Chapter 18 - 1 Intrinsic: -- case for pure Si -- # electrons = # holes (n = p) Extrinsic: -- electrical behavior is determined by presence of impurities.

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Presentation transcript:

Chapter Intrinsic: -- case for pure Si -- # electrons = # holes (n = p) Extrinsic: -- electrical behavior is determined by presence of impurities that introduce excess electrons or holes -- n ≠ p Intrinsic vs Extrinsic Conduction 3+ p-type Extrinsic: (p >> n) no applied electric field Boron atom hole n-type Extrinsic: (n >> p) no applied electric field Phosphorus atom valence electron Si atom conduction electron Adapted from Figs (a) & 18.14(a), Callister & Rethwisch 8e.

Chapter Extrinsic Semiconductors: Conductivity vs. Temperature Data for Doped Silicon: --  increases doping -- reason: imperfection sites lower the activation energy to produce mobile electrons. Comparison: intrinsic vs extrinsic conduction extrinsic doping level: /m 3 of a n-type donor impurity (such as P). -- for T < 100 K: "freeze-out“, thermal energy insufficient to excite electrons. -- for 150 K < T < 450 K: "extrinsic" -- for T >> 450 K: "intrinsic" Adapted from Fig , Callister & Rethwisch 8e. (Fig from S.M. Sze, Semiconductor Devices, Physics, and Technology, Bell Telephone Laboratories, Inc., 1985.) Conduction electron concentration (10 21 /m 3 ) T(K) freeze-out extrinsic intrinsic doped undoped

Chapter 18 - Hall Effect A hypothetical metal is known to have an electrical resistivity of 4  (W-m). Through a specimen of this metal that is 25 mm thick is passed a current of 30 A; when a magnetic field of 0.75 tesla is simultaneously imposed in a direction perpendicular to that of the current, a Hall voltage of  V is measured. Compute (a) the electron mobility for this metal, and (b) the number of free electrons per cubic meter.

Chapter Allows flow of electrons in one direction only (e.g., useful to convert alternating current to direct current). Processing: diffuse P into one side of a B-doped crystal. -- No applied potential: no net current flow. -- Forward bias: carriers flow through p-type and n-type regions; holes and electrons recombine at p-n junction; current flows. -- Reverse bias: carriers flow away from p-n junction; junction region depleted of carriers; little current flow. p-n Rectifying Junction p-typen-type p-typen-type Adapted from Fig Callister & Rethwisch 8e p-type n-type -+

Chapter Properties of Rectifying Junction Fig , Callister & Rethwisch 8e.Fig , Callister & Rethwisch 8e.

Chapter Junction Transistor Fig , Callister & Rethwisch 8e.

Chapter MOSFET Transistor Integrated Circuit Device Integrated circuits - state of the art ca. 50 nm line width –~ 1,000,000,000 components on chip –chips formed one layer at a time Fig , Callister & Rethwisch 8e. MOSFET (metal oxide semiconductor field effect transistor)

Chapter 18 - Capacitance Consider a parallel-plate capacitor having an area of 2500 mm 2 and a plate separation of 2 mm, and with a material of dielectric constant 4.0 positioned between the plates. (a) What is the capacitance of this capacitor? (b) Compute the electric field that must be applied for 8.0  C to be stored on each plate.