Annual Meeting WP2- Sensors Heinz Pernegger / CERN 20 November 2013

Sensors Brief update to sensor related work currently in progress by TALENT fellows – Planar Sensors – 3D sensors – CVD diamonds – CMOS sensors TALENT Midterm Review

Planar Sensors / CiS Arno Developed and processed multi-chip sensors in view of Phase 2 upgrade Next steps -> flip chip with FEI4 to do sensor functional tests Move to 6 inch processing TALENT Midterm Review

CiS planar sensor layouts TALENT Midterm Review Different sensor designs for present and future of ATLAS Comparison between different sensor sizes

CiS - 4“ imminent production Testing of LDI (Laser Direct Imaging, maskless) for implant and oxide layers 1 batch (9 wafers ) with no changes to layout 1 batch (5 wafers, 4 wafers ) with partial minimisation of implant and oxide layers Slide 5 [µm]

CiS FE-I4 SC with bias grid variants Slide 6 Bias Grid/Dot Variations Var. 1: bias dots unchanged, grid per column Var. 2: bias dots unchanged, grid at pixel center Var. 3: bias dots and grid at pixel center

CiS - FE-I4 SC variations overview Slide 7 Additional testing of variations of Bias dot implant diameter Pixel implant width Pixel size 250 x 25 µm 2 Only half of the pixels are read out 2 different bias grid layouts

3D detectors Sonia & Laura Focus on characterization of recently produced sensors by CNM, FBK and Sintef Main focus of sensor measurements is IV behavior and breakdown voltage of devices – Time-stability of current measurements – Correlation guard ring current vs active area current – Shift of breakdown voltage vs different conditions TALENT Midterm Review

3D – Oslo/Sintef TALENT Midterm Review Voltage (V) Current (-A) Measurements by Laura Study IV characteristics after different sensor treatments Current (-A)Voltage (V) How they should look C16_CMS_1_81 After Baking

3D – Cern/CNM/IFAE Measurements by Sonia Correlate IV measured on guard ring to full active area Monitor IV behavior all through the assembly process of modules TALENT Midterm Review

3D continued Use UBM processed sensors to contact all pixels on probe station Determine V_bd after UBM and dicing on full active area and compare to guard ring current measured on wafer level Preliminarily found that guard ring only is not ideal as QA measurement for full sensor Triggered re-measurements of sensors in IBL SC module production TALENT Midterm Review

Test system/Bonn By Slava Setting up a four pixel chip read-out system – ATLAS FE-I4 chips – Based on the newly developed system Characterization of the system performance – Lab – Test beam measurements Viacheslav Filimonov (ESR2, WP2) TALENT Midterm Review Four chip read-out – Introduced in 2012 – New adapter board: burn-in card – Support of up to four FE-I4 chips (four single- or two double chip modules)

CVD - Diamond Beam Monitor Matevz Most focus went to construction, module measurement and integration of DBM telescopes TALENT Midterm Review

DBM module construction William Trischuk: Diamond Beam Monitor14 From TALENT side a collaboration by Bonn, IZM, CERN Found larger area of disconnected bumps – resolved by second reflow in different equipment Tested module function with Sr90 source before and after integration to telescopes MDBM31 (TDBM05) MDBM03 (TDBM01) Hit map on modules during DBM QA Hit map on telescopes (different modules)

Diamond - application CERN/CIVIDEC Use diamonds as beam monitors in accelerator instrumentation and neutron detector Study signal response of scCVDpre/post irradiation to understand charge trapping mechanisms – Use TCT and TSC setups – Over very large temperature range (2K to RT) Develop FPGA-based signal processing for scCVD as beam monitors using the knowledge from measurements above Test beam monitor with converter foil as neutron detector at different energies. TALENT Midterm Review

N ->  Conversion/CIVIDEC Goal: Reject the gamma-background via real-time pulse shape analysis. Non-rectangular = gammas n Li converter foil   Diamond detector Rectangular = alphas n from reactorPulse shapes

Background rejection/CIVIDEC Alpha particle = rectangular shapePhoton = non-rectangular

Depleted CMOS sensors Create depleted volume under n-well -> this serves as volume for particle detection Electronics is include in sensor pixel -> “Smart Pixel” allows first processing of information on sensor Depleted Monolythic Active Pixel Sensor (DMPAS) TALENT Midterm Review Potential as “Sensor” CMOS -> large volume at lower price + larger wafers higher operational voltage and/or higher resistivity processes allow charged particle detection by depletion: Depleted CMOS sensors A number of potential advantages: Sub-pixel structure -> Better spatial resolution Analog amplifier + descriminator on sensor -> digital readout with possibility to combined cells to pixel or strips 18

AMS 180nm HVCMOS-FEI4 TALENT Midterm Review  uses AMS 180 nm HV process (p-bulk) V  deep n-well to put pMOS and nMOS (in extra p-well)  some CMOS circuitry possible (ampl. + discr.)  need / profit from FEI4 and followers  ~10-20 µm depletion depth  1-2 ke signal  various pixel sizes (~20x20 – 50x125 µm 2 )  several prototypes  also strip like geometries possible  replaces „sensor“ (amplified signal) in hybrid pixel bump bonding or glue bonding  indications of radiation hardness to ~ n eq / cm 2 I. Peric et al. Measurements by Simon & Antonello

Signal formation 20 HV2FEI4-V2 w/ radhard design features Sr-90, 1400 e- Fe-55, 1660 e- I. Peric et al. Hybrid detector = CMOS sensor glued to ROC Carried out pre (right) and post (left) irradiation measurements Signal seen after n/cm 2 In the future need to understand the details of charge collection, field and charge trapping Study different processes and foundries with “common cell layout” High voltage processes High resistivity processes ESR 6 join the work on depleted CMOS sensors

HVCMOS after irradiation 21 HV2FEI4 glue bonded to FEI4 and irradiated to 1 x n eq /cm 2 still working DESY testbeam preliminary irradiation tests: using reactor neutrons 1x10 15 and 1x10 16 n eq /cm 2 also to protons and X-ray (862 Mrad !) very preliminary results after 1 x n eq /cm 2 after ~30 days / annealing - source scan with ~25 V bias - still alive, noise occ ~10 -10

Outlook Sensor work wide spread between TALENT members Many TALENT fellow from different WP contribute to sensor RD with many different and interesting measurements! RD on different technologies looks well balanced across – Planar – 3D – Diamonds – CMOS Looking forward to your ideas & comments! TALENT Midterm Review

Thank you for your attention