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Suitable is the best. About Allwin21 Corporation Allwin21 Corp. was formed in 2000 to provide Rapid Thermal Process, Plasma Asher Stripper Descum, Plasma.

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Presentation on theme: "Suitable is the best. About Allwin21 Corporation Allwin21 Corp. was formed in 2000 to provide Rapid Thermal Process, Plasma Asher Stripper Descum, Plasma."— Presentation transcript:

1 Suitable is the best

2 About Allwin21 Corporation Allwin21 Corp. was formed in 2000 to provide Rapid Thermal Process, Plasma Asher Stripper Descum, Plasma Etch/RIE/ICP, Sputtering and Evaporator System, Metrology and Tester high- tech equipment, services and technical support in Semiconductor industry, MEMS, Biomedical, Nanotechnology, Solar, LEDs etc. Located in Santa Clara, the heart of Silicon Valley, Allwin21 has been providing unique technical support, high quality equipment and fast supplied spare parts worldwide. We have maintained a global presence that has grown and expanded. into the major high- tech manufacturing areas of the world. We pride ourselves on developing lasting customer and client relationships.Allwin21 is proud to announce it is certified as ISO 9001:2008 compliant organizations.

3 Allwin21 Mission Statement To deliver unique, high value-added solutions to our customers, using Allwin21's proven products that are leveraged by our innovative technologies. We are dedicated to providing unique solutions that enable new processes, improve yield, increase uptime, reduce maintenance costs, and extend life of capital equipment. Professionally provide advanced high-tech equipment suitable to customer preferences and needs

4 Company Distribution Allwin21 Corp Beijing. Allwin21 Corp USA Japan Korea Headquarter Subcompany or office Agents Allwin21 Corp Nanjing Taiwan Britain France GermanyIsrael India Vietnam Poland BrazilSingapore

5 Allwin21 Main Customers

6 Innovative Technologies Process development and enhancement – Combined 30 years of process experience System control on board/component level – Superior customer support Advanced AW Software for each equipment – User-friendly with excellent customer reception – Enhanced automated system diagnostics for better serviceability – Integrated process control system – Real time graphics display – Real time process data acquisition, display, and analysis – Programmed comprehensive calibration and diagnostic functions – Better performance and maintenance than the original systems Precise Temperature Control Technology – Much better uniformity – Much better repeatability

7 Main Products and Services Equipment –Rapid Thermal Process –Plasma Asher Descum –Plasma Etch RIE ICP –Sputtering System –Metrology & E-Tester Services – Refurbishment – Upgrade – On site service Spare parts

8 Thin Film Deposition Technology Physical Vapor Deposition (PVD) -Film is formed by atoms directly transported from source to the substrate through gas phase Evaporation Thermal evaporation E-beam evaporation Sputtering DC Diode sputtering DC Magnetron sputtering RF Diode sputtering RF Magnetron sputtering Reactive sputtering Chemical Vapor Deposition (CVD) -Film is formed by chemical reaction on the surface of substrate Low-Pressure CVD (LPCVD) Plasma-Enhanced CVD (PECVD) Atmosphere-Pressure CVD (APCVD) Metal-Organic CVD (MOCVD) Oxidation Spin Coating Platting

9 General Characteristics of Thin Film Deposition Deposition Rate Film Uniformity Across wafer uniformity Run-to-run uniformity Materials that can be deposited Metal Dielectric Polymer Quality of Film –Physical and Chemical Properties Stress Adhesion Stoichiometry Film density, pinhole density Grain size, boundary property, and orientation Breakdown voltage Impurity level Deposition Directionality Directional: good for lift-off, trench filling Non-directional: good for step coverage Cost of ownership and operation

10 Comparison of Thin Film Deposition Technology

11 Sputtering Deposition Sputtering is a term used to describe the mechanism in which atoms are ejected from the surface of a material when that surface is stuck by sufficiency energetic particles. Alternative to evaporation. First discovered in 1852, and developed as a thin film deposition technique by Langmuir in 1920.

12 Why purchase Allwin21 Sputtering Deposition Systems? Description Q Quality 20 years proven true work horse systems Made in U.S.A Thousands units in fabs/labs Better Performance Advanced AW Software with precise control technology C Cost Lowest ownership cost Different models and configurations for different applications and budgets D Delivery Industry-leading 8 to 12 weeks lead time Service * Local engineers trained by U.S.A engineers Phone and email support by U.S.A engineers in local language U.S.A. engineers can provide on site support in 72 hours if necessary. R Relationship We have been looking for Win-Win-Win relationship with our customers; We pride ourselves on developing lasting customer and client relationships. * BE RESPONSIBLE BY OUR LOCAL REP. Suitable is the best All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

13 Allwin21 Sputter Deposition System Models AccuSputter AW 4450 Series -Brand New Sputter deposition systems with load lock and all different configuration. Perkin-Elmer 4400 Series -Fully refurbished and upgraded sputtering deposition systems with load lock. Perkin-Elmer 4400 : 1 to 4 round cathodes Perkin-Elmer 4410 : 1 to 3 Delta cathodes Perkin-Elmer 4450 : 1 to 3 Delta cathodes and Turbo pump Perkin-Elmer 4480 : 1 to 3 Delta cathodes and Turbo Pump and automatic wafer transfer Perkin-Elmer 2400 Series -Fully refurbished and upgraded sputtering deposition systems without load lock. All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

14 AW Sputter Deposition System Structure All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

15 Sputter Deposition Load Lock and Chamber and Hoist All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

16 AW Sputter Deposition Load Lock and Chamber All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

17 AW Sputter Deposition AW Controller All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

18 AW Sputter Deposition AW Controller-2 All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

19 AW Sputter Deposition System Layout Utilities: Rear-mounted electrical, water, gas and LN2 inlet panel Power distribution box Water flow switch panel and manifold 10kW DC power supply: 208VAC, 60Hz, 3phases, 60A, 4 wires Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires Cooling Water: 1.8gpm3 Process N2: 60-70 psi Process Argon: 5-10 psi CDA: 40-60 psi Dimensions and Weight: Width: 65.000 in (165.1 cm) Depth: 46.000 in (116.8 cm) Height: 68.000 in (172.7 cm) Weight: 2,288 lb (1,038 kg) All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

20 AW Sputter Deposition System Key Features Advanced AccuSputter ® AW4450 Controller with GUI mounted in the main frame; Manual, Semi and Automatic one button operation; Customer programming of recipe for process parameters. GEM/SEC II functions (Optional) 24V DC control components DC Gear Motors for table rotate and carriage moving; Advanced vacuum gauges and control system; MFC gas control system; Advanced RF automatically matching network; DC and RF power are mounted in the main frame; Fast Cycle Load Lock Operation ; High rate Delta TM DC magnetron sputtering; High throughput operation: Automated load lock and controller sequences provide for efficient pump down and pallet transfer to process chamber High uniformity: ±7% deposition uniformity guaranteed with water-cooled rotating annular substrate table; ±5% achievable. Ultra -clean vacuum: Cryopumped and Meissner-trapped process chamber ensures contamination-free conditions especially important for critical processes such as the deposition of aluminum and platinum; Easy maintenance: Removable deposition shields permit easy system cleaning. Automatic cryopump regeneration minimizes downtime and inconvenience; Specialized pallets for ease of substrate leading/unloading; "Drop in" target for quick target changes, no screw to both with; "Snap-out" deposition shields for quick, easy maintenance; Fail-safe system protection All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

21 AW Sputter System Configuration-Chamber 28" diameter X 12" high stainless steel cylinder with 6" CF flange viewport and load lock port 28" diameter stainless steel top plate with 3 delta cathode ports. Adaptor for 8-inch or 6-inch target is optional. 28" diameter stainless steel base plate 1 1 / 2 " air-operated roughing isolation valve Air-operated gas inlet valve Air-operated vent valve 1 1 / 2 " blanked-off leak check port Removable deposition shields 23" diameter, 3-position water-cooled annular substrate table with variable-speed motorized table drive Full circle shutter with vane shutter Chain drive pallet carrier transport Heavy duty electric hoist All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

22 AW Sputter System Configuration-Load Lock 30" x 28" x 8" stainless steel load lock chamber with aluminum cover 2" air-operated roughing isolation valve Air-operated vent valve 23" diameter molybdenum annular substrate pallet Pallet carrier and chain drive transport All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

23 AW Sputter System Configuration-Vacuum Roughing 36.7 cfm mechanical pump for process chamber and load lock roughing 2" diameter roughing lines with electro-pneumatic valve Surface-area Versa-trap TM in roughing line High vacuum pumping 2 stage cryopump with 1000 l/s pumping speed for air, including chevron, water-cooled compressor and lines, automatic regeneration controller and plumbing kit. 7 1 / 2 " O.D. (6" ASA) aluminum air-operated gate valve Air-operated venetian blind throttling valve Residual gas pumping Full flood Meissner trap with 30,000 l/s pumping speed for water vapor Insylated LN 2 lines LN 2 sensor, solenoid and relief valve Control Vacuum gauging package including basic digital vacuum gauge control, ionization tube and two thermal tubes Automatic pump-down controller Automatic lock controller Options Load lock Hi-VAC pump-Turbo Pump All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

24 Typical Deposition Materials Al+WCr/SiO 2 SiCTi+Au Al+Ti/W+AgInSnOSiO 2 Ti+Au+Ni Al 2 O 3 MoSiO 2 +O 2 Ti/W AgMoSi 2 Si+N2(Si 3 N 4 )Ti/W+Au AuMo 2 Si 5 Si+N2+B 4 CTi/W+Au+Ta CMo 5 Si 3 TaTi/W+Al/Si CrNiTaCTi/W+Ni/Cr+Au Cr/CoNi/CrTa+AuTi/W+Pt Cr/AuNi+Ni/CrTaSi 2 W Cr+CuNi/FeTa+SiO 2 Cr/SiNi/Fe+Cu+SiO 2 TiO 2 Zn Cr/SiOPtTiO 2 +CrZnO 2 Zr All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

25 Batch Throughput and Substrate Customized All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

26 Typical Throughput PERFORMANCE FOR TYPICAL METALLIZATION PROCESS-100mm WAFERS Standard Delta SystemHigh Throughput Delta Systems Pallet capacity1422 Uniformity+/-7%(6 3 / 4 ") band+/-5%(7 3 / 4 " band) +/-7%(8" band) Typical Target Life3220 wafers4070 wafers Typical Deposition Rate200 Angstroms/kw-min170 Angstroms/kw-min Typical Deposition time5 minutes5.9 minutes * Runs per hour4.03.8 Throughput56 wafers/hour83 wafers/hour * Assumes 10 minute pumping, wafer exchange and venting cycle, some processes require pre-heating, extending the loading cycle by as much as 5 minutes. All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

27 Target Cathodes-Amount All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

28 Cathode Type for Different Sputter Types DCRFPulse DC DiodeMetalMetal /Dielectric MagnetronMetalMetal /Dielectric All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

29 Can be for 8 inch or 6 inch circular target with special adaptor. 8 inch 6 inch Customized,such as 2 inch, 3 inch, 4 inch, 5 inch Cathodes for Different Target Shape and Size All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

30 Typical Deposition Materials and Sputter Rates Angstroms/min/kw MaterialDelta (1) RF Diode Delta (1) RF Magnetron Delta DC Magnetron Ag480 Al200 Al 2 O 3 (3) 40 Au400 Cr180 CrN x 160 CrSi 2 125 Cu80320 Mo220 MoSi 2 150 Ni (2) Nichrome125 Pd390 Permalloy (2) Pt280 Quartz (3) 2550 Si (3) 90 Si 3 N 4 (3) 30 Ta150 TaN x 140 Ti140 TiN x 125 Ti/W(10%)150 W Wn x 125 All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

31 Typical Deposition Materials and Sputter Rate The seller is neither responsible for any customers' applications and processes nor for any production loss due to machine failure, damage, or shut-down by any causes. Rates shown above are given in angstroms/min/kw, and are typical only. Actual rates for any given system will depend upon process and system parameters. Rates are approximately linear with applied power except where otherwise indicated. Some materials, due to their nature, are limited to power levels substantially less than the maximum power ratings for each cathode type. 1 Insufficient data available for most materials with RF Delta operation - DC magnetron recommended for metals. 2 Ferromagnetic materials - magnetron mode is possible with thin targets only but not recommended. 3 Dielectric materials - require the use of RF power. Rates are non-linear. All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

32 Sputter Uniformity and Quality of Film Wafer SizeLoading Capacity Deposition Uniformity Std DeltaHigh Perf. Delta 3inch30+/-7%+/-5% 100mm22N/A+/-5% 14+/-7%+/-4% 13+/-5%+/-4% 125mm10+/-7%+/-5% 9+/-4% 150mm8+/-12%+/-5% 7+/-7%+/-4% 8inch5+/-14%+/-7% All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

33 RF Etch and RF Bias Function EF Etching: EF Etching: Essentially the reverse process of RF diode sputter deposition, in which the substrate table becomes the cathode (negative pole) and the target assembly becomes the anode (positive pole). Under these circumstances, surface material from the substrates is ejected. Surface impurities are ejected along with substrates material, making this process useful for pre-cleaning substrate prior to sputter deposition. In order to prevent ejected material from contaminating the target, s shutter is positioned between target and substrate. Bias sputtering: Bias sputtering: Combines the DC or RF sputtering and the RF etching operations. While DC or RF power is applied to the target, a small amount of RF is also applied to the substrate table. As a result, the substrate and target are both bombarded by ions ( the substrate to a lesser extent than the target ). In many applications this process yields superior quality films than can be attained using DC or RF sputtering with grounded substrates. Bias sputtering influences the crystal structure, and tends to re-sputter trapped argon from the growing film during deposition and rearrange individual atoms of the sputtered material; this improves stoichiometry and step coverage. Bias sputtering can be used to adjust film resistivity and film stress to desired levels. All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

34 DC Power and RF Power DC SputterRF SputterRF EtchRF Bias Round Cathodes 1-5KW1-2KW0.3-1.2KW Delta Cathodes1-10KW1-3KW0.3-1.2KW All specification and information here are subject to change without notice and can not be used for purchase and facility plan. Suitable is the best

35 Process Gases 100 SCCM Ar 100 SCCM N2 100 SCCM O2 Customized OPTIONAL All specification and information here are subject to change without notice and can not be used for purchase and facility plan. Suitable is the best

36 Typical Process Data-1 High quality metal films can be routinely achieved: Material:Al-1%Si Power:9kw Table rotation:10 rpm Argon pressure:8 mTorr Film thickness:1.04 microns Deposition time:5.8 minutes Step height: 1.10 microns Step slope: 80 o Step coverage: 62% horizontal-to-vertical Specularity: 65-75% Resistivity: 2.85μΩ-cm Grain size:2 microns All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

37 Typical Process Data-2 Delta Cathode Systems MaterialAl/1%SiAl/1%Si/2%CuAl/4%Cu DC Power10 kw Base Pressure5X10 -7 Torr Pumpdown Time3.5 min. 3.5 min Argon Pressure8X10 -3 Torr Table Rotation2-5 rpm Deposition Rate2000 Å /min Film Thickness1.0 microns Step Hight1.0 microns Step Slop/Coverage70 o /70% 80 o /60% 90 o /50% Specularity70-75%80-85%90-95% Resistivity 2.85-2.90 μΩ-cm 2.95-3.00 μΩ-cm Grain Size 1-2 μm 0.3-0.5 μm 0.3-0.5 μ Film Hardness (Annealed) 85kg/mm 2 100kg/mm 2 120kg/mm 2 CV Shift0.25V0.15V * Uniformity+/-7% * Typical results with Standard Delta Cathodes. Higher uniformity and throughput can be achieved with high performance Delta Cathodes and high throughput option. Throughput is process dependent and may vary depending on etch and pre-heat cycles. All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

38 Other Optional Accessories and functions All specification and information here are subject to change without notice and can not be used for purchase and facility plan. RF Bias Co-Sputter Load Lock Radiant Heat (Up to 200C) In Process Radiant Heat (Up to 350C) Turbo Pump for Load Lock Professionally provide advanced high-tech equipment suitable to customer preferences and needs Suitable is the best

39 Questionnaire QuestionsFeedback Budget Sputter Material, Sputter Rate, Sputter Uniformity and Quality of Film Spec. Throughput Wafer Size, Material, Shape Target Cathode Amount, Type, Shape, Size RF Etch Function DC Power and RF Power capability Process Gas and MFC range Turbo Pump Mechanical Pump Typical Process Recipe Special Requirements Professionally provide advanced high-tech equipment suitable to customer preferences and needs Suitable is the best

40 Contact Us Address:3521 Leonard Court,Santa Clara,CA95054,U.S.A. Telephone:1-408-988-5188 Fax:1-408-904-7168 E-mail: sales@allwin21.com Website: www.allwin21.com All specification and information here are subject to change without notice and can not be used for purchase and facility plan.


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