ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Resist Materials Characterization Work in ExCITe W.-D. Domke; Infineon.

Slides:

Advertisements

Similar presentations

For(int i = 1; i

Advertisements

Dual Damascene using Step and Flash Imprint Lithography

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Introduction ExCITe Resist WP Leader: Infineon Wolf-Dieter Domke ExCITe/More.

14.1 Introduction Schematic & Perspective Representation of Polyethylene Molecule.

Double Exposure/Patterning Lithography Hongki Kang EE235 Mar

By Somnang Rom Epoxy Resins. Application of epoxy resins These are typical fiber winding machine “ Fundamentals of Composites Manufacturing”: Material,

BCAM 1 A Physically Based Model for Predicting Volume Shrinkage in Chemically Amplified Resists Nickhil Jakatdar, Junwei Bao, Costas Spanos University.

Quantitative Research Design

Polymer Synthesis CHEM 421 “Organic imaging materials: a view of the future” J. Phys. Org. Chem. 2000, 13, 767 “Advances in Patterning Materials for 193.

NANOSCALE LITHOGRAPHY MICHAEL JOHNSTON 4/13/2015.

Lithographic Processes

Infineon Technologies Dresden Advanced Data Processing Combining full IEP spectrum with an.

Page 1 NSF STC Polymers Used in Microelectronics and MEMs An Introduction to Lithography.

1 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Introduction More Moore, Resist Part for joint workshop of EUV Projects Medea+

Small-angle Scattering Study of Mohair Fibres Tjatji Tjebane Instrument Scientist (SANS) NECSA-Wits workshop, NVC, 2015/09/11.

Some “short term” medical applications of degradable polymeric biomaterials.

Proximity Effect in Electron Beam Lithography

E-Beam Lithography Antony D. Han Chem 750 U of Waterloo

Polymer Synthesis CHEM 421 Semiconductor Manufacturing.

Objectives To learn to identify the characteristics of a chemical reaction To learn the information given by a chemical equation =

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Resist Outgassing Work in ExCITe W.-D. Domke; Infineon ExCITe/More.

1 Thin Resist film Processing issues Ioannis Raptis Patterning Group Institute of Microelectronics National Center for Scientific Reasearch ‘Demokritos’

Section 7.2 Chemical Equations 1.To learn to identify the characteristics of a chemical reaction 2.To learn the information given by a chemical equation.

CHAIN POLYMERIZATION Free Radical Polymerization Free radical are independently-existing species that have unpaired electron. Normally they are highly.

Joint Excite – MoreMoore meeting on EUV Resist Technology Athens 12 May 2005.

TNO TPD TNO Science and Industry, 12 May Simulation of processing Influence of secondary electron statistics More Moore SP3WP6.4.

Developing Positive Negative Etching and Stripping Polymer Resist Thin Film Substrate Resist Exposing Radiation Figure 1.1. Schematic of positive and negative.

RADIATION DEGRADATION

Lithography and Electrodeposition

EXCITE Confidential / Slide 1 EUV resist screening & patterning EXCITE/ More Moore meeting May 2005.

© imec 2005 Line Edge Roughness: status of resist Excite/More Moore meeting 12 May 2005 L.A. Leunissen, A.M. Goethals, R. Gronheid, F. Van Roey.

1 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Outgassing Evaluation More Moore, SP3 WP6, for Task and Elettra.

Electron scattering in resist and substrate Proximity effect Resist interactions (positive /negative/chemically amplified resists, resist contrast) Dose.

1 Characterizing Molecular Weight Brazel & Rosen Ch. 5 Number average molecular weight: M n.

Chapter 4 Force System Resultant. The moment of a force about a point provides a measure of the tendency for rotation (sometimes called a torque). 4.1.

Taikan SUEHARA, ATF2 meeting, KEK, 2006/11/22 Status of fringe stabilization of Shintake-monitor Taikan SUEHARA The University of Tokyo.

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. The stages of the SU-8 process along with their interdependence and effect on final.

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. Schematic flow diagram of CER evaluation methodology as implemented on software.

1 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL EUV Resist Evaluation ExCite T406 and More Moore, SP3 WP6, Objective: Evaluation.

F 2 l a s e r (1 5 7 nm) l i t h o g r a p h y: m a t e r i a l s a nd p r o c e s s e s E. Tegou, E. Gogolides, P. Argitis, C. D. Diakoumakos, A. Tserepi,

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. The average protection level is shown with a solid line (averaged over y−z plane.

Task 4: Cement composites bulk thermal properties

Polymerization.

Dynamic mechanical analysis

AP Chemistry Unit 3 – Stoichiometry

Photolytic Polymerization

Ring Opening Metathesis Polymerization for 157 nm Photoresists

Balanced chemical reaction – same number of atoms of each element on either side of the arrow reactants – are on left side of the arrow; stuff being consumed.

BY SURAJ MENON S7,EEE,61.

Metrology-characterization and simulation

Computational Investigation of Retention of Star Shaped Polymers at the Chromatographic Critical Condition Yongmei Wang, Department of Chemistry, University.

Electron Beam Lithography (EBL) for High-Volume Manufacturing

Technical review August-2017 E-beam Lithography

THE MOLE You should be able to:

An Investigation of Chiral Recognition in Electrokinetic Chromatography by means of NMR Spectroscopy NMR spectroscopy was used to characterize the interactions.

الاحتراق.

Resist Resolution Enhancement and Line-end Shortening Simulation

Extreme Ultraviolet (EUV) Sources

Double Patterning Samuel Johnson 11/6/18.

Chemical Engineering for Micro/Nano Fabrication

Chemical Reactions CHAPTER 10

O2 O2 CH4 H2O CO2 H2O2 CH3OH O2 O2 CH4 H2O CO2 H2O2 CH3OH O2 O2 CH4

Resist Resolution Enhancement and Line-end Shortening Simulation

Resist modeling, Simulation and Line-End Shortening effects

Jan Genzer (Department of Chemical & Biomolecular Engineering)

Solvent-Temperature Superposition Rules for Predicting the Rheology of Wormlike Micellar Fluids Rajesh Khare, Department of Chemical Engineering, Texas.

Chemical Engineering for Micro/Nano Fabrication

Empirical and Molecular Formulas

Comparison of fluorescence spectra of cells expressing the FL-IFN-γR2/EBFP and FL-IFN-γR2/GFP chains in the presence and absence of the IFN-γR1 chain and.

IEUVI Resist TWG Meeting March 3, 2005 San Jose, California

Presentation transcript:

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Resist Materials Characterization Work in ExCITe W.-D. Domke; Infineon ExCITe/More Moore Meeting May 12, 2005 Athens, Greece

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Status & Plans of Infineon Materials Characterization Bulk EUV litho characterization of relevant resist platforms done model resist formulation (outgassing, scissioning,..) on hold characterization of polymer side reactions finished and reported –correlation of chain scissioning and outgassing in EUV Open frame tool TEUVL available; further plans to be determined

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ WP 1: EUV Resist Technology Open Frame Exposures Bulk Litho Characterization of main Resist Classes done (M1.1.5 & M1.1.7): Most investigated chemical platforms are viable for EUV patterning, no clear advantage could be found for either 193nm or 248nm type resists/polymers. Pilot EUV samples (Clariant EXC20 & EXC21; M1.1.6) are available Resolution down to 40nm shown with EUV Interference Lithography

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ WP 1: EUV Resist Technology Polymer side reactions J J CH3J CF3 C6H6 C4H8 C4H3 C2H5O CO2 C3H7 CO / C2H4 acrylic resist (ACR-MA) COMA-Si resist ESCAP Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists EUV dose molecular weight ESCAP acrylic POSS Polymers with high tendency to chain scissioning show the most outgassing

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ acrylic model resists show more chain scissioning in EUV compared to even 157nm. ESCAP resist shows dose- dependent scissioning / crosslinking behavior 3rd Int. EUV Symp, Miyazaki & SPIE 2005, San Jose acrylic model resists show more chain scissioning in EUV compared to even 157nm. ESCAP resist shows dose- dependent scissioning / crosslinking behavior 3rd Int. EUV Symp, Miyazaki & SPIE 2005, San Jose WP 1: EUV Resist Technology Polymer side reactions Quantitation of total outgassing [molecules/cm2 sec]