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1 ECE 556 Design Automation of Digital Systems By Prof. Charlie Chung-Ping Chen ECE Department UW-Madison.

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Presentation on theme: "1 ECE 556 Design Automation of Digital Systems By Prof. Charlie Chung-Ping Chen ECE Department UW-Madison."— Presentation transcript:

1 1 ECE 556 Design Automation of Digital Systems By Prof. Charlie Chung-Ping Chen ECE Department UW-Madison

2 2 Outline ä Microprocessor Technology Trends and Design Issues ä Interconnect delay trends ä Circuit type trends ä Research summary

3 3 Microprocessor Design Challenges ä High performance ( > 500 Mhz) ä Low cost (< $100) ä Low power consumption (< 10W mobile) ä More functionality (KNI MMX) ä Shorter time to market (< 18 months) ä Satisfies different market segments (server, sub- $1000) ä Competition ä …. Mission Impossible!

4 4 Tentative Class Schedule ä Technology Trends (1 class) ä Interconnect Modeling and Optimization: (1 week) ä basic routing: maze-routing ä wire-sizing, buffer-sizing, buffer-insertion ä Introduction to Verilog (1 week) ä Linear programming and Introduction to C and C++ language (1 week) ä Routing: (2 week) ä Clock routing (0.6 week) ä Global and channel routing, Tree routing (1.4 week) ä Timing Analysis (1 week) ä Delay Characterization, Power Characterization ä PERL and Latch based timing analysis ä Partitioning and Placement (1.5 week) ä Floorplanning (1 week)

5 5 Deal With It! ä Higher clock frequencies ä New processes: 0.18 micron, copper ä Architecture level ä Superscalar, super-pipeline, out-of-order execution, speculative execution, EPIC, VLIW, ILP, multi-thread ä Circuit level ä Aggressive dynamic circuits synthesis ä Sizing, parallel re-powering, logic minimization ä Physical Design ä Performance-driven place and route, floorplaning ä Wire-sizing, buffer-sizing, buffer-insertion

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12 12 Size of Team Explodes

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14 14 Process Overview ä New process (0.18 um) ä High aspect ratio ä Low sheet rho (resistance)  Low-  dielectric (capacitance) (3.55 vs. 4.10) ä Good Electromigration property ä 6 metal layers ä M1 tight pitch for density (X-cap) ä M2-M3 middle pitch for density & performance (X-cap) ä M4-M6 high pitch (low resistance) for performance (Inductance) ä Future ä Copper - Less resistance more inductance effect ä SOI - the M1 coupling strange

15 15 0.25 Micron, 5 Layer Technology IEDM 96

16 16 M6 M5 M4 M3 M2 M1 0.18 Micron, 6 Layer Technology IEDM 99

17 17 Gate Delay.v.s. Scaling IEDM 99

18 18 Interconnect Resistance Grows Super Linearly IEDM 99

19 19 Interconnect Delay Trend IEDM 99

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23 23 Interconnect Complicated Design Flow Architecture RTL Logic Gate Layout Over tens of iterations!

24 24 Signal Integrity A new design challenge CrossCap 1 2 Crosstalk

25 25 Inductance effect emerging ä An old clock tree ä Freq domain up to 1Ghz ä PVL and PRIMA with order 16 find the exact ä A newer ckt, a section of power grid ä Has L’s ä PVL and PRIMA with 60th order ä Frequencies more than 0.6 Ghz are not covered Frequency (Ghz)

26 26 7072747678 80 -550 -500 -450 -400 Multi-Point PRIMA-34 PRIMA-80 TIM PVL-80 Some MOR result

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29 29 Model order reduction ä We need efficient tools to analyze the interconnect dominant circuits (power grids, packages etc.) accurately in a reasonable amount of time  Promising Model Order Reduction (MOR) techniques Nonlinear Elements Linear Elements Nonlinear Elements Reduced Model

30 30 Power Consumption  P  C V 2 f, where ä C = Capacitance ~ Area ä V = Supply Voltage ä f = Operation Frequency

31 31 Power Trend

32 32 Supply Voltage Trends

33 33 Deal With It! ä Interconnect ä Wire- and Repeater- Sizing ä Repeater Insertion ä Performance-driven noise-aware routing ä New material: Low resistance (Cooper), Low k material (SiN2) ä Gates ä Gate Sizing ä New Circuit Exploration - Dynamic Circuit, Dual Vt ä ….

34 34 Standby Power Trend

35 35 Threshold Voltage v.s. Supply Voltage

36 36 Vt v.s. Delay

37 37 Dual Vt circuit High Vt Low Vt

38 38 Aggressive circuit styles

39 39 Clock delayed and Self-resetting dynamic circuits

40 40 Process limitations


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