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Metrology for Nanomanufacturing

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Presentation on theme: "Metrology for Nanomanufacturing"— Presentation transcript:

1 Metrology for Nanomanufacturing
Vladimir A. Ukraintsev Texas Instruments, Inc.

2 Contributors: Christoph Wasshuber Bob Doering Mark Rodder
Allen Bowling Dennis Buss Hans Stork

3 Metrology means process control
After Jerry Schlesinger Cp with ideal metrology (P/T=0) Cp affected by metrology NB: Metrology is essential for manufacturing! TI/SiTD NNI Instrumentation & Metrology

4 NNI Instrumentation & Metrology
Current Needs IC with nm gates are in development Gate CD control range~ 3-4 nm (300 mm wafer!) Gate LER better than ~ 1 nm (1) Gate dielectric thickness control range ~ 0.1 nm Post STI CMP (pre-gate) topography ~ nm Total Measurement Uncertainty (TMU) ~ Range × 0.2 2004 challenges: High-resolution “in-die” 3D CD metrology with TMU < 1 nm (true bottom CD, line & trench profile, high frequency LER) Physical & electrical metrology of complex material stacks (concentration, porosity, interfacial defects, stress, mobility) TI/SiTD NNI Instrumentation & Metrology

5 NNI Instrumentation & Metrology
Future Needs Lack of robust & inexpensive manufacturing solution is often a show stopper for novel nanotechnology Assumptions: CMOS to be a primary IC technology for next years Patterning by lithography with elements of self-assembly Hybrid IC with elements of charge based nanodevices connected to the outside world through MOSFET Metrology needs: Non-destructive 3D tomography with atomic-resolution capable of CD metrology & elemental analysis High-resolution physical & electrical characterization of interfaces (composition, atomic structure, defects, traps, energy structure, charge, stress, mobility, etc.) TI/SiTD NNI Instrumentation & Metrology

6 NNI Instrumentation & Metrology
Challenges: Non-destructive “in-die” 3D microscopy with atomic resolution. Probe of atomic size is a challenge. Breakthrough is needed: novel SPM, X-ray scattering, e-holography, etc. Non-destructive single atom detection, chemical & electrical state characterization. Ultra high signal-to-noise detection is a challenge. Breakthrough in spectroscopy is needed: EDS, EELS, NMR, RBS, etc. TI/SiTD NNI Instrumentation & Metrology


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