1. Suitable is the best

2. About Allwin21 Corporation
Allwin21 Corp. was formed in 2000 to provide Rapid Thermal Process, Plasma Asher Stripper Descum, Plasma Etch/RIE/ICP, Sputtering and Evaporator System, Metrology and Tester high-tech equipment, services and technical support in Semiconductor industry, MEMS, Biomedical, Nanotechnology, Solar, LEDs etc.
Located in Santa Clara, the heart of Silicon Valley, Allwin21 has been providing unique technical support, high quality equipment and fast supplied spare parts worldwide. We have maintained a global presence that has grown and expanded. into the major high-tech manufacturing areas of the world. We pride ourselves on developing lasting customer and client relationships.Allwin21 is proud to announce it is certified as ISO 9001:2008 compliant organizations.

3. Allwin21 Mission Statement
To deliver unique, high value-added solutions to our customers, using Allwin21's proven products that are leveraged by our innovative technologies.
We are dedicated to providing unique solutions that enable new processes, improve yield, increase uptime, reduce maintenance costs, and extend life of capital equipment.
Professionally provide advanced high-tech equipment suitable to customer preferences and needs

4. Company Distribution Allwin21 Corp USA Korea Britain France Poland
Germany
Israel
Allwin21 Corp
Beijing.
Allwin21 Corp
Nanjing
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Japan
Taiwan
Headquarter
Subcompany or office
Agents
Brazil
India
Singapore
Vietnam

5. Allwin21 Main Customers

6. Innovative Technologies
Process development and enhancement
Combined 30 years of process experience
System control on board/component level
Superior customer support
Advanced AW Software for each equipment
User-friendly with excellent customer reception
Enhanced automated system diagnostics for better serviceability
Integrated process control system
Real time graphics display
Real time process data acquisition, display, and analysis
Programmed comprehensive calibration and diagnostic functions
Better performance and maintenance than the original systems
Precise Temperature Control Technology
Much better uniformity
Much better repeatability
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7. Main Products and Services
Equipment
Rapid Thermal Process
Plasma Asher Descum
Plasma Etch RIE ICP
Sputtering System
Metrology & E-Tester
Services
Refurbishment
Upgrade
On site service
Spare parts

8. Thin Film Deposition Technology
Physical Vapor Deposition (PVD)
-Film is formed by atoms directly transported from source to the substrate through gas phase
Evaporation
Thermal evaporation
E-beam evaporation
Sputtering
DC Diode sputtering
DC Magnetron sputtering
RF Diode sputtering
RF Magnetron sputtering
Reactive sputtering
Chemical Vapor Deposition (CVD)
-Film is formed by chemical reaction on the surface of substrate
Low-Pressure CVD (LPCVD)
Plasma-Enhanced CVD (PECVD)
Atmosphere-Pressure CVD (APCVD)
Metal-Organic CVD (MOCVD)
Oxidation
Spin Coating
Platting

9. General Characteristics of Thin Film Deposition
• Deposition Rate
• Film Uniformity
Across wafer uniformity
Run-to-run uniformity
• Materials that can be deposited
Metal
Dielectric
Polymer
• Quality of Film –Physical and Chemical Properties
Stress
Adhesion
Stoichiometry
Film density, pinhole density
Grain size, boundary property, and orientation
Breakdown voltage
Impurity level
•Deposition Directionality
Directional: good for lift-off, trench filling
Non-directional: good for step coverage
•Cost of ownership and operation

10. Comparison of Thin Film Deposition Technology

11. Sputtering Deposition
Sputtering is a term used to describe the mechanism in which atoms are ejected from the surface of a material when that surface is stuck by sufficiency energetic particles.
Alternative to evaporation.
First discovered in 1852, and developed as a thin film deposition technique by Langmuir in 1920.

12. Why purchase Allwin21 Sputtering Deposition Systems?
Suitable is the best
Description
Quality
20 years proven true “work horse” systems
Made in U.S.A
Thousands units in fabs/labs
Better Performance
Advanced AW Software with precise control technology
Cost
Lowest ownership cost
Different models and configurations for different applications and budgets
Delivery
Industry-leading 8 to 12 weeks lead time
Service*
Local engineers trained by U.S.A engineers
Phone and support by U.S.A engineers in local language
U.S.A. engineers can provide on site support in 72 hours if necessary.
Relationship
We have been looking for Win-Win-Win relationship with our customers;
We pride ourselves on developing lasting customer and client relationships.
* BE RESPONSIBLE BY OUR LOCAL REP.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

13. Allwin21 Sputter Deposition System Models
AccuSputter AW 4450 Series
-Brand New Sputter deposition systems with load lock and all different configuration.
Perkin-Elmer 4400 Series
-Fully refurbished and upgraded sputtering deposition systems with load lock.
Perkin-Elmer 4400 : 1 to 4 round cathodes
Perkin-Elmer : 1 to 3 Delta cathodes
Perkin-Elmer : 1 to 3 Delta cathodes and Turbo pump
Perkin-Elmer 4480 : 1 to 3 Delta cathodes and Turbo Pump and automatic wafer transfer
Perkin-Elmer 2400 Series
-Fully refurbished and upgraded sputtering deposition systems without load lock.
Budget
Throughput
Sputter Rate
Material Amount
Uniformity
Quality of Film
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

14. AW Sputter Deposition System Structure
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

15. Sputter Deposition Load Lock and Chamber and Hoist
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

16. AW Sputter Deposition Load Lock and Chamber
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

17. AW Sputter Deposition AW Controller
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

18. AW Sputter Deposition AW Controller-2
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

19. AW Sputter Deposition System Layout
Utilities:
Rear-mounted electrical, water, gas and LN2 inlet panel
Power distribution box
Water flow switch panel and manifold
10kW DC power supply: 208VAC, 60Hz, 3phases, 60A, 4 wires
Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires
Cooling Water: 1.8gpm3
Process N2: psi
Process Argon: 5-10 psi
CDA: psi
Dimensions and Weight:
Width: in (165.1 cm)
Depth: in (116.8 cm)
Height: in (172.7 cm)
Weight: 2,288 lb (1,038 kg)
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

20. AW Sputter Deposition System Key Features
Advanced AccuSputter ® AW4450 Controller with GUI mounted in the main frame;
Manual, Semi and Automatic one button operation;
Customer programming of recipe for process parameters.
GEM/SEC II functions (Optional)
24V DC control components
DC Gear Motors for table rotate and carriage moving;
Advanced vacuum gauges and control system;
MFC gas control system;
Advanced RF automatically matching network;
DC and RF power are mounted in the main frame;
Fast Cycle Load Lock Operation ;
High rate DeltaTM DC magnetron sputtering;
High throughput operation: Automated load lock and controller sequences provide for efficient pump down and pallet transfer to process chamber
High uniformity: ±7% deposition uniformity guaranteed with water-cooled rotating annular substrate table; ±5% achievable.
Ultra-clean vacuum: Cryopumped and Meissner-trapped process chamber ensures contamination-free conditions especially important for critical processes such as the deposition of aluminum and platinum;
Easy maintenance: Removable deposition shields permit easy system cleaning. Automatic cryopump regeneration minimizes downtime and inconvenience;
Specialized pallets for ease of substrate leading/unloading;
"Drop in" target for quick target changes, no screw to both with;
"Snap-out" deposition shields for quick, easy maintenance;
Fail-safe system protection
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

21. AW Sputter System Configuration-Chamber
28" diameter X 12" high stainless steel cylinder with 6" CF flange viewport and load lock port
28" diameter stainless steel top plate with 3 delta cathode ports. Adaptor for 8-inch or 6-inch target is optional.
28" diameter stainless steel base plate
11/2" air-operated roughing isolation valve
Air-operated gas inlet valve
Air-operated vent valve
11/2" blanked-off leak check port
Removable deposition shields
23" diameter, 3-position water-cooled annular
substrate table with variable-speed motorized table drive
Full circle shutter with vane shutter
Chain drive pallet carrier transport
Heavy duty electric hoist
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

22. AW Sputter System Configuration-Load Lock
30" x 28" x 8" stainless steel load lock chamber with aluminum cover
2" air-operated roughing isolation valve
Air-operated vent valve
23" diameter molybdenum annular substrate pallet
Pallet carrier and chain drive transport
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

23. AW Sputter System Configuration-Vacuum
Roughing
36.7 cfm mechanical pump for process chamber and load lock roughing
2" diameter roughing lines with electro-pneumatic valve
Surface-area Versa-trapTM in roughing line
High vacuum pumping
2 stage cryopump with 1000 l/s pumping speed for air, including chevron, water-cooled compressor and lines, automatic regeneration controller and plumbing kit.
71/2" O.D. (6" ASA) aluminum air-operated gate valve
Air-operated venetian blind throttling valve
Residual gas pumping
Full flood Meissner trap with 30,000 l/s pumping speed for water vapor
Insylated LN2 lines
LN2 sensor, solenoid and relief valve
Control
Vacuum gauging package including basic digital vacuum gauge control, ionization tube and two thermal tubes
Automatic pump-down controller
Automatic lock controller
Options
Load lock Hi-VAC pump-Turbo Pump
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

24. Typical Deposition Materials
Al+W
Cr/SiO2
SiC
Ti+Au
Al+Ti/W+Ag
InSnO
SiO2
Ti+Au+Ni
Al2O3 Mo
SiO2+O2
Ti/W Ag
MoSi2
Si+N2(Si3N4)
Ti/W+Au Au
Mo2Si5
Si+N2+B4C
Ti/W+Au+Ta C
Mo5Si3 Ta
Ti/W+Al/Si Cr Ni
TaC
Ti/W+Ni/Cr+Au
Cr/Co
Ni/Cr
Ta+Au
Ti/W+Pt
Cr/Au
Ni+Ni/Cr
TaSi2 W
Cr+Cu
Ni/Fe
Ta+SiO2
Cr/Si
Ni/Fe+Cu+SiO2
TiO2 Zn
Cr/SiO Pt
TiO2+Cr
ZnO2 Zr
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

25. Batch Throughput and Substrate
Customized
Target Shape
Target Size
Throughput
Uniformity
Quality of Film
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

26. Typical Throughput Standard Delta System High Throughput Delta Systems
PERFORMANCE FOR TYPICAL METALLIZATION PROCESS-100mm WAFERS
Standard Delta System
High Throughput Delta Systems
Pallet capacity 14 22
Uniformity
+/-7%(63/4") band
+/-5%(73/4" band)
+/-7%(8" band)
Typical Target Life
3220 wafers
4070 wafers
Typical Deposition Rate
200 Angstroms/kw-min
170 Angstroms/kw-min
Typical Deposition time
5 minutes
5.9 minutes
*Runs per hour
4.0
3.8
Throughput
56 wafers/hour
83 wafers/hour
* Assumes 10 minute pumping, wafer exchange and venting cycle, some processes require pre-heating, extending the loading cycle by as much as 5 minutes.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

27. Target Cathodes-Amount
Material Amount
Uniformity
Sputter Rate
Throughput
Quality of Film
Budget
Up to 4
Up to 3
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

28. Cathode Type for Different Sputter TypesDC RF
Pulse DC
Diode
Metal
Metal /Dielectric
Magnetron
Material
Uniformity
Sputter Rate
Throughput
Quality of Film
Budget
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

29. Cathodes for Different Target Shape and Size
Can be for 8 inch or 6 inch circular target with special adaptor.
8 inch
6 inch
Customized ,such as 2 inch, 3 inch, 4 inch, 5 inch
Target Cost
Uniformity
Sputter Rate
Throughput
Quality of Film
Budget
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

30. Typical Deposition Materials and Sputter Rates
Delta(1)
RF Diode
RF Magnetron
Delta
DC Magnetron Ag
480 Al
200
Al2O3(3) 40 Au
400 Cr
180
CrNx
160
CrSi2
125 Cu 80
320 Mo
220
MoSi2
150
Ni(2)
Nichrome Pd
390
Permalloy(2) Pt
280
Quartz(3) 25 50
Si(3) 90
Si3N4(3) 30 Ta
TaNx
140 Ti
TiNx
Ti/W(10%) W
Wnx
Angstroms/min/kw
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

31. Typical Deposition Materials and Sputter Rate
Rates shown above are given in angstroms/min/kw, and are typical only. Actual rates for any given system will depend upon process and system parameters. Rates are approximately linear with applied power except where otherwise indicated. Some materials, due to their nature, are limited to power levels substantially less than the maximum power ratings for each cathode type.
1 Insufficient data available for most materials with RF Delta operation - DC magnetron recommended for metals.
2 Ferromagnetic materials - magnetron mode is possible with thin targets only but not recommended.
3 Dielectric materials - require the use of RF power. Rates are non-linear.
The seller is neither responsible for any customers' applications and processes nor for any production loss due to machine failure, damage, or shut-down by any causes.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

32. Sputter Uniformity and Quality of Film
Wafer Size
Loading
Capacity
Deposition Uniformity
Std Delta
High Perf. Delta
3inch 30
+/-7%
+/-5%
100mm 22
N/A 14
+/-4% 13
125mm 10 9
150mm 8
+/-12% 7
8inch 5
+/-14%
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

33. RF Etch and RF Bias Function
EF Etching: Essentially the reverse process of RF diode sputter deposition, in which the substrate table becomes the cathode (negative pole) and the target assembly becomes the anode (positive pole). Under these circumstances, surface material from the substrates is ejected. Surface impurities are ejected along with substrates material, making this process useful for pre-cleaning substrate prior to sputter deposition. In order to prevent ejected material from contaminating the target, s shutter is positioned between target and substrate.
Bias sputtering: Combines the DC or RF sputtering and the RF etching operations. While DC or RF power is applied to the target, a small amount of RF is also applied to the substrate table. As a result, the substrate and target are both bombarded by ions ( the substrate to a lesser extent than the target ). In many applications this process yields superior quality films than can be attained using DC or RF sputtering with grounded substrates. Bias sputtering influences the crystal structure, and tends to re-sputter trapped argon from the growing film during deposition and rearrange individual atoms of the sputtered material; this improves stoichiometry and step coverage. Bias sputtering can be used to adjust film resistivity and film stress to desired levels.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

34. Suitable is the best DC Power and RF Power Budget Material
DC Sputter
RF Sputter
RF Etch
RF Bias
Round Cathodes
1-5KW
1-2KW KW
Delta Cathodes
1-10KW
1-3KW
Budget
Material
Sputter Rate
Throughput
Quality of Film
Suitable is the best
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

35. 100 SCCM Ar 100 SCCM N2 100 SCCM O2 Customized OPTIONAL
Process Gases
100 SCCM Ar
100 SCCM N2
100 SCCM O2
Customized
OPTIONAL
Suitable is the best
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

36. Typical Process Data-1
High quality metal films can be routinely achieved:
Material:Al-1%Si
Power:9kw
Table rotation:10 rpm
Argon pressure:8 mTorr
Film thickness:1.04 microns
Deposition time:5.8 minutes
Step height: 1.10 microns
Step slope: 80o
Step coverage: 62% horizontal-to-vertical
Specularity: 65-75%
Resistivity: 2.85μΩ-cm
Grain size:2 microns
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

37. Typical Process Data-2 Delta Cathode Systems Material Al/1%Si
Al/1%Si/2%Cu
Al/4%Cu
DC Power
10 kw
Base Pressure
5X10-7 Torr
Pumpdown Time
3.5 min.
3.5 min
Argon Pressure
8X10-3 Torr
Table Rotation
2-5 rpm
Deposition Rate
2000 Å /min
Film Thickness
1.0 microns
Step Hight
Step Slop/Coverage
70o/70%
80o/60%
90o/50%
Specularity
70-75%
80-85%
90-95%
Resistivity
μΩ-cm
μΩ-cm
Grain Size
1-2μm μm μ
Film Hardness
(Annealed)
85kg/mm2
100kg/mm2
120kg/mm2
CV Shift
0.25V
0.15V
*Uniformity
+/-7%
* Typical results with Standard Delta Cathodes. Higher uniformity and throughput can be achieved with high performance Delta Cathodes and high throughput option. Throughput is process dependent and may vary depending on etch and pre-heat cycles.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

38. Other Optional Accessories and functions
RF Bias
Co-Sputter
Load Lock Radiant Heat (Up to 200C)
In Process Radiant Heat (Up to 350C)
Turbo Pump for Load Lock
Suitable is the best
Professionally provide advanced high-tech equipment suitable to customer preferences and needs
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

39. Suitable is the best Questionnaire
Questions
Feedback
Budget
Sputter Material, Sputter Rate, Sputter Uniformity and Quality of Film Spec.
Throughput
Wafer Size, Material, Shape
Target Cathode Amount, Type, Shape, Size
RF Etch Function
DC Power and RF Power capability
Process Gas and MFC range
Turbo Pump
Mechanical Pump
Typical Process Recipe
Special Requirements
Suitable is the best
Professionally provide advanced high-tech equipment suitable to customer preferences and needs

40. Contact Us Address:3521 Leonard Court ,Santa Clara,CA95054,U.S.A.
Telephone:
Fax:
Website:
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.