1. © 2000 Prentice Hall Inc. Figure 3.1 Semiconductor diode.

2. © 2000 Prentice Hall Inc. Figure 3.2 Volt-ampere characteristic for a typical small-signal silicon diode at a temperature of 300 K. Notice the changes of scale.

3. © 2000 Prentice Hall Inc. Figure 3.3 Zener diode symbol.

4. © 2000 Prentice Hall Inc. Figure 3.4 Circuit for load-line analysis.

5. © 2000 Prentice Hall Inc. Figure 3.5 Load-line analysis of the circuit of Figure 3.4.

6. © 2000 Prentice Hall Inc. Figure 3.6 Load-line analysis for Examples 3.1 and 3.2.

7. © 2000 Prentice Hall Inc. Figure 3.7 Diode characteristic for Exercise 3.1.

8. © 2000 Prentice Hall Inc. Figure 3.8 Ideal-diode volt--ampere characteristic.

9. © 2000 Prentice Hall Inc. Figure 3.9 Analysis of a diode circuit using the ideal-diode model. See Example 3.3.

10. © 2000 Prentice Hall Inc. Figure 3.10 Circuits for Exercise 3.4.

11. © 2000 Prentice Hall Inc. Figure 3.11 Half-wave rectifier with resistive load.

12. © 2000 Prentice Hall Inc. Figure 3.12a Half-wave rectifier with smoothing capacitor.

13. © 2000 Prentice Hall Inc. Figure 3.12b & c Half-wave rectifier with smoothing capacitor.

14. © 2000 Prentice Hall Inc. Figure 3.13 Full-wave rectifier.

15. © 2000 Prentice Hall Inc. Figure 3.14 Diode-bridge full-wave rectifier.

16. © 2000 Prentice Hall Inc. Figure 3.15a Clipper circuit.

17. © 2000 Prentice Hall Inc. Figure 3.15b Clipper circuit.

18. © 2000 Prentice Hall Inc. Figure 3.15c Clipper circuit.

19. © 2000 Prentice Hall Inc. Figure 3.16 Circuits with nearly the same performance as the circuit of Figure 3.15.

20. © 2000 Prentice Hall Inc. Figure 3.17a & b See Exercise 3.7.

21. © 2000 Prentice Hall Inc. Figure 3.17c See Exercise 3.7.

22. © 2000 Prentice Hall Inc. Figure 3.17d See Exercise 3.7.

23. © 2000 Prentice Hall Inc. Figure 3.18a & b See Exercise 3.8.

24. © 2000 Prentice Hall Inc. Figure 3.18c See Exercise 3.8.

25. © 2000 Prentice Hall Inc. Figure 3.18d See Exercise 3.8.

26. © 2000 Prentice Hall Inc. Figure 3.19 Example clamp circuit.

27. © 2000 Prentice Hall Inc. Figure 3.20 See Exercise 3.9.

28. © 2000 Prentice Hall Inc. Figure 3.21 Answer for Exercise 3.10.

29. © 2000 Prentice Hall Inc. Figure 3.22 Answer for Exercise 3.11.

30. © 2000 Prentice Hall Inc. Figure 3.23 Diode logic gates.

31. © 2000 Prentice Hall Inc. Figure 3.24 A voltage regulator supplies constant voltage to a load.

32. © 2000 Prentice Hall Inc. Figure 3.25 A simple regulator circuit that provides a nearly constant output voltage from a variable supply voltage.

33. © 2000 Prentice Hall Inc. Figure 3.26 See Example 3.4.

34. © 2000 Prentice Hall Inc. Figure 3.27 Analysis of a circuit containing a singular nonlinear element can be accomplished by load-line analysis of a simplified circuit.

35. © 2000 Prentice Hall Inc. Figure 3.28 See Example 3.5.

36. © 2000 Prentice Hall Inc. Figure 3.29 Zener diode characteristic for Example 3.5.

37. © 2000 Prentice Hall Inc. Figure 3.30 See Exercise 3.13.

38. © 2000 Prentice Hall Inc. Figure 3.31 Diode characteristic, illustrating the Q-point.

39. © 2000 Prentice Hall Inc. Figure 3.32 Illustration of diode currents.

40. © 2000 Prentice Hall Inc. Figure 3.33 Variable attenuator using a diode as a controlled resistance.

41. © 2000 Prentice Hall Inc. Figure 3.34 Dc circuit equivalent to Figure 3.33 for Q-point analysis.

42. © 2000 Prentice Hall Inc. Figure 3.35 Small-signal ac equivalent circuit for Figure 3.33.

43. © 2000 Prentice Hall Inc. Figure 3.36 Intrinsic silicon crystal.

44. © 2000 Prentice Hall Inc. Figure 3.37 Thermal energy can break a bond, creating a vacancy and a free electron, both of which can move freely through the crystal.

45. © 2000 Prentice Hall Inc. Figure 3.38 As electrons move to the left to fill a hole, the hole moves to the right.

46. © 2000 Prentice Hall Inc. Figure 3.39 n-type silicon is created by adding valence five impurity atoms.

47. © 2000 Prentice Hall Inc. Figure 3.40 p-type silicon is created by adding valence three impurity atoms.

48. © 2000 Prentice Hall Inc. Figure 3.41a Shockley--Haynes experiment.

49. © 2000 Prentice Hall Inc. Figure 3.41b Shockley--Haynes experiment.

50. © 2000 Prentice Hall Inc. Figure 3.41c Shockley--Haynes experiment.

51. © 2000 Prentice Hall Inc. Figure 3.42 If a pn junction could be formed by joining a p-type crystal to an n-type crystal, a sharp gradient of hole concentration and electron concentration would exist at the junction immediately after joining the crystals.

52. © 2000 Prentice Hall Inc. Figure 3.43a Diffusion of majority carriers into the opposite sides causes a depletion region to appear at the junction.

53. © 2000 Prentice Hall Inc. Figure 3.43b Diffusion of majority carriers into the opposite sides causes a depletion region to appear at the junction.

54. © 2000 Prentice Hall Inc. Figure 3.43c Diffusion of majority carriers into the opposite sides causes a depletion region to appear at the junction.

55. © 2000 Prentice Hall Inc. Figure 3.44 Under reverse bias, the depletion region becomes wider.

56. © 2000 Prentice Hall Inc. Figure 3.45 Carrier concentrations versus distance for a forward-biased pn junction.

57. © 2000 Prentice Hall Inc. Figure 3.46 Parallel-plate capacitor.

58. © 2000 Prentice Hall Inc. Figure 3.47 As the reverse bias voltage becomes greater, the charge stored in the depletion region increases.

59. © 2000 Prentice Hall Inc. Figure 3.48 Depletion capacitance versus bias voltage for the 1N4148 diode.

60. © 2000 Prentice Hall Inc. Figure 3.49 Hole concentration versus distance for two values of forward current.

61. © 2000 Prentice Hall Inc. Figure 3.50 Small-signal linear circuits for the pn-junction diode.

62. © 2000 Prentice Hall Inc. Figure 3.51 Circuit illustrating switching behavior of a pn-junction diode.

63. © 2000 Prentice Hall Inc. Figure 3.52a Waveforms for the circuit of Figure 3.51.

64. © 2000 Prentice Hall Inc. Figure 3.52b Waveforms for the circuit of Figure 3.51.

65. © 2000 Prentice Hall Inc. Figure 3.52c Waveforms for the circuit of Figure 3.51.

66. © 2000 Prentice Hall Inc. Figure 3.53 Another set of waveforms for the circuit of Figure 3.51. Notice the absence of a storage interval.

67. © 2000 Prentice Hall Inc. Figure 3.54 Circuit used to display the V - I characteristics of the 1N750 Zener diode.

68. © 2000 Prentice Hall Inc. Figure 3.57 SPICE generated plot for the 1N750 Zener diode at 25°C.

69. © 2000 Prentice Hall Inc. Figure 3.59 1N750 characteristics for temperature ranging from 0 to 100°C in 25° increments.