SU-8 Testing (v1b) Thin SU8 on glass slide Test Soft Bake (SB) and Post Exposure Bake (PEB)

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Presentation transcript:

SU-8 Testing (v1b) Thin SU8 on glass slide Test Soft Bake (SB) and Post Exposure Bake (PEB)

“Control” Recipe Spin Coating: 500rpm; 2000rpm – (expected thickness?) Soft Bake (SB): 93°C Exposure: 275 W PEB: 93°C Develop: 4min in SU8 developer SU8 developer rinse IPA rinse/Nitrogen Dry

1 st Set of Tests 4 samples; 8 devices/sample 4 Wells (W)+4 Blanks (B)/sample S1: “Control”: Misaligned (how?); All shorted; R(W) ~8.6Ω; R(B)~10Ω Test Parameters: SB (RT Evap for 30min) and Vary PEB 60°C? S2: 8min PEB: R(W)=(2.7±0.8)Ω; R(B)=11MΩ±0; C(B) = ?pF S3: 13min PEB: R(W)=(4.9±?)Ω; R(B=(5.6±7.7)MΩ; C(B)=? ±? S4: 15min PEB: R(W)=(3.8±1)Ω; R(B)=(11±0)MΩ; C(B)=? ±? Cracking patterns seen in S2, S3, S4

2 nd set of test samples Summary 4 samples 2 “Controls” Test Parameters: 1 min 93°C and Vary SB 60°C SB: 2.5 min SB: 5 min

2 nd Test Results “Control 1” S5 DeviceCapacitance(p F) Resistance(Ω)Type 129.4B 20.5W x10^6B 424W 524B 67W 7 421B 817W Summary: W: 4/4 Shorted B: 3/4 Shorted R(Well): (12.1 ± 10) Ω Excluding #3 R(Blank): (158± 230) Ω Blank Capacitance: 9.38 pF

“Control 2” S6 DeviceCapacitance(p F) Resistance(Ω)Type 1 Damaged (Too High Voltage) x10^6W x10^6B 3 Damaged (Too High Voltage) x10^5W x10^7B 5142W x10^7B 746W B Summary: W: 2/4 Shorted (2 Damaged by applying too high a voltage) B: 0/4 Shorted R(Well): (94± 68) Ω; C(Blank): (9.57± 0.5) pF

2.5min SB S7 DeviceCapacitance(p F) Resistance(Ω)Type 113.4W 2428B 310.8W 4294B 53.7W 65.7B 74.1W 811.6B Summary: All Shorted R(Blank): 184.8± 211Ω R(Well): 8± 4.9Ω

5min SB S8 DeviceCapacitance(p F) Resistance(Ω)Type 14.8W 216B 31.9W 444B 54.3W 6 Error?-B 7* W x10^6B Summary: W: 3/4 Shorted (why not 4/4?) B: 3/4 Shorted R(Blank): (30± 20)Ω (#8 excluded) R(Well): (3.7± 1.6) Ω 7*: Remeasured and same effect ignored in the average. Strange that there is a Capacitance and low Resistance, Remeasured C and still high

“Control 2” 20x

“Control 2” 100x

“Control1” 100x

2.5min SB 100x

5min SB 100x

S9 Back Contact Broken no Resistances Measured Capacitances W: 2/4 Shorted B: 1/4 Shorted Avg Capacitance Well: 19.3 ± 0.6pF DeviceCapacitance(p F) Resistance(Ω)Type 1W 2 B 312W 419B 5W 619B 7 W 820B

S10 DeviceCapacitance(p F) Resistance(Ω)Type 14.5W 218B 36.7W 4121B 53.9W 6127B 75W 8 118B Summary: W: 4/4 Shorted B: 4/4 Shorted Avg Well Resistance: 5.0± 1.2Ω Avg Blank Resistance: 96± 52Ω Double Exposed (16s)