1. TRAMS PMB Meeting, Barcelona, 12 th November 2012 TRAMS: Terascale Reliable Adaptive Memory Systems Workpackage 1.4 Si-Yu Liao, Ewan Towie, Craig Riddet, Daniel Balaz, and Asen Asenov University of Glasgow

2. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Objectives of WP1 in the project ObjectiveTaskMilestoneDeliverable Variability and reliability analysis for bulk CMOST1.1 - T1.4MS2 (M12)D1.1 (M12) Variability and reliability analysis for FinFETT1.1 - T1.4MS3 (M18)D1.3 (M18) Variability and reliability exploration for III-V/GeT1.1 - T1.4MS5 (M30)D1.4 (M36) Variability and reliability exploration for CNTT1.1MS6 (M30)D1.2 (M24) TASKS IN WP1 Task 1.1: Design of bulk, FinFET, III-V/Ge and nanowire/CNT template devices. Extraction of nominal compact models Task 1.2: Simulation of statistical variability in fresh template devices. Extraction of statistical compact models. Task 1.3: Simulation of statistical reliability at particular levels of degradation. Extraction of statistical reliability compact models. T1.4 Extraction of reliability injectors   ☐ 

3. TRAMS PMB Meeting, Barcelona, 12 th November 2012 D1.4: PDK for sub 16 nm III-V/Ge CMOS transistors including statistical variability and reliability (M36) Significant feature enhancement of the drift-diffusion simulator for heterostructure device simulation (done) Scaling of current implant-free quantum well III-V/Ge devices to 15nm gate length (done) Development of Monte Carlo simulator for III-V/Ge devices (done) Calibration the drift-diffusion simulator for MC results (done) Uniform compact model extraction with temperature dependence (done) Statistical compact model (on-going) SRAM cell evaluation with Statistical compact model (to do)

4. TRAMS PMB Meeting, Barcelona, 12 th November 2012 TCAD simulations

5. TRAMS PMB Meeting, Barcelona, 12 th November 2012 nIFQWpIFQW Dimensions [nm] Gate length15 Lateral spacer width 3.75 S/D height15 S/D length35 Gate dielectric1.125 Channel thickness 3.75 EOT0.51 Doping concentrations [×10 17 cm − 3 ] Channel1.82 Substrate36.5 Source/Drain910 15nm Implant Free Quantum Well (IFQW) MOSFETs

6. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Drift-diffusion simulation: preliminary results InGaAs n-IFQWGemanium p-IFQW

7. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Spacer width nIFQW III-V MOSFETpIFQW Ge MOSFET V T [V] SS slope [mV/Dec.] DIBL I ON [μA/μm] V T [V] SS slope [mV/Dec.] DIBL I ON [μA/μm] 5nm LD 0.2952 107.13 0.0617 769 0.3202 95.70 0.0767 332 HD 0.2365 103.98 0.2474 93.10 4nm LD 0.2754 112.38 0.0722 986 0.2736 94.87 0.0691 406 HD 0.2068 105.95 0.2079 93.28 3.75nm default LD 0.2713 113.39 0.0750 1040 0.2651 94.91 0.0686 432 HD 0.2000 106.56 0.2000 93.49 3nm LD 0.2603 119.37 0.0835 1184 0.2442 95.49 0.0692 510 HD 0.1809 108.51 0.1784 94.39 2nm LD 0.2477 128.35 0.0958 1326 0.2251 97.54 0.0740 634 HD 0.1567 111.89 0.1548 96.38 1nm LD 0.2361 139.56 0.1086 1422 0.2117 101.12 0.0815 784 HD 0.1329 116.09 0.1342 98.97 Drift-diffusion simulation: preliminary results

8. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Monte-Carlo simulation InGaAs n-IFQWGemanium p-IFQW

9. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Monte-Carlo simulation: Boltzmann statistics InGaAs n-IFQWGemanium p-IFQW Unrealistic high current

10. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Monte-Carlo simulation: Fermi-Dirac statistics InGaAs n-IFQWGemanium p-IFQW

11. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Classical channel layer vs. quantum correction ClassicalQuantum correction SGDSGD Oxide/semiconductor Interface Inversion layer

12. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Monte-Carlo simulation: FD + quantum correction InGaAs n-IFQWGemanium p-IFQW

13. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Mobility calibration for DD simulation InGaAs n-IFQWGemanium p-IFQW

14. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Mobility calibration for DD simulation: V th recalibration InGaAs n-IFQWGemanium p-IFQW Optimized spacer width nIFQW III-V MOSFETpIFQW Ge MOSFET V T [V] SS slope [mV/Dec.] DIBL I ON [μA/μm] V T [V] SS slope [mV/Dec.] DIBL I ON [μA/μm] 2nm LD 0.3011 91.51 0.1064 1238 0.2717 95.31 0.0755 1401 HD 0.2000 89.66 0.2000 93.93

15. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Uniform compact model extraction

16. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Uniform compact model: room temperature

17. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Uniform compact model: from 270K to 390K 390K 270K 390K 270K 390K 270K 390K 270K

18. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Statistical variability

19. TRAMS PMB Meeting, Barcelona, 12 th November 2012 V t : RDD, LER, and MGG nIFQW pIFQW MGG (Ø=5nm) LER (3σ=2nm)RDD

20. TRAMS PMB Meeting, Barcelona, 12 th November 2012 V t : combined RDD + LER + MGG nIFQW pIFQW RDD + LER

21. TRAMS PMB Meeting, Barcelona, 12 th November 2012 V t : summary nIFQW pIFQW [mV]σV T [mV] RDD198.797734.2477 LER-2nm198.699312.6966 MGG-5nm152.132470.1904 RDD + LER-2nm196.95936.1603 RDD + LER-2nm + MGG - 5nm 149.645177.8176 [mV]σV T [mV] RDD203.59353.892 LER-2nm199.06615.141 MGG-5nm244.01770.880 RDD + LER-2nm202.98256.026 RDD + LER-2nm + MGG - 5nm 247.47587.671

22. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Drain current: combined RDD + LER 2nm + MGG 5nm nIFQW pIFQW RDD + LER 2nm

23. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Drain current: summary V D =1V [μA/μm] σI ON σI OFF RDD1092.102184.14870.10180.1447 LER-2nm1116.91831.3570.05840.0314 MGG-5nm979.3418133.17530.09430.2778 RDD + LER-2nm1110.373181.56950.11390.1847 RDD + LER-2nm + MGG-5nm 1003.542206.08250.14070.4748 V D =1V [μA/μm] σI ON σI OFF RDD1393.019142.35150.0887180.072727 LER-2nm1459.03935.41610.0683820.032687 MGG-5nm1491.492127.50460.588830.861444 RDD + LER-2nm1401.888144.6730.099820.09501 RDD + LER-2nm + MGG-5nm 1440.934188.72440.842171.65996 nIFQW pIFQW

24. TRAMS PMB Meeting, Barcelona, 12 th November 2012 Conclusion & Outlook  The 3D Monte-Carlo device simulations have been done for Boltzmann, Fermi-Dirac statistics for the accurate drive current prediction.  The carrier mobility model has been calibrated in drift-diffusion simulation for 2nm spacer devices with sub-diffusion doping.  The uniform compact models have been obtained from TCAD.  The temperature dependence has been studied.  The statistical variability has been investigated.  Statistical compact model and extraction strategy.  SRAM cell simulations with statistical compact model.

25. TRAMS PMB Meeting, Barcelona, 12 th November 2012