1. EXCITE Confidential / Slide 1 EUV resist screening & patterning EXCITE/ More Moore meeting May 2005

2. EXCITE Confidential / Slide 2 Outline l Resist selection for Alpha tool Q3 2005, criteria: l Resist outgassing l specifications for Alpha Demo tool l Imaging l Resist screening at MET tools l 50nm Iso & Dense lines, Resolution l Special interest in high flare conditions l Modeling

3. EXCITE Confidential / Slide 3 Resist outgassing l Resist outgas specifications for Alpha tool: l H 2 0 4.7E15 (molec/s*cm 2 ) l C x H y (integr. > 44 AMU) 4.7E13 l F/Cl/I 4.7E14 l S/P 4.7E11 l Si 4.7E9 l PAG fragments (S/P) most critical

4. EXCITE Confidential / Slide 4 Flare Background l Flare increases with amount of mirrors l MET PO has 2 mirrors l Flare level ~7% for 500 nm isolated lines (ALS) l But effective flare level higher l In Focus Exposure Matrix (due to neighboroughing dies) ~12% was estimated in case of 100  m die spacing l for smaller isolated lines l Alpha tool PO has 6 mirrors l Higher flare levels are expected, impacting: l Process window size l Resist profiles l Iso-dense bias/ Proximity curves

5. EXCITE Confidential / Slide 5 Process window – 50nm isolated lines (MET) F=-300 -250 -200 -150 -100 -50 +0nm Filtered: EL~14%, DoF~300nm

6. EXCITE Confidential / Slide 6 Extra flare wafer – 50nm IL Reference [12%]+5% [17%] +10% [22%]+15% [27%] ~9% EL ~11% EL ~5% EL

7. EXCITE Confidential / Slide 7 modeled 50nm dense lines (Prolith) Experimental EL ~16% (Bright) ~21% (Dark) DoF ~300nm