1. Thin Film Analysis by Ion Beam Techniques
W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim

2. Characteristics of MeV Ion Beam Analysis
Nondestructive
Absolute, quantitative
High sensitivity
Depth profiling in the first micron
Light element detection (ERDA, NRA, PIGE)
Ultra high sensitive isotope measurement
Versatile
External Beam available

3. RBS vs TOF-ERDA

4. Tandem Accelerator in KIGAM

5. Multipurpose chamber for RBS & TOF-ERD

6. Rutherford Backscattering Spectrometry (RBS)
Semiconductors
Superconductors
Optical films
Material science

7. TOF-ERDA
BN on Si

8. Electrolytic Li-Ni-V-O(H)/Si (1000 A)
RBS result
TOF-ERD result

9. Thick 600  1015 atoms/ cm2 (22.56 mg/cm2, ~ 440 A)
Element Areal density Atomic ratio Areal density Mass ratio
(1015 atoms/ cm2) (%) (mg/cm2) (%) H Li O Ar V Ni

10. Electrolytic Si-P-N-O-Li on Si (2000 A)
RBS result
TOF-ERD result

11. Thick 3500  1015 atoms/ cm2 (87.59 mg/cm2, ~ 1600 A)
Element Areal density Atomic ratio Areal density Mass ratio
(1015 atoms/ cm2) (%) (mg/cm2) (%) H Li C N O Si P Pt

12. Active layer of TFT and PDP display Ru on Si (300 A)
RBS result
TOF-ERD result

13. Thick 270  1015 atoms/ cm2 (42.27 mg/cm2, ~ 340 A)
Element Areal density Atomic ratio Areal density Mass ratio
(1015 atoms/ cm2) (%) (mg/cm2) (%) H C Ru

14. Dielectric layer of semiconductor Ru - O on Si (300 A)
RBS result
TOF-ERD result

15. Layer 1
Thick  1015 atoms/ cm2 (3.37 mg/cm2 , ~ 30 A)
Element Areal density Atomic ratio Mass density Mass ratio
(1015 atoms/ cm2) (%) (mg/cm2) (%) H C O Ru
Layer 2
Thick  1015 atoms/ cm2 (19.22 mg/cm2 , ~ 160 A) H C O Ru

16. Neutron generation target Ti-3H on Cu, 3H(p,n)3He
TOF-ERD result
(film composition)
RBS result (before H irradiation)

17. Temperature variation of target with H irradiation
RBS result (after H irradiation)

18. Areal density
of Ti (atom/cm2)
of 3H (atom/cm2)
Before irradiation
After irradiation
Cal. by neutron
cross section
Maker data
1.4 x 1019
4.6 x 1018
1.3 x 1019
3.8 x 1019
1.28 x 1019
x 1018
4.8 x 1018

19. Conclusion
RBS and TOF-ERD are mutually assistant in analysis from light elements
to heavy elements
Electrolytic films in which composition of light elements is important were
analyzed
It was found that Ru film can be a good dielectric film by introducing
small amount of oxygen
Nitrogen and oxygen were observed in a titanium tritide target and
the results reduced error of neutron cross section measurement
Cu migration during proton irradiation was also observed by RBS
measurement in spite of cooling by freon circulation
Ion beam analysis techniques are very successfully applied to
many fields of thin film studies