1. FACTORY LOT STATUS - MESA
Instructions:
Prior to each lab the current lot status is determined to provide information to the students on which lots they should be working on.
The students are divided into five different teams given the names of Red, Orange, Yellow, Green an Blue. (see page 5 of this document)
Each team works for three week in each of five different process areas. After the third week one of the students in the team give a pass down presentation summarizing what was done in the last three weeks (5 min. max)
Teams move to new process areas every three weeks so that be the end of the semester they all add experience in each of the five process areas.
The lot status itself is found by logging into MESA and doing lot status of all lots. (option 4 on the main menu)
The most recent lot status template is copied and pasted betweem page 5 and 6 of this document. Then changes are made to the most recent lot status page 2 to reflect the current lot status. Change, Date, Current Operation, Q or P, Step Number, Next Operation, Quantity of wafers, Comments. Also move the team color at the top of the template after each three weeks one spot clockwise.
Print two pages 2 and 3 only, two slides per page, one for each student.
Check equipment status (by talking to equipment engineers)
Review the lot status just prior to lab with the students and answer any questions they may have.

2. Rochester Institute of Technology Microelectronic Engineering
Dr. Lynn Fuller
Orange (Diffusion) Yellow (Lithography) Green (Plasma Etch) Blue (Implant/CVD) Red (wet Etch)
Date:
Lot Status Report
Time: 8:00 am
Lot No
Product
Process / Version
Current operation Q P
STEP
Next Operation
Qty
Comments
F150903
JOHN GALT
SUB-CMOS 150
TE01 X 77
TE02 3
ORANGE
F160218
ET15 75
ET07 2
F160922
ET26 61
BLUE
F170126
PH03 42
IM01
YELLOW
F170223
F171102 21
F180118 11
OX06
F180208 6
F180322
ET29 5
GREEN
RED – TEST working CMOS, NMOS ID-VDS, ID-VG, SUB-VT
ORANGE – TEST working pmos

3. SUB-CMOS 150 PROCESS 2-6-13 SUB-CMOS Versions 150 1. CL01
2. OX pad oxide, Tube 4
3. CV02- Si3N4-1500Å
4. PH03 –1- JG nwell
5. ET29 – Nitride Etch
6. IM01 – n-well
7. ET07 – Resist Strip
8. CL01
9. OX04 – well oxide, Tube 1
10. ET19 – Hot Phos Si3N4
11. IM01 – p-well
12. OX06 – well drive, Tube 1
13. ET06 - Oxide Etch
14. CL01
15. OX05 – pad oxide, Tube 4
16. CV02 – Si3N Å
17. PH03 – 2 – JG Active
18. ET29 – Nitride Etch
19. ET07 – Resist Strip
20. PH03 - -Pwell Stop
21. IM01- stop
22. ET07 Resist Strip
23. CL01
24. OX04 – field, Tube 1
25. ET19 – Hot Phos Si3N4
26. ET06 – Oxide Etch
27. OX04 – Kooi, Tube 1
28. IM01 – Blanket Vt
29. PH03 – 4-PMOS Vt Adjust
30. IM01 - Vt
31. ET07 – Resist Strip
32. ET06 – Oxide Etch
33. CL01
34. OX06 – gate, Tube 4
35. CV01 – Poly 5000A
36. IM01 - dope poly
37. OX08 – Anneal, Tube 3
38. DE01 – 4 pt Probe
39. PH03-5-JG poly
40. ET08 – Poly Etch
41. ET07 – Resist Strip
42. PH03 – 6 - n-LDD
43. IM01
44. ET07 – Resist Strip
45. PH03 – 7 - p-LDD
46. IM01
47. ET07 – Resist Strip
48. CL01
49. CV03 –TEOS, 5000A
50. ET10 - Spacer Etch
51. PH03 – 8 - N+D/S
52. IM01 – N+D/S
53. ET07 – Resist Strip
54. PH03 – 9 P+ D/S
55. IM01 – P+ D/S
56. ET07 – Resist Strip
57. CL01 Special - No HF Dip
58. OX08 – DS Anneal, Tube 2
59. CV03 – TEOS, 5000A
60. PH03 – 10 CC
61. ET26 - CC Etch
62. ET07 – Resist Strip
63. CL01 Special - Two HF Dips
64. ME01 – Metal 1 Dep
65. PH metal
66. ET15 – plasma Etch Al
67. ET07 Resist Strip
68. SI01 - Sinter
69. CV03 – TEOS- 5000Å
70. PH03 – VIA
71. ET26 – Via Etch
72. ET07 – Resist Strop
73. ME01 – Metal 2 Dep
74. PH03- M2
75. ET15 – plasma Etch Al
76. ET07 - Resist Strip
77. SEM1
78. TE01
79. TE02
80. TE03
81. TE04
2-6-13

4. ADV-CMOS 150 PROCESS (Revision 05-02-14)
ADV-CMOS Versions 150, Two level Metal
1. OX pad oxide 500 Å, Tube 4
2. CV Å Si3N4 Deposition
3. PH03 – level 1- STI
4. ET29 - etch Nitride
5. ET07 – ash
6. CL01 – RCA clean
7. OX04 – First Oxide Tube 1
8. ET06 – Etch Oxide
9. OX04 – 2nd Oxide Tube 1
10. ET19 – Etch Nitride
11. PH03 – level 2 - N-well
12. IM01 – 5E13, P31, 170 KeV
13. ET07 – ash
14. PH03 – level 3 - P-well
15. IM01 – 7E13, B11, 100 KeV
16. ET07 – ash
17. OX06 – Well Drive, Tube 1
18. PH03 – level 4 - N-well retrograde
19. IM01 – 9E13, P31, 70 KeV
20. ET07 - ash
21. PH03 – level 5 - P-well retrograde
22. IM01 – 1E14, B11, 45 KeV
23. ET07 – ash
24. ET06 – etch 500 Å pad oxide
25. CL01 – pre-gate oxide RCA clean
26. ET06 – etch native oxide
27. OX06 – 30 Å gate oxide, Tube 4
28. CV01 – poly deposition, 2500 Å
29. PH03 – level 6 - poly gate
30. ET08 – poly gate plasma etch
31. ET07 – ash
32. CL01 – RCA clean
33. OX05 – poly re-ox, 250 Å, Tube 4
34. PH03 – level 7 - p-LDD
35. IM01 – 9E14, BF2, 20 KeV
36. ET07 – ash
37. PH03 – level 8 - n-LDD
38. IM01 – 5E15, P31, 20 KeV
39. ET07 – ash
40. CL01 – RCA clean
41. CV02 – nitride spacer 2500Å
42. ET39 – sidewall spacer etch
43. PH03 – level 9 - N+D/S
44. IM01 – 1E15, P31, 25 KeV
45. ET07 – ash
46. PH03 – level 10 - P+ D/S
47. IM01 – 5E15 BF2, 27 KeV
48. ET07 – ash
49. CL01 – RCA clean
50. OX08 – DS Anneal, RTP
51. ET06 – Silicide pad ox etch
52. ME03 – HF dip & Ti Sputter
53. RT01 – RTP 5 sec, 650C
54. ET11 – Unreacted Ti Etch
55. RT02 – RTP 5 sec, 700C
56. CV03 – TEOS, P-5000, 3000Å
57. PH03 – level 11 - CC
58. ET06 – CC etch
59. ET07 – ash
60. CL01 – RCA clean
61. ME01 – Aluminum
62. PH03 – level 12-metal
63. ET15 – plasma Al Etch
64. ET07 – ash
65. CV03 – TEOS
66. PH03 – Via
67. ET26 Via Etch
68. ME01 Al Deposition
69. PH03 – Metal 2
70. ET07 - Ash
72. SI01 – sinter
73. SEM1
74. TE01
75. TE02
76. TE03
77. TE04
(Revision )
L = 0.5 m
VDD = 3.0 V
VTN = V
VTP = V

5. FACTORY TEAMS - THURSDAY
Red
Grou
1. Chakrakeerthi
2. Shreyas 3.
Orange
Group
1. Pooja
2. Timothy 3.
Yellow
Group
1. Rahnuma
2. Veena 3.
Green
Group
1. Venkatesh
2. Muhammad 3.
Blue
Group
1. Ky-El
2. Arshia 3.
Every two weeks groups shift discipline (to the right). For example the red group does Diffusion week 1&2, Red does Lithography week 3&4, Red does CVD/Plasma week 5&6, etc.
Discipline
Diffusion
Lithography
PVD/Plasma Etch
CVD/PECVD
Wet Etch/CMP
Bruce Furnace
AG-RTP
Blue M Oven
Nanospec
Spectromap
CDE Resistivity Map
Canon Stepper
SSI Track
CD Linewidth
Overlay
Branson Asher
CVC601
Drytech Quad
Lam490
Lam4600
Nanospec
Tencore P2
ASM 6”LPCVD
P-5000
Nanospec
Spectromap
Varian 350D
Al Wet Etch
BOE Etch
RCA Clean
Hot Phos Nitride Etch
BOE
Solvent Strip
CMP and CMP Clean
Nanospec
Surfscan
SEM
While in each discipline the students will
Process lots requiring steps in that discipline
Perform follow up Inspection and Metrology
Investigate and Update SPC data
Monitor non-device process metrics
Perform a “pass down” at the end of (2 weeks)
Track lots in and out of Mesa

6. Rochester Institute of Technology Microelectronic Engineering
Dr. Lynn Fuller
Orange (Diffusion) Yellow (Lithography) Green (Plasma Etch) Blue (Implant/CVD) Red (wet Etch)
Date:
Lot Status Report
Time: 8:00 am
Lot No
Product
Process / Version
Current operation Q P
STEP
Next Operation
Qty
Comments
F150903
JOHN GALT
SUB-CMOS 150
ET07 X 75
SEM1 3
ORANGE
F160218
ET15 2
F160922
ET26 61
BLUE
F170126
ET08 40
RED
F170223
GREEN
F171102
IM01 21
F180118 11
OX06
F180208 6
F180322
PH03 4
ET29
YELLOW
RED – Why is lot F in Process?