1. For High Quality Film Deposition
Corial D250
A PECVD Equipment
For High Quality Film Deposition

2. Equipment Control & Software
COSMA Software with:
Edit menu for process recipe edition,
Adjust menu for process optimizing,
Maintenance menus for complete equipment control and service via internet with VPN (Virtual Private Network).
CORS Software for:
Data reprocessing (Measures and data comparison).

3. A Tool Organized in Successive Levels
Actions
Constructor
Lots
Process
Closed-loop
Server for GUI
COSMA Supervisor
Embedded control PU
Embedded control function
COSMA Controller
Process Controller
Device Controllers
Physical devices
Operator
Remote GUI
PC User
Monitoring

4. Diagram Modes Stand-by Mode Production Optimization Constructor
Errors
Stand-by
Mode
Step by step
Production
Optimization
Constructor
Shut down
Operator
Production
Normal
Maintenance
Constructor

5. A Communicant Tool Firewall WAN VPN ADSL Fix IP Dedicated
Ethernet network
COSMA Supervisor
COSMA
GUI
Customer Ethernet Network
Process Control Unit (1)
Process Control Unit (2)
Device Control (1)
Ethernet
Device Control (2)

6. System Match Box Reactor TMP Shuttle Lift Gas Box TMP Control
RF Generator
TMP Control
Reactor
TMP
Gas Box

7. System Match Box Gate valve Process pumping port Lift TMP
Electronic control
Process pumping port
Lift
Gate valve
Match Box
Gas box
TMP

8. Principle of PECVD Reactor
Vacuum Chamber
Cathode (Gas inlet)
Shuttle
Compressed
Air
Lift
TMP

9. Principle of PECVD Reactor
Vacuum Chamber
Cathode (Gas inlet)
Compressed
Air
Lift
Shuttle
TMP

10. Principle of PECVD Reactor
Vacuum Chamber
Cathode (Gas inlet)
Infra-red reflectors
Heating cable
Shuttle
Lift
Process
pump
Compressed
Air
TMP

11. Principle of PECVD Reactor
Laser Interferometer
Vacuum Chamber
Cathode (Gas inlet)
Process
pump RF
Match
P L A S M A
Infra-red reflectors
Heating cable
Shuttle
Lift
Compressed
Air
TMP

12. PUMPING PRINCIPLE of PLASMA REACTOR
Gas inlet
Pumping
ring
Vertical
pipes
Low half pumping
ring
Process pump

13. Symetricalreactor for low stress deposition
Process
pump
Shuttle Down
Shuttle Up
Symetricalreactor for low stress deposition
Pumping
pipe

14. Reactor Lift Shuttle in Up position Shuttle in Down position
Penning gauge
Process
pump
Lift

15. Lift
Process
pump
Symetrical
pumping
Reactor

16. Outgasing from the cold walls leads to film contamination
REACTOR PRINCIPLE
Outgasing from the cold walls leads to film contamination
Cold walls
PLASMA
300°C
Standard PECVD
TMP
Cathode
Anode
Pressurized reactor P2
PLASMA
Roots
TMP P1
P1 >> P2
No film contamination

17. CLEANING PRINCIPLE
Walls at 300°C
Close gate valve
Roots
TMP

18. CLEANING PRINCIPLE Send N2 Gas inlet P1 P2 Leaks Gate valve closed
N2 goes in process chamber through the leaks
Leaks
Send N2
Gate valve closed
Roots
TMP
P2 >> P1

19. CLEANING PRINCIPLE Send N2 No corrosion of vacuum vessel. TMP
Gate valve closed
Roots P2
Gas inlet P1
P2 >> P1
300°C
No fluorine atoms can go in the process chamber.
No corrosion of vacuum vessel.

20. Monitoring Deposition
The latest submicron technology needs precise monitoring:
Automatic endpoint detection,
CCD camera with magnification = 50 X,
Laser beam diameter ≤ 50 m.
A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

21. BENEFITS In situ monitoring of deposition rate
Precise thickness of deposited layers
The plasma confined in a uniformly heated process chamber
Excellent uniformities in thickness and refractive index.
Symetrical design of the process chamber
Stress control of films.
In situ plasma cleaning with no corrosion of the process chamber.
No memory effect
No mechanical cleaning

22. Guaranteed Process Results
Process Development
Development is carried out through Design of Experiments (DOE)
Optimisation of film properties:
deposition rate,
refractive index,
uniformities (Thickness, Index),
KOH, TMAH, etch rates,
stress,
breakdown voltage.
Customer Benefit
Process modelization enables fast matching with customer requirements.
Guaranteed Process Results

23. Guaranteed Process Results
Some Process Specifications
Deposition process
Deposition rate
(nm/min)
Etch rate in
KOH (Si3N4)
BOE (SiO2)
Compres-sive stress
(MPa)
Breakdown voltage
(MV/cm)
Refractive index uniformity
Deposition Uniformity
Si3N4
120
<10 nm/h
-150 /
±0,2%
±2%
SiO2
400
-100
±0,05%
150
260 nm/min
-30 10
Guaranteed Process Results

24. Si3N4 Refractive Index Refractive Index Versus SiH4 and NH3 Flow Rates

25. Si3N4 Film Properties Stress Versus SiH4 and NH3 Flow Rates
Stress = -100 MPa
KOH Rate = 50 Å/h
KOH Etch Rate Versus SiH4 and NH3

26. Stress Versus SiH4 and NH3 Flow Rates
Si3N4 Film Stress
Stress Versus SiH4 and NH3 Flow Rates
Zero stress area

27. Refractive Index and RI uniformity versus pressure and N20 flow rate
SiO2 Refractive Index
Refractive Index and RI uniformity versus pressure and N20 flow rate
Refractive Index = ±
RI uniformity = ±

28. SiO2 Film Properties Stress Versus Pressures and N2O Flow Rate
Stress = - 50 MPa
BOE Rate < 250 nm/min
BOE Etch Rate Versus Pressure and N2O

29. SiO2 Breakdown Voltage Breakdown Voltage Versus Pressure and SiH4
= 10 MV/cm

30. Guaranteed Process Results
Process Performance
Multi-step process recipes enables perfect and stable plasma ignition.
This gives rise to:
Repetitive film growth,
Good adhesion of films on substrate,
Stable film properties.
Process is terminated by an Ar or He plasma in order to scavenge the powders electrostatically trapped in the plasma.
This gives rise rise to:
No contamination of deposited films,
Shorter plasma cleaning,
No pinhole.
Guaranteed Process Results

31. Corial D250 Description Deposition chamber, including:
Vacuum vessel,
Pressurized isothermal plasma reactor,
Uniform heating with two heating cables
Temperature control of plasma reactor with Eurotherm 2408 and computor interface,
Infra-red reflectors.
Electronic control, including:
Physical device controllers with embedded software running on Celeron 400 MHz, 128 Mo DRAM and fast ethernet,
Process controller with PC running at 1.3 GHz, 512 Mo DRAM, fast ethernet communication and 80 Go hard disk.
Pumping system with:
Alcatel dry pump ADP 122P (95 m3/h),
Alcatel turbo pump ATH 31 C (30 l/s),
Valves, Penning and two capacitance gauges,
Pressure control with N2 MFC,
N2 venting line.
COSMA control software operating under Linux with Edit, Optimize, process Run and Maintenance menus.
PC operating under Windows with:
Intel Pentium processor and 512 Mo RAM,
17” LCD colour monitor,
Firewall and VPN.
Gas box equipped with 6 gas lines with Horiba MFCs and electropneumatic valves for SiH4, N20, NH3, N2, He and SF6 gases.
300 W RF generator and automatic match box from ENI.

32. Corial PECVD Features Very high quality of deposited films:
Tunable refractive index
Low etch rates in BOE and KOH
High breakdown voltage
No pinholes
Excellent uniformities (thickness & refractive index)
Stress control of films from tensile to compressive
Efficient in situ plasma cleaning with NO corrosion of vacuum vessel, NO memory effect and NO manual cleaning required.