1. 2009 Litho ITRS Spring Meeting
Lithography iTWG
March 2009
 Final Tables due date July 20

2. Lithography iTWG Litho iTWG Cross cut
Technologies: Near/Long 193nm / EUVL / ML2, Imprint and Others
Discussion (Near term 5 years  16nm !) “may be”
EUVL Single Exposure Solution Advantage
“22nm” Table LITH1 “Various Techniques…”
22nm Optical & 22nm EUVL
* This table does not include the demands of Flash because it will be a less difficult Lithographic Process
 Various Techniques for Achieving Desired CD Control and Overlay with Optical Projection Lithography for MPU and DRAM
Potential Solutions update
Note – At 32 nm EUV only applies to MPU/DRAM; 193 DP/MP at 16nm only applies to Flash
22nm EUV, 193 nm Immersion Double / Multiple Pattern, ML2, Imprint,
16nm EUV, 193 nm Immersion Multiple Pattern, ML2, Imprint, Interference Lithography, DSA
11nm EUV, ML2, Imprint, Interference Lithography, DSA
Tables:
MEEF on Mask CDU
LER/LWR Definition: (Gate/Wire/Contact via) Post development reduction & etch smoothing
Cross cut
ERM “More Photons” for scaling, MG function units bonding
Metrology Requirements from Litho TWG: *NGL/ML2 (+EUVL),
P/T 0.1, 0.2 discussion: Overlay capability 0.1, others 0.2, DP input from litho. TWG
Litho Requirements: Die-DB, Every wafer inspection
Yield Discuss: In-line Defect, Particle, EM, Haze/AMC
ESH: New material issues
M&S Near term,..

3. Attendance