1. 20/9/20041 Black Box Modeling of LDMOSFET H. Taher, D. Schreurs and B. Nauwelaers TELEMIC Devices & Circuits Group

2. 20/9/20042 Contents IntroductionIntroduction onCapacitive effects on terminal currents Constructing the model Validation of the model Conclusions

3. 20/9/20043 % Modeling does not depend on S-parameters simulations % Device is described by dynamical model % The model used is BSIM3v3: N s =2,W s =80 um, Temp=27C Introduction Resistive dependence Capacitive dependence Inductive dependence ANN

4. 20/9/20044 Contents Introduction Capacitive effects on terminal currentsCapacitive effects on terminal currents Constructing the model Validation of the model Conclusions

5. 20/9/20045 Device in circuit simulator with 50 Ohm load

6. 20/9/20046 Dependence of drain current on voltage derivative Constructed from DC simulations

7. 20/9/20047 Dependence of gate current on voltage derivative Constructed from time domain simulations

8. 20/9/20048 Contents Introduction Capacitive effects on terminal currents Constructing the modelConstructing the model Validation of the model Conclusions

9. 20/9/20049 Constructing the behavioral model Circuit used in collecting I d dataCircuit used in collecting I g data

10. 20/9/200410 ANN Model Inputs Hidden layer 12 12 3 1 2 NxNx Input layer Output layer Outputs 3-layer MLP i k j XiXi NzNz Ny

11. 20/9/200411 Properties of ANN model I d model is –3layers MLP –12 neurons hidden layer –Test error less than 1% I g model is –3layers MLP –16 neurons hidden layer –Test error less than 1%

12. 20/9/200412 Contents Introduction Capacitive effects on terminal currents Constructing the model Validation of the modelValidation of the model Conclusions

13. 20/9/200413 Drain current obtained from BSIM3v3 modelDrain current obtained from ANN model Comparison between the drain current output from ANN model and output from BSIM3v3 V g =3.5 V V g =1 V

14. 20/9/200414 Comparison between the gate current output from ANN model and output from BSIM3v3 Outside the trained region V g =3.5 V V g =1 V

15. 20/9/200415 VgDC=1.0V, vgac=0.3sin(2*pi*150E+6)V, VdDC=30V Comparison between time domain drain current output from ANN model and output from BSIM3v3

16. 20/9/200416 Comparison between time domain gate current output from ANN model and output from BSIM3v3

17. 20/9/200417 S-Parameters Comparison S 11 S 12 S 21 V gs =1 V, V ds =30 V S 22 1

18. 20/9/200418 Contents Introduction Capacitive effects on terminal currents Constructing the model Validation of the model ConclusionsConclusions

19. 20/9/200419 Conclusions We presented a behavioral model for LDMOSFET based on ANN A good agreement between the responses of it with the corresponding outputs from BSIM3v3 model As a future work we will try to include the effect of the temperature in the model