Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.

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Presentation transcript:

Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential

Fab – Step 2 Grow thermal oxide Top view Side view Si substrate SiO2 – 2 um Si confidential

Fab – Step 3 Dry etch thermal oxide from the front of the wafer Top view Side view Si substrate SiO2 – 2 um Si confidential

Fab – Step 4 Deposit AlN Top view Side view AlN Si substrate SiO2 – 2 um Si confidential

Fab – Step 5 Etch AlN to define the structure – Mask 1 Top view Side view AlN Si substrate SiO2 – 2 um Si confidential

Fab – Step 6 Deposit Pt Top view Side view Pt Si substrate SiO2 – 2 um Si confidential

Fab – Step 7 Etch Pt – Mask 2 Top view Side view + Q - Q +/- Q Si substrate SiO2 – 2 um Si confidential

Fab – Step 8 Etch Si to define the structure – Mask 3 Top view Side view + Q - Q +/- Q Si substrate SiO2 – 2 um Si confidential

Fab – Step 9 Etch buried oxide to define the structure – Mask 3 Top view Side view + Q - Q +/- Q Si substrate SiO2 – 2 um Si confidential

Fab – Step 10 Spin coat protective photoresist and bake it Top view Side view Photoresist + Q - Q +/- Q Si substrate SiO2 – 2 um Si confidential

Fab – Step 11 Pattern back oxide to be used as hard mask for back side etch – Mask 4 Top view Side view + Q - Q +/- Q Photoresist Si substrate SiO2 – 2 um Si confidential

Fab – Step 12 Back side etch of Si – Mask 4 Top view Side view + Q - Q +/- Q Photoresist Si substrate SiO2 – 2 um Si confidential

Fab – Step 13 Strip photoresist Top view Side view + Q - Q +/- Q Anchor Si substrate SiO2 – 2 um Si confidential