ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Resist Outgassing Work in ExCITe W.-D. Domke; Infineon ExCITe/More Moore Meeting May 12, 2005 Athens, Greece

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Synchrotrone Trieste – EUV outgassing setup Legend: M - main chamber P - photodiode Q - quadrupole mass spectrometer S - sample ion pump turbomolecular pump diaphragm pump inverted magnetron gauge valve Q beam M P 30º S Q 60º EUV beam incidence on resist on silicon samples was at an angle of 30 ° quadrupole mass spectrometer was located at 60°, distance from wafer was 15 mm. chamber volume is 3.1 liter EUV outgassing is sampled at different spots of a coated wafer to allow fast mass spectrometer scanning (10 amu channels per exposure); spot size was 2.5 x 0.5 mm

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Measurement of EUV total outgassing Total outgassing pressure (10 -9 mbar) is integrated over a total exposure time of 2 min. total outgassing of different resist samples varied by 3 orders of magnitude; low outgassing resists resulting in molecules/cm 2 sec

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Evaluation of mass spectra  Samples are exposed for 120 sec  10 mass channels are measured simultaneously  time-dependent mass signals are evaluated per peak value or per integral  mass spectra are then reconstructed from all available channels

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ EUV fragments comparison J J CH3J CF3 C6H6 C4H8 C4H3 C2H5O CO2 C3H7 CO / C2H4 acrylic round robin ESCAP One order of magnitude less is the outgassing of PAG fragments and polymer chain fragments Another order of magnitude less is the outgasssing of iodine-containing fragments from the PAG The highest outgassing fragments are deblocking group fragments and CO2

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Advantages/Disadvantages Easy Online Setup high EUV power only in-band (13.4nm) radiation  only few synchrotron exposure slots available high time consumption of total evaluation not sensitive enough for low-outgassing materials Remark: some tool supplier (ASML, Nikon) set very different outgassing requirements

ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/ Status and Plan for Infineon Outgassing Work Good cooperation with Elettra/Synchrotrone Trieste for EUV Outgassing Work Experimental setup refined and screening of some resist classes done Impact of fine-tuning resist formulation (PAG, quencher) on outgassing under evaluation Comparison of Outgassing Methodology done in IEUVI Resist TWG Plans for IEUVI-initiated round robin experiments