when the channel has an abundance of majority carriers. Selected Key Terms

35. Common-source Oscillator Feedback A circuit that produces a repetitive waveform on its output with only a dc supply voltage as an input. An FET amplifier configuration in which the source is the common terminal. The process of returning a portion of a circuit’s output signal to the input in such a way as to create certain specified operating conditions. Selected Key Terms

36. 1. The Thevenin circuit shown has a load line that crosses the y-axis at a. +10 V. b. +5 V. c. 2 mA. d. the origin. +10 V 5.0 k  Quiz

37. 2. In a common-emitter amplifier, the output ac signal will normally a.have greater voltage than the input. b.have greater power than the input. c.be inverted. d.all of the above. Quiz

38. 3. In a common-collector amplifier, the output ac signal will normally a.have greater voltage than the input. b.have greater power than the input. c.be inverted. d.have all of the above. Quiz

39. 4. The type of amplifier shown is a a. common-collector. b. common-emitter. c. common-drain. d. none of the above. R1R1 R2R2 RERE C1C1 VCCVCC Quiz

40. 5. A major advantage of FET amplifiers over BJT amplifiers is that generally they have a. higher gain. b. greater linearity. c. higher input resistance. d. all of the above. Quiz

41. 6. A type of field effect transistor that can operate in either depletion or enhancement mode is an a. D-MOSFET. b. E-MOSFET. c. JFET. d. none of the above. Quiz

42. 7. For an FET, transconductance is the ratio of a. drain voltage to drain current. b. gate-source voltage to drain current. c. gate-source current to drain voltage. d. drain current to gate-source voltage. Quiz

43. 8. A transistor circuit shown is a a. D-MOSFET with voltage-divider bias. b. E-MOSFET with voltage-divider bias. c. D-MOSFETwith self-bias. d. E-MOSFET with self bias. RDRD +V DD R1R1 R2R2 Quiz

44. 9. A Colpitts or Hartley oscillator both have a. positive feedback. b. amplification. c. a closed loop gain of 1. d. all of the above. Quiz

45. 10. If you were troubleshooting the circuit shown here, you would expect the gate voltage to be a. more positive than the drain voltage. b. more positive than the source voltage. c. equal to zero volts. d. equal to +V DD RDRD +V DD R1R1 R2R2 Quiz

46. Answers: 1. c 2. d 3. b 4. a 5. c 6. a 7. d 8. b 9. d 10. b Quiz