Corial 300

COSMA Software with:  Edit menu for process recipe edition,  Adjust menu for process optimizing,  Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network). CORS Software for:  Data reprocessing (Measures and data comparison). Equipment Control & Software

A Tool Organized in Successive Levels Actions Constructor LotsActions Process Closed-loop Server for GUI COSMA Supervisor Embedded control PU Embedded control function COSMA Controller Process Controller Device Controllers Physical devices Operator Remote GUI PC User Monitoring Monitoring Monitoring

Diagram Modes Diagram Modes Stand-byMode Step by step Mode ProductionMode OptimizationMode ConstructorMode Shut down Mode Normal Errors Operator Production Maintenance Constructor

A Communicant Tool COSMA Supervisor COSMAGUI Customer Ethernet Network Process Control Unit (1) Process Control Unit (2) Device Control (1) Ethernet Device Control (2) Ethernet WANVPNADSL Fix IP Firewall Dedicated Ethernet network

Pumping System TMP TV Reactor Dry Pump ADP 122

RIE Reactor Automatic Match Box RF Generator Pumping grid Bottom Electrode Pump

New RIE designed to achieve highly uniform delayering for  300 mm wafer yield analysis:  Symmetrical reactor design to reduce ion bombardment on the powered electrode (cathode),  Etching with thick insulator on the cathode to reduce ion bombardment. Real time access to the following plasma modes:  High Pressure Reactive Ion Etching (Isotropic),  Low Pressure Reactive Ion Etching (Anisotropic). Reactor Features

ProcessUnderlayer Etch Rate (nm/min)Selectivity PolyimideSi3N4SiO2Si3N4SiO2SiO2> Some Process Specifications Uniformity ±5%±5%±3%

The latest submicron technology needs precise delayering:  Automatic endpoint detection,  CCD camera with magnification > 120 X,  Laser beam diameter ≤ 20  m. Preventing Overetch A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

Interferences lead to a periodic signal having a /2n period versus time Interferences Photodiode Laser Endpoint Detection Reflected beam 1 Interface 1 Underlayer Interface 2 Refractive Index = n Time Signal Laser beam Reflected beam 2

Laser Endpoint Detection Al Si3N4 SiO2 Si Laser beam Al SiO2 Si Laser beam Al SiO2 Si Al reflects the laser, there is no interference effect.

 New RIE reactor to achieve highly uniform delayering for  300 mm wafer yield analysis,  Wide process range from isotropic to anisotropic,  Clean etching,  Low metal erosion (low damage). Recap of Corial 300 Features