Final Project in RFCS in the MINT Program of the UPC by Sven Günther A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation Final Project in RFCS in the MINT Program of the UPC by Sven Günther

Scope Introduction Wideband LNA LNA Core and Noise Analysis Final LNA Topology Merged LNA and Mixer Measurement and Simulation Results Conclusion RFCS - MINT Program

1. Introduction Why do we need wideband RF receivers? Many number of wireless LAN standards in different frequency bands Use for Software Defined Radio (SDR) with single flexible receiver Less power consumption and chip area RFCS - MINT Program

2. Wideband LNA Topologies Common-gate LNA Resistive feedback LNA Distributed amplifier LNA Inductive source-degeneration common-source LNA (resistive feed back/LC-bandpass at the input) Common-gate LNA Noise Figure: F = 1 + γ/α RFCS - MINT Program

3. LNA Core and Noise Analysis Cascode structure Input impedance RFCS - MINT Program

3. LNA Core and Noise Analysis Assumption that Thermal Noise is Main Noise Source Input Power Matching Condition: RFCS - MINT Program

3. LNA Core and Noise Analysis Noise Factor Optimum Noise Factor for For Rin=100 Ω, Rs=50 Ω, gm1=28.28 mS, gm3=8.28 RFCS - MINT Program

4. Final LNA Topology M3 and M4 pMOS due to less Vth M5 to M8 inductively degenerated for Output Current Noise Reduction RFCS - MINT Program

5. Merged LNA and Mixer Less transistors in signal path Lower non-linearities Less power consumption RFCS - MINT Program

5. Merged LNA and Mixer Final Noise Factor For the design with I=0.7 mA, RL=350 Ω, A=0.25 mV (amplitude of single-ended LO signal) RFCS - MINT Program

6. Measurement and Simulation Results RFCS - MINT Program

7. Conclusion Merged LNA and Mixer realized in 90 nm CMOS Compact Size Low Power Consumption Suitable for multiband operation Power Gain 12.1 dB Voltage Gain 20 dB RF Frequency 0.1 ~ 3.85 GHz IF Freqeuncy 70 MHz NFSSB,min 8.4 dB (fRF=2.1 GHz) NFSSB,max 11.5 dB (fRF=0.1, 3.85 GHz) S11 < -10 dB 1dB CP (Input Ref.) -12.83 dBm (fRF=2.3 GHz) IDD at VDD (Core) 8.15 mA at 1.2 V Area 0.88 mm2 Technology 90 nm CMOS RFCS - MINT Program

Thank you for your Attention! Any Questions? RFCS - MINT Program

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