2. Large capacity batch system for 24/7 production environment
Corial D500
11/7/2018
Large capacity batch system for 24/7 production environment
High-quality films for a wide range of materials, incl. SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films
Film deposition from 120°C up to 325°C. Optional low-temperature chamber for film deposition at 20°C
Large batch loading capacity (104 X 2”, 25 X 4”, 9 X 6”, 4 X 8” wafers, or large format substrates
Corial D500

3. System description Corial D500

4. Corial D500 COMPACT FOOTPRINT System description General View
11/7/2018
General View
700
2035
1340
920
960
390
600
COMPACT
FOOTPRINT
Corial D500
Corial D500

5. System description PECVD reactor Pumping system TMP controller
11/7/2018
Detailed View
PECVD reactor
Pumping system
(TMP 500l/s and dry pump 560 m3/h)
TMP controller
Heating controller
HV and LV power supplies
3000 W RF generator
Process controller
Corial D500

6. System description PECVD reactor Heating station Pumping system
11/7/2018
Detailed View
PECVD reactor
Heating station
Pumping system
(TMP 500l/s and dry pump 560 m3/h)
Cooling station
TMP controller
Heating controller
HV and LV power supplies
3000 W RF generator
Process controller
Corial D500

7. AVOID HANDLING DAMAGE TO THE WAFERS
System description
11/7/2018
Mechanically Assisted Loading
SAFE OPERATION
AVOID HANDLING DAMAGE TO THE WAFERS
6 MIN
PRE-HEATING TIME IN DEDICATED STATION FOR FASTER SHUTTLE HEATING IN REACTOR
5 MIN
HEATING TIME IN REACTOR TO REACH 280°C
5 MIN
COOLING TIME IN DEDICATED STATION AFTER PROCESSING TO REACH <70°C SUBSTRATE TEMPERATURE
Corial D500

8. HEATING TIME IN REACTOR TO REACH 280°C
System description
11/7/2018
Mechanically Assisted Loading
6 MIN
PRE-HEATING TIME IN DEDICATED STATION FOR FASTER SHUTTLE HEATING IN REACTOR
5 MIN
COOLING TIME IN DEDICATED STATION AFTER PROCESSING TO REACH <70°C SUBSTRATE TEMPERATURE
5 MIN
HEATING TIME IN REACTOR TO REACH 280°C
Corial D500

9. PECVD reactor Corial D500

10. RAPID AND UNIFORM DEPOSITION
Pecvd reactor
11/7/2018
Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity
Pressurized reactor ensures high-quality films free of pinholes
Optimized gas showerhead and symmetrical pumping deliver excellent deposition uniformity
High temperature, dual pumped configuration enables efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts
Optimizing film stress control is simple to accomplish thanks to the reactor’s symmetrical design
System can operate for years without the need for manual cleaning
RAPID AND UNIFORM DEPOSITION
Corial D500

11. 0.2 TO 2 T ≤ 65°C 20 TO 150°C 120 TO 325°C Pecvd reactor
11/7/2018
Flexibility
20 TO 150°C
TEMPERATURE RANGE
120 TO 325°C
TEMPERATURE RANGE
0.2 TO 2 T
PRESSURE RANGE
≤ 65°C
VACCUM VESSEL WALLS
Corial D500

12. 1 PECVD reactor Operation Sequence Cathode (Gas shower)
11/7/2018
Operation Sequence
Substrate Holder
Lift
Vacuum
Chamber
Cathode (Gas shower) 1
Corial D500

13. 2 PECVD reactor Operation Sequence Cathode (Gas shower)
11/7/2018
Operation Sequence
Lift
Substrate Holder
Cathode (Gas shower)
Vacuum
Chamber
Compressed Air
TMP 2
Corial D500

14. 3 PECVD reactor Substrate Holder Match Box RF Generator 13.56 MHz
11/7/2018
Compressed Air
Lift
Substrate Holder
Heating cable
TMP
Infra-red reflectors
Vacuum
Chamber
Match Box
RF Generator
13.56 MHz
Cathode (Gas shower)
Process Pump
PLASMA
Laser interferometer
Gas Inlet
Operation Sequence 3
Corial D500

15. Pecvd reactor Standard PECVD CORIAL Pressurized Reactor Cold walls
11/7/2018
Standard vs. Pressurized Reactor
Standard PECVD
TMP
PLASMA
Cold walls
300°C
CORIAL Pressurized Reactor P2 P1
Roots
Outgasing from the cold walls leads to
film contamination
P1 >> P2 leads to
NO film contamination
(H2O is pumped away by TMP)
H2O
Corial D500

16. Pecvd reactor
11/7/2018
Improved Film Quality
Very low concentration of O and C atoms in aSi-H films deposited in Pressurized Plasma Reactor
1018 C atoms/cm3
1018 O atoms/cm3
C atoms/cm3
OXYGEN CONTAMINATION REDUCED BY 50 IN aSi-H FILM
CARBON CONTAMINATION REDUCED BY 5 IN aSi-H FILM
Corial D500

17. EXCELLENT DEPOSITION UNIFORMITY
Pecvd reactor
11/7/2018
Symmetrical Pumping
EXCELLENT DEPOSITION UNIFORMITY
Vertical pipe
Gas inlet
Process pump
High pumping ring
Low pumping ring
SiO2 uniformity
< ±2 %
On 8’’ wafer
Corial D500

18. e∙Vp + Initial energy of positive ions
Pecvd reactor
11/7/2018
Symmetrical Design
When an RF electric field is applied, the plasma potential adjusts itself until it is clamped on the positive portion of RF voltage (At the nearest floating potential (Vf)). The plasma potential is always higher than the highest potential of any surface in contact with the plasma
The mean plasma potential ( Vp ) and the self bias voltage (VDC) accelerate the positive ions and give them a high kinetic energy. In case of pressurized reactor the VDC is zero.
Ion energy is equal to
e∙Vp + Initial energy of positive ions
Cathode area =
Anode area
Self bias voltage (-VDC).
Zero bias in case of CORIAL reactor
Mean plasma potential (Vp)
Corial D500

19. Anode area >> Cathode area Anode area = Cathode area
Pecvd reactor
11/7/2018
Symmetrical Design
Standard PECVD
CORIAL Pressurized Reactor
Cathode
(13.56 MHz)
Anode
Anode area >> Cathode area
Self bias voltage on cathode (VDC) >> 100 V
Mean plasma potential = (VRF – VDC)/2 (≈ few Volts)
Low energy ion bombardment on wafers sitting on the anode (ground)
Anode area = Cathode area
Self bias voltage on cathode (VDC) = 0V
Mean plasma potential = VRF / 2 (Few hundred volts)
High energy ion bombardment on wafers sitting on anode
Corial D500

20. Double frequency system required for stress control
Pecvd reactor
11/7/2018
Stress Control
CORIAL Pressurized Reactor
Standard PECVD
PRECISE AND SIMPLE STRESS CONTROL
Double frequency system required for stress control
13.56 MHz for compressive stress
100 to 400 KHz for stress control
Single frequency convenient for stress control
13.56 MHz for compressive & tensile stress
Corial D500

21. Stress controlled by RF power, Ar flow rate and gas mixture
Pecvd reactor
11/7/2018
Stress Control
Stress controlled by RF power, Ar flow rate and gas mixture
SixNy with tunable stress
SiO2 with tunable stress
SiC with tunable stress
Corial D500

22. Performances PECVD processes corial D500

23. Layer specifications MEMS SixNy with tunable stress
11/7/2018
MEMS
SixNy with tunable stress
SiO2 with tunable stress
SiO2 with breakdown voltage
> 10 MV/cm
Si3N4 with low KOH etch rate
SiO2 with low BOE etch rate
Corial D500

24. Layer specificaTions III-V Compounds, Optoelectronics
11/7/2018
III-V Compounds, Optoelectronics
Low SiO2 BOE etch rate
SiO2 with tunable stress
Si3N4 with low KOH etch rate
DRIE of glass
Low damaged after annealing
SiC tunable stress
Corial D500

25. Layer specifications Step coverage by SiH4 + N2O deposition
11/7/2018
Step coverage by
SiH4 + N2O deposition
Step coverage by
HMDSO + O2 deposition
Self-planarized
Deposition of SiOF
Corial D500

26. Measurement performed with 5 mm edge exclusion
High deposition rates
11/7/2018
Excellent Uniformities
Process
Deposition Rate
(nm/min)
Refractive Index
Stress
(MPa)
Uniformity
on 8” Wafers
SiOx
20 to 500 *
1.458 to 1.478
-300 to +50
< ± 3%
SixNy
20 to 250 *
1.8 to 2.1
-300 to +150
SiOF
> 50
1.41 ± 0.02
-100 to -0
SiOCH
50 to 200
1.45 ± 0.02
-100 to -20
SixC
20 to 150
2.6 to 2.9
-100 to +100
* Configuration-dependent
Measurement performed with 5 mm edge exclusion
Corial D500

27. Throughput calculations for 0,25 µm deposition of SiO2
High throughput
11/7/2018
Large Capacity Batch System
Throughput calculations for 0,25 µm deposition of SiO2
Configuration
Deposition Time
(min)
Loading Time
Cleaning Time
Throughput
(Wafer/month)
104 x 2’’ 5 12 64
> 200,000
25 x 4’’
> 50,000
9 x 6’’
> 18,000
5 x 8’’
> 10,000
Plasma cleaning when 5 µm of SiO2 are deposited
Corial D500

28. Throughput calculations for 2 µm deposition of SiO2
High throughput
11/7/2018
Large Capacity Batch System
Throughput calculations for 2 µm deposition of SiO2
Configuration
Deposition Time
(min)
Loading Time
Cleaning Time
Throughput
(Wafer/month)
104 x 2’’ 18 12 74
> 78,000
25 x 4’’
> 18,000
9 x 6’’
> 6,700
5 x 8’’
> 3,700
Plasma cleaning when 6 µm of SiO2 are deposited
Corial D500

29. cleaning corial D500

30. The 560x560 mm deposition system which never requires mechanical cleaning of reactor or vacuum vessel for many years of operation

31. Reactor plasma cleaning
11/7/2018
For Particle Free Processes
HIGH UPTIME
Pressurized
Reactor Design
Automatic
EPD of reactor plasma cleaning process
In situ
Reactor plasma cleaning
NO MECHANICAL CLEANING
Corial D500

32. 1 Pecvd reactor Closed gate valve Roots In Situ Cleaning Sequence
11/7/2018
In Situ Cleaning Sequence 1
Roots
Closed gate valve
Corial D500

33. 2 Pecvd reactor Send N2 SF6 Gas Inlet N2 leaks Closed gate valve
11/7/2018
In Situ Cleaning Sequence
Closed gate valve
Send N2 P2 P1
SF6
Gas Inlet
N2 leaks 2
P1 << P2
Roots
Corial D500

34. 3 Pecvd reactor Send N2 SF6 Gas Inlet N2 leaks Walls at 300°C
11/7/2018
In Situ Cleaning Sequence
Closed gate valve
Send N2 P2 P1
SF6
Gas Inlet
N2 leaks
Walls at 300°C
PLASMA
P1 << P2
NO fluorine atoms in the vacuum vessel
NO corrosion 3
Walls at 300°C leads to efficient plasma cleaning and, thereby, minimum particle contamination
SiH4 stopped while plasma still ON
NO pin holes
Corial D500

35. usability corial D500

36. Process control software
11/7/2018
COSMA
COSMA
CORIAL OPERATING SYSTEM FOR MACHINE
The simplest, most efficient software to develop processes, operate, and maintain CORIAL systems
DESKTOP APPLICATION
Process Editing I Process Adjustment I Process Operation I Process Tracability I System Maintenance
REMOTE CONTROL
Corial D250 / D250L

37. Reprocessing software
11/7/2018
COSMA RS
DISPLAY UP TO 4
PARAMETERS FROM A RUN
Simple and efficient software to analyze process runs and accelerate process development
REMOTE
ANALYSIS OF RUNS
DRAG AND DROP
CURVES TO CHECK PROCESS REPEATABILITY
Corial D500

38. Large capacity batch system for 24/7 production environment
Corial D500
11/7/2018
Large capacity batch system for 24/7 production environment
High-quality films for a wide range of materials, incl. SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films
Film deposition from 120°C up to 325°C. Optional low-temperature chamber for film deposition at 20°C
Large batch loading capacity (104 X 2”, 25 X 4”, 9 X 6”, 4 X 8” wafers, or large format substrates
Corial D500