Film Deposition in IC Fabrication

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Presentation transcript:

Film Deposition in IC Fabrication Metal Contacts/Connections Electrodes Masks Wire insulation Device encapsulation Low stress Adherent Uniformity, no pin holes Conformal step coverage Thermal & electrical stability

Vapor pressure of metals

Voltage ratio in RF sputtering: VC/VA = (AA/AC)n Sputter Deposition Systems RF Sputter System Voltage ratio in RF sputtering: VC/VA = (AA/AC)n E DC Sputter Deposition Magnetron Sputter Deposition

Chemical Vapor Deposition (CVD) Plasma-enhanced CVD (PECVD) Low-pressure CVD (LPCVD)

Different thin film textures Single crystal Poly-crystalline Poly-crystalline columnar Nano-crystalline amorphous

Step Coverage of Deposited Films High surface mobility + non-directional flux  conformal step coverage

Electromigration Effects Void Pile-up Bamboo-structured wire Electromigration-resistant Electron wind and field-driven atomic migration

SiO2 Films for masking & protection SiH4 + O2  SiO2 + 2H2 or SiH4 + N2O SiO2 + 2N2 + 2H2 by APCVD or LPCVD at ~ 450ºC, SiH4 diluted in H2 with Si(C2H5O)4 (TEOS), more stable to handle Si(C2H5O)4 + 12O2  SiO2 + 8CO2 + 10H2O, APCVD or LPCVD at ~ 700ºC SiO2 films by PECVD at 300-350ºC, low compressive stress. Applications of deposited SiO2 films: Field oxide for MOS and HV devices (deposited on thermal SiO2) Fill-in of the isolation walls/wells Isolation between multi-layer metal connections Diffusion and implantation masks Final encapsulation layer

Other Films for masking & protection Phosphosilicate glass (PSG) adding P2O5 to improve the quality of SiO2 mixing PH3 or (CH3O)3P in oxidation gases 2PH3 + 4O2  P2O5 + 3H2O or 2(CH3O)3P + 10O2  P2O5 + 6CO2 + 10H2O Effect of P2O5: reduce tensile stress in SiO2 (to 0 at ~ 20% P2O5) TCE() matching with substrate (P2O5 raises ) improve film texture (denser, void-free) effective diffusion barrier to Na Si3N4 (and SiOxNy) more stable than SiO2, excellent barrier to Na, B and Ga migration, mask for oxidation 3SiH4 + 4NH3  Si3N4 + 12H2 (PNH3 : PSiH4 ~ 150) LPCVD at ~900ºC, high tensile stress, t < 1000Å PECVD at ~300ºC, low stress, high H incorporation RF sputtering of Si in N2 discharge: 3Si + 4N  Si3N4

High solubility of Si in Al (~1%) Pit Formation of Al Contact with Si High solubility of Si in Al (~1%) Al spikes

Silicide Contacts Resistivity of metal 5.8 10.5 10.4 13 43 13 20 5.3 42 13 5.3 14.5 7 Resistivity of metal

Phase Diagram and Formation Sequence of Silicide Oxidation of Silicide