1. SemiSouth Laboratories and Mississippi State Univ.
Mississippi Center for Advanced Semiconductor Prototyping

2. SemiSouth Laboratories, Inc. Silicon Carbide Electronics Specialists
Formed in July 2000 as a partnership - incorporated in Jan. 2002
A “spin-off” of Mississippi State.
Currently has 10 full-time employees
(including 5 recent MSU graduates)
Technology license in final stages of negotiation
MSU will hold minority stake in SSL in exchange for royalty-free, exclusive license for MSU SiC technology
1 Research Blvd., Suite 201
Starkville, MS 39595

3. SiC Wafer Size Comparison

4. Benefits of SiC Power Devices
• Lower On-resistance => increased system efficiency
• Higher Frequency => smaller passive components
• Higher Temperature => relaxed cooling requirements
Payoff: Improved System Performance
(size, weight, cost, reliability, efficiency)
Potential automotive applications:
1. Hybrid-electric vehicle: compact, efficient, high-temperature DC conversion
2. High-temperature applications: In-situ combustion monitoring, brake sensor, etc.

5. SiC High Temperature Power Devices Enable Advanced DoD “More Electric” Platforms in Future Battle Scenarios
Power
Conditioning
SiC HIGH TEMP
HIGH POWER
ELECTRONICS
Runs hotter with smaller cooling systems
More reliable
Higher thermal capacity
Greater temperature margin
More efficient
More power for the $
75% less space

6. Benefits of SiC RF Devices
• Higher Voltage => increased system efficiency
• Higher Linearity => improved broadband performance
• Higher Temperature => higher power density
Payoff: Improved System Performance
(size, weight, cost, reliability, efficiency)

7. SiC Advantages for Transmitters
Transmitter Size,
Weight & Cost
Higher Power Transistors
Fewer Circuits
Fewer Modules
Smaller, Lower Cost Systems
Improved Thermal Conductivity
Easier Cooling
High Temperature Capability
More Cooling Options
Higher Voltage Operation
Higher Device Impedance
Reduced Distribution Losses per Watt
Reduced Parasitics per Watt
Higher Frequency Operation
Higher Efficiency & Wider Bandwidth
Normalized Transistor Power Level
100 90 80 70 60 50
RF Amplifiers 40 30
Power Supplies 20 10
Other 1x 2x 3x 4x
The transistor power level drives solid state transmitter and T/R module size, weight, and cost.
Use of SiC is projected to reduce all three by 50% or more in the near future.

8. Generic condensed BJT fabrication
SiC substrate
Collector
Start
n-type epi
Base
p-type epi
Emitter
Implant
1600°C silane
implant anneal
Isolation etch
with SiC RIE
Si substrate
Base diffusion
p-type
Diffusion
oxidation
Lithography &
metal contacts C B E
Oxidation;
Generic condensed BJT fabrication
process for Si (above) and SiC (left)

9. MSU - SiC BACKGROUND Emerging Materials Research Lab (EMRL)
Dual-tube, 75 mm diameter SiC reactor
Growth of SiC epitaxy since 1995 (All major polytypes)
Mississippi Center for Advanced Semiconductor Prototyping (MCASP)
P, N, SI epitaxy development
Basic Device design & development
Characterization (PL, CV, DLTS)
Scale-up all processes for manufacturing
System prototypes, virtual incubator

10. MCASP - Background
The Mississippi Center For Advanced Semiconductor Prototyping (MCASP) is one of the leading research institutions doing research in SiC devices.
The Mississippi State University facility is exclusively used for SiC semiconductor electronics prototyping and research.
---
The principle advantages of SiC power devices are their low on-resistance, improved frequency and higher operating temperatures. These advantages increase system efficiency, reduces the number of passive components and cooling requirements respectively. The advantages of SiC RF devices are their higher voltage, higher linearity and higher operating
temperature which improves efficiency, broadband performance and power density.

11. Leveraging Basic Research into Advanced Technology at Mississippi State University Rapid, economical transfer of government sponsored technology development into systems
Component Production
New Small Businesses
Semiconductor Industry
Basic Materials
Development
SiC Power Device Prototyping
10 to 100X Improvement in Power Density
From MSU research
Systems Production
Defense OEM’s
Commercial OEM’s

12. SEMISOUTH LABORATORIES
GOAL: Become a leading supplier of SiC discrete and integrated electronic devices.
Power Rectifiers & Switches
High-frequency power amplifiers
Smart Power/RF Integrated Circuits
Fast, effective technology transfer from Mississippi Center for Advanced Semiconductor Prototyping (MCASP).
Uses university resources to establish immediate low-volume production.

13. SemiSouth Product Development
1994
MCASP /
S.B. Diode
Materials /
Circuit Design
BJT
VJFET
PIN Diode
Smart Power
I.C.’s
Lateral
JFET
2000
2001
2002
2003
Technology
600 V SIT for high-power radar
transmitt. & cell-phone base st.
Commercialization
600 V SBD for biomedical
1800 V BJT for DC-DC conv. in space
1800 V PIN for power cond.
Applications
Smart power I.C. for satellite smart structural
control & commercial lamp ballasts

14. SemiSouth Organization Chart
10 full-time employees in Jan. 2002
8 with advanced degrees
6 MSU graduates
M. State - MCASP
SSL leases time
as-needed

15. MCASP Organization Chart
Full-Time
Staff Totals:
MCASP
Ph.D. - 4
M.S. - 2
B.S. - 1
Tech. - 3
SemiSouth
Ph.D. - 1
B.S. - 2
Tech. -1
10 Graduate Students
4 Undergrad Students

16. Research Park Aerial View RTC building to be added in 2002-3
20,000 s.f.
7,500 s.f. lab space including clean room

17. MCASP Facilities Lam 9400 RIE system Lam 9900 PECVD system Hitachi SEM
GCA g-line stepper
Varian e-beam
Varian sputter
Test Equipment to 3 kV, 400 A
Automatic prober to 400°C
SiC epitaxy reactors

18. Lam 9900 PECVD
Used to deposit SiO2 for implant mask or final passivation
High Density Plasma (one microwave and one RF power source)
SiH4 (Si source) and O2 (oxygen source)
NF3 chamber clean
Donated by Lam Research, Inc., May 2000

19. Summary - SemiSouth
SemiSouth will have govt. revenues > $1.5 M over the next 3 years to fund engineering & device IP development.
MCASP Incubator will house device production facilities for next 3-5 years.
10 full-time high-tech jobs already created… mostly filled with MSU graduates
SemiSouth will build a privately owned SiC epi development and production facility.
Additional capital will expand this facility.

20. Summary - MCASP
MCASP launched to move SiC technology towards Advanced Technology Demonstrations.
A total of $11M in funding expected over next months for discrete and integrated power devices.
SemiSouth business creates economic development & increases MSU research $$
MSU Research & Tech. Corp will build 20,000 sq. ft incubator facility to house MCASP, SemiSouth, high-tech businesses in

21. Acknowledgments Office for Research Government Sponsors
Research Technology Corporation
Government Sponsors
(AFRL, ONR, BMDO)
Industry affiliates