1. 1 學生 : 李國彰 指導教授：林志明 A Fully Matched High Linearity 2- w PHEMT MMIC Power Amplifier for 3.5 GHz Application ( IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 15, NO. 10, OCTOBER 2005 )

2. 2 Outline Abstract Terms Circuit design 1 Circuit design 2 Process Result Conclusion References

3. 3 Abstract MMIC PA ( monolithic microwave integrated circuit power amplifier ) ( 3.3~3.8 GHz ) ( AlGaAs / InGaAs/GaAs PHEMT ) Application (WCDMA, WLL, MMDS ) Performance (30.4dB small-signal gain ) (34dBm 1-dB power compression) (37.1% PAE) (43.5 dBm IP3 )

4. 4 Terms PHEMT ( pseudomorphic high electronic mobility transistor) WCDMA ( wide band code division multiple access ) WLL ( wireless local loop ) MMDS (multichannel multipoint distribution service ) 1-dB power compression point PAE ( power added efficiency ) IP3 ( third-order intercept point )

5. 5 1 dB power compression point

6. 6 Circuit design 1 De-embedded -two port S parameters ( 1.25mm PHEMT ) -HP8510c vector network analyzer Parasitic parameter ( cold-FET method ) Intrinsic parameter ( hot-FET method ) -Reference [9][10]

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8. 8 Circuit design 2 Output matching network -transfer max output power from the FET to a 50 Ω system Inter-stage matching network -transfer Γ IN,2 to minimize the mismatch loss Input network -improve impedance match for a better input return loss Micro-strip line ( design rule )

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14. 14 Process Fabricated by conventional photolithography on AlGaAs/InGaAs/GaAs PHEMT structure Gate length ( 0.4 μm ) Gate width ( 1.25mm)(Q1)(5mm)(Q2) Dimension -1.97mm*1.33mm

15. 15 Result MMIC( v d =8v,v g =-0.81v, I ds =700mA) (driver)(150mA)(power)(550mA) P 1dB ( 34 dBm ), PAE ( 37.1% )

16. 16 Conclusion Small dimension 34dBm P 1dB, 37.1% PAE 30.4dB small-signal gain 10/5 dB input / output return loss 43.5dBm third-order intercept point Suitable for W-CDMA, MMDS

17. 17 References [1] E. Lan, E. Johnson, B. Knappenberger, and M. Miller, “InGaP PHEMTs for 3.5 GHz W-CDMA applications,” in IEEE MTT-S Int. Dig., vol. 2, 2002, pp. 1039–1042. [2] W. C. B. Peatman, O. Hartin, B. Knappenberger, M. Millerm, and R. Hooper, “Power amplifier for 3.5 GHz WCDMA applications,” in IEEE GaAs IC Dig., Oct. 2000, pp. 71–74. [3] P. Blount, J. Cuggino, and J. McPhee, “A 3.5 GHz fully integrated power amplifier module,” in 23rd Annu. Technical Dig. Gallium Arsenide Integrated Circuit (GaAs IC) Symp., Oct. 21– 24, 2001, pp. 111–114. [4] T. Murae, K. Fujii, and T. Matsuno, “A compact S-band MMIC high power amplifier module,” in IEEE MTT-S Int. Dig., vol. 2, Jun. 11–16, 2000, pp. 943–946.

18. 18 References [5] S. Rockwell, R. Emrick, B. Bosco, S. Franson, M. Miller, E. Johnson, and J. Crowder, “An 8-Watt 3.5 GHz power amplifier with tunable matching,” in 24th Annu. Technical Dig. Gallium Arsenide Integrated Circuit (GaAs IC) Symp., Oct. 20–23, 2002, pp. 185–188. [6] J. J. Komiak and D. Helms, “High-efficiency 20 Watt S/C-band power amplifier MMIC,” in IEEE 14th Annu. Gallium Arsenide Integrated Circuit Symp. Technical Dig., Oct. 4–7, 1992, pp. 187–190. [7] J. J.Komiak, “Octave band elevenwatt power amplifier MMIC,” in IEEE Microwave Millimeter-Wave Monolithic Circuits Symp. Dig., May 7–8, 1990, pp. 35–38. [8] L. E. Larson, RF and Microwave Circuit Design for Wireless Communications. Norwell, MA: Artech House, Inc., 1996. [9] G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microw. Theory Tech., vol. MTT-36, no. 7, pp. 1151–1159, Jul. 1988.

19. 19 References [10] R. Anholt and S. Swirhun, “Equivalent-circuit parameter extraction for cold GaAs MESFETs,” IEEE Trans. Microw. Theory Tech., vol. MTT-39, no. 7, pp. 1243–1247, Jul. 1991. [11] S. C. Cripps, “A theory for the prediction of GaAs FET load-pull power contours,” in IEEE MTT-S Int. Dig., 1983, pp. 221–223. [12], RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 1999. [13] H. Z. Liu, C. C.Wang, Y. H.Wang, C. C. Hsu, C. H. Chang,W.Wu, C. L. Wu, and C. S. Chang, “A single-bias C-band 29 dBm PHEMT MMIC power amplifier,” in Int. Conf. Solid State Devices Materials, Nagoya, Japan, Sep. 18–20, 2002, pp. 636–637. [14] T. Senju, T. Asano, and H. Ishimura, “A very small 3.5 GHz 1 W MMIC power amplifier with die size reduction technologies,” in IEEE Emerging Technologies Symp. Broadband Communications Internet Era Symp. Dig., Sep. 10–11, 2001, pp. 70–73.