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1 Revamping Electronic Design Process to Embrace Interconnect Dominance Chung-Kuan Cheng CSE Department UC San Diego La Jolla, CA 92093-0404

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Presentation on theme: "1 Revamping Electronic Design Process to Embrace Interconnect Dominance Chung-Kuan Cheng CSE Department UC San Diego La Jolla, CA 92093-0404"— Presentation transcript:

1 1 Revamping Electronic Design Process to Embrace Interconnect Dominance Chung-Kuan Cheng CSE Department UC San Diego La Jolla, CA 92093-0404 ckcheng@ucsd.edu

2 2 Interconnect Dominance Goals: Speed, Power, Cost Constraints: Area, Current, Skew Challenges: PVT Variations, Signal Integrity

3 3 Outlines Interconnect Technologies Buffers, Pitches, Circuit Styles Geometrical Planning Wire Orientations, Chip Shapes Interconnect Networks Topologies, Wire Styles Power and Clock Distributions Functional Modules Adders, Shifters Conclusion

4 4 Interconnect Technologies RC Wires Wire Pitch, Width, Separation Buffer Size, Buffer Interval Transmission Line RLCG

5 5 Interconnect Technologies Coupling capacitance: Self capacitance: Total wire capacitance:

6 6 Interconnect Technologies Year (On-Chip)200520102015 r n c n (ps) T40 0.8700.4000.180 r w c w (ps/mm) T80 metal 1 44017925951 interval (um)13645.716.8 delay (ps/um)0.1200.1640.200 SRC Roadmap 2005

7 7 Interconnect Technologies Design metrics: Objective functions: For each pitch, For each objective function Find wire width w, buffer size s inv and buffer interval l inv Calculate the metrics

8 8 Experimental Results – normalized delay Top left: Overview Top right: at different pitches (solid lines: min-pitch; dash lines: saturating pitch) Bottom right: at 70nm technology

9 9 Interconnect Tech. -- bandwidth Top left: Overview Top right: at min-pitches Bottom right: at 70nm technology

10 10 Interconnect Tech. – bandwidth/power Top left: Overview Top right: at different pitches (solid lines: min-pitch; dash lines: optimal pitch) Bottom right: at 70nm technology

11 11 Interconnect Tech.: Transmission Line Speed-of-the-light on-chip communication < 1/5 Delay of Traditional Wires Low Power Consumption < 1/5 Power Consumption Robust against process variations Short Latency Insensitive to Feature Size

12 12 Interconnect Tech.: Transmission Line Differential Transmission LineSurfliner Serial resistance causes voltage loss. Speed and attenuation are frequency dependent. Shunt conductance compensates voltage loss: R/G = L/C. Flat from DC Mode to Giga Hz Telegraph Cable: O. Heaviside in 1887.

13 13 Theory (Telegrapher’s Equation) Telegrapher’s equation: Propagation Constant: Wave Propagation: Alpha and Beta corresponds to speed and phase velocity. Both are frequency dependant

14 14 Theory (Distortionless Line) Set G=RC/L Frequency Independent speed and attenuation: Characteristic impedance: (pure resistive) Phase Velocity (Speed of light in the media) Attenuation:

15 15 Digital Signal Response

16 16 Interconnect Tech.: Transmission Line Add shunt conductance between differential wires Resistors realized by serpentine unsilicided poly, diffusion resistors, or high resistive metal

17 17 Geometrical Planning Wire Orientations Manhattan, Hexagonal, Octagonal, Euclidean Die Shapes Rectangle, Diamond, Hexagon, Octagon, Circle

18 18 Average Radius of Unit-Circle Area lambda geo. Shape Man.Y-ArchX-ArchEuclid. Square1.3291.1221.0701.017 Diamond1.2531.1211.0701.017 Hexagon1.2761.1001.0581.003 Octagon1.2721.1041.0541.001 Circle1.2731.1031.0551.000

19 19 Throughput : concurrent flow demand lambda geo. Shape Man.Y-ArchX-Arch* M: Square1.0001.2251.346 M: Diamond1.195 Y: Hexagon1.315 X: Octagon*1.420 *ratio of 0-90 planes and 45-135 planes is not fixed

20 20 Flow congestion map for uniform 90 Degree meshes

21 21 12 by 1213 by 13 Congestion map of square chip using X-architecture

22 22 12 by 1213 by 13 Y-architecture + Square Chip

23 23 Y Architecture + Hexagonal Chip

24 24 X-Architecture + Octagonal Chip

25 25 Manhattan Architecture + Diamond Chip

26 26 Routing Grids (http://www.xinitiative.org/img/062102forum.pdf) X-Architecture Y-Architecture

27 27 Interconnect Networks Optimized Interconnect Architecture Data Bus, Control Signals Shared Interconnect Packet Switching Circuit Switching RTL Level Partition

28 28 Interconnect Networks Physical Implementation

29 29 Interconnect Networks Obj: Power, Latency Constraints: Routing Area, Bandwidth Design Space: Topology Wire Styles, Switches Model: Traffic Demand Data Bus, Control Signals

30 30 Interconnect Networks: Design Flow

31 31 Power and Latency Tradeoffs for Optimal 8x8 Topologies

32 32 Topology Selection (Latency, Power, BW)

33 33 Topology Selection (Latency, Power, BW) Optimal 8-node topologies vs area resources

34 34 Clock Distributions

35 35 Clock: Linear Variations Model Process variation model Transistor length Wire width Linear variation model Power variation model Supply voltage varies randomly (10%)

36 36 Clock: RC Model Input: an n level meshes and h-trees Constraint: routing area, parameter variations Objective: skew

37 37 Simplified Circuit Model

38 38 Skew Expression Assumptions: 1.T<<R s C 2.R s /R <<R s C/T Using first order Taylor expansion e x =1+x,

39 39 Optimal Routing Resources Allocation

40 40 Inductance Diminishes Shunt Effects f(GHz)0.511.5233.545 skew(ps)3.94.25.87.59.9131726 0.5um wide 1.2 cm long copper wire Input skew 20ps

41 41 Clock Distributions Surfliner

42 42 Functional Modules (Data Path) Arithmetic Algorithms Logic Logic Styles Placement

43 43 Cyclic Shifter Delay: nlogn, Power: ¼ n 2

44 44 Fan-out Splitting Delay: n Power: 3/16 n 2

45 45 Cell Permutation Fix the input/output stage, permute cells of intermediate stages to further improve delay. Formulate as an ILP problem and solve by CPLEX. Optimal solution in terms of delay Delay/Power tradeoff Optimal Timing solution for 8-bit

46 46 Conclusion Interconnect Technologies Geometrical Planning Interconnect Networks Power and Clock Distributions Functional Modules

47 47 Interconnect Technologies Example: w= 85nm, t= 145nm Optimal interval Optimal buffer size Optimal delay r n = 10Kohm,c n =0.25fF,c g =2.34xc n =0.585fF r w =2ohm/um, c w =0.2fF/um

48 48 Experiments — Optimized Skew

49 49 Robustness Against Supply Voltage Variations


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