1200V GEN8 IGBT Family IR has introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology delivered in industry standard TO-247 packages to offer best-in-class performance for industrial and energy saving applications. PRODUCT FAMILY PAGE PRESS RELEASE HI-RES GRAPHIC Advantages The novel Gen8 devices are available with current ratings from 8A up to 60A with a typical VCE(on) of 1.7V and a short-circuit rating of 10µs to reduce power dissipation resulting in increased power density and superior robustness. The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI and over-voltage increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs. The thin wafter technology delivers improved thermal resistance and maximum junction temperature up to 175ºC. Features Benchmark Low VCE(on) 10µS Short Circuit SOA Positive VCE(on) Temperature Coefficient Square RBSOA and High ILM rating Lead-Free, RoHS Compliant November 2014