1. 1Dp230 at 5:1 dilution in TAE with 12.5mM MgCl2 - on either mica or SiOn as shown below -apply 5ul 1dp230 10nM 1:5 dilution in TAE-Mg (final 2nM) to SiOn surface - used 50V as shown -get no load error while pipette tip with wire is in air -lower and dwell electrode tip loaded with TAE-Mg in drop of non-dia 1D p230 with buffer for 5 seconds -got consistent 25-40uAmp currents -drop blown off, blew in direction of green arrow while current still flowing -followed by rinse with water all rinses are blown along green arrow - rinses remove visible patina completely -mica application is traditional -5 mins, 2x30ul rinse and blow with inert gas -reanneal images involves same electrophoretically prepared SiOn surface rinsed, blown, imaged, rewetted with TAE-MgCl for 10 minutes, rerinsed and wicked dry (no blow) used standard 10ul pipette tip loaded with tae-mg buffer + - W wire Si wafer - piranah - ethanol - acetone cleaned steel disk with conductive tape to back of Si ammeter Si Properties (from ted pella web site): Orientation: Resistance: 1-30 Ohms (resistivity?) Type: P (Boron) (1 primary flat) No SiO2 top coating Wafer thickness: 18-21 mil (460-530µm) Wafer is polished on one side Before dicing they are rinsed in de-ionized water for cleaning

2. 1dp230 on mica 1dp230 on SiOn

3. 1dp230 on mica

4. 1dp230 on SiOn

5. 1dp230 on SiOn variations

6. 1dp230 on SiOn followed by reanneal with TAE-Mg