1. Current spreading of III-nitride light-emitting diodes using plasma treatment Hsin-Ying Lee Ke-Hao Pan Chih-Chien Lin Yun-Chorng Chang Fu-Jen Kao Ching-Ting Lee

2. Outline  Introduction  Experiment  Results and Discussions  Conclusions  References

3. Introduction 大部分傳統 LED ，都會發生因電極關係，造成在電極下， 電子電洞複合所產生的光，都會因電極不透光，而造成在 電極下的光都會被遮住，使 LED 整體亮度下降很多。

4. sapphire MQW P-GaN N-GaN ITO P N 電極遮光 Refer sapphire MQW P-GaN N-GaN ITO P N CBL 光 Current Blocking Layer

5. Structures of (a)LED A with CF 4 +O 2 plasma treatment and (b)LED B without plasma treatment. Experiment 300 × 300μm 2

6. Current-voltage characteristics of Ni/Au contact with various plasma-treated n- type GaN. Results and Discussions

7. plasma treatment without plasma treatment Current-voltage characteristics of LED A and LED B.

8. Reverse current as a function of reverse voltage of LED A and LED B. plasma treatment without plasma treatment

9. plasma treatment without plasma treatment Light output power–current characteristics of LED A and LED B. about 16%

10. Far-field light emission distribution of (a) LED A and (b) LED B injected with pulse current of 200 mA pulse width=100 s and repetition frequency=1kHz.

11. Improvement in the Light Output Power of GaN- Based Light Emitting Diodes by Natural-Cluster Silicon Dioxide Nanoparticles as the Current Blocking Layer Chun-Fu Tsai Yan-Kuin Su Chun-Liang Lin

12. Schematic cross-sectional view of the epitaxial layers and GaN LED fabricated with SiO 2 nanoparticle CBL. 350 × 430μm 2

13. SEM images of (a) the morphology of p-GaN surface, (b)the SiO 2 nanoparticles with ~20nm diameter, (c) SiO 2 nanoparticles cluster naturally in p-GaN surface pits, and (d) CBL pattern formed on p-GaN with SiO 2 nanoparticles. CCD images of (a) fabricated chip with size 350 × 430μm 2, (b) the SiO 2 nanoparticles CBL beneath Cr/Pt/Au pad.

14. I-V and L-I characteristics of the reference and SiO 2 nanoparticles CBL LEDs. CBL-3.34V Ref -3.29V

15. about 15.7% Room temperature EL spectra of the reference and SiO 2 nanoparticle CBL LEDs at 20 mA dc injection current.

16. Conclusions 傳統 LED 製作 CBL ，可以有效的改變 LED 的電流路徑， 使其電流不通過 P 電極下方，可以有效的改善電極遮光的 問題，但在大電流操作下，容易造成電流聚集，使整體溫 度上升造成 LED 特性降低。