FPIX_flip_chip_test module calibration tests November 14 th 2012

Sensor 2 SINTEF x1 bump bonded – Planar 300 μm thick pixel sensor Flip-chipped then reflow Assembled on a new testboard on November 7 th, and 12 th 2012 No post-dicing IV was performed for the first sensor 2

Leakage current First sensor’s before BBM IV was not performed! 3

Full calibration summary – First sensor ROC pixel alive test  Bump-bonding test  4 Second sensor has similar calibration Bias = -150 V

Testing bum-bond with forward bias test Run pixel alive test ROC on with sensor at reverse bias ROC on with sensor at forward bias Idea: – Forward bias will saturate the sensor, causing pre- amplifiers in chip pixels saturate: chip pixels disappear from the pixel alive test map if bump- bonds are in contact 5

Testing bum-bond with forward bias test SINTEF x1 First sensor NO BIAS REVERSE BIAS FORWARD BIAS SINTEF x1 Second sensor 6 REVERSE BIAS = -150 V FORWARD BIAS = +10 V

Radioactive source test (Sr-90) Bias = -150V Mean = 22 ke- MP = 18 ke- 285 μm thick Double pixel hits In one trigger SINTEF x1 Second sensor SINTEF x1 First sensor Bias = -150V Mean = 23 ke- MP = 18 ke- 285 μm thick 7

Charge collection  Charge distribution mean values versus bias voltages  Scan not performed for the second sensor 8

Summary Two SINTEF x1 sensors bump bonded Both sensor ROCs work fine – Good calibrations: Gain, SCurve, Vsf etc – Full calibration Forward bias current and standard methods showed that all bump-bonds are in good contact – IV suggest a good ROC to sensor contact established since ground goes through ROC for sensor HV Standard bump-bond algorithm implemented in PSI DAQ software consistent with forward bias test Source tests showed a good charge collection 9

SINTEF x1 SENSORS 10

11

Past design1x2 in previous production L1, S1, S2, S3, S5 New in this batch. Maximized pixel area S8 L2, L3, S6 New in this batch. Removed asimmetry S4, S7 Note: S1, S2 and S3 have slim edges (S1 the slimmest and increasing in S2 and S3) SINTEF_2011 1x1 sensors 12

November 13,

Sensor: SINTEF_2011_WA15_S5 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflown Assembled on a new testboard on November 13 th

A15 S5 - Leakage current 15

A15 S5 - Full calibration summary (-150V) ROC pixel alive test  Bump-bonding test  (this test found 3185 dead bumps) 16 Bias = -150 V

A15 S5 - Full calibration summary (-400V) ROC pixel alive test  Bump-bonding test  (this test found 1 dead bumps) 17 Bias = -400 V

A15 S5 - Testing bum-bond with forward bias test  SINTEF_2011_WA15_S5 pixel alive test at REVERSE BIAS  SINTEF_2011_WA15_S5 pixel alive test at NO BIAS 18 REVERSE BIAS = -150 V FORWARD BIAS = +10 V pixel alive test at FORWARD BIAS pixel alive test at REVERSE BIAS with LIGHT

A15 S5 - Radioactive source test (Sr-90) Source above sensor center Source above sensor edge Pixel alive map at forward bias  Source placed on different locations above the sensor  No correlation found between forward bias pixel alive map and source hitmap  Can we trust forward bias test? 19 REVERSE BIAS = -150 V FORWARD BIAS = +10 V

A15 S5 - Radioactive source test (Sr-90) Bias = -150V Mean = 25 ke- MP = 21.5 ke- Thickness = 300 μm Double pixel hits In one trigger 20

Sensor: SINTEF_2011_WA15_S6 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 13 th

A15 S6 - Leakage current 22

A15 S6 - Full calibration summary (-150V) ROC pixel alive test  Bump-bonding test  (this test found 2488 dead bumps) 23 Bias = -150 V

A15 S6 - Full calibration summary (-300V) ROC pixel alive test  Bump-bonding test  (this test found 6 dead bumps) -400 V has also identical results 24 Bias = -300 V

A15 S6 - Testing bum-bond with forward bias test  SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS  SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA15_S6 pixel alive test at NO BIAS ~1200 pixels Forward bias: 1200 dead bumps PSI software test: 2488 dead bumps 25 REVERSE BIAS = -150 V FORWARD BIAS = +10 V

A15 S6 - Radioactive source test (Sr-90) Bias = -150V Mean = 20.7 ke- MP = 17.5 ke- Thickness = 300 μm Source hit map 26

Summary SINTEF 2011 S5 and S6 sensors bump bonded on Both sensor ROCs work fine – Good calibrations: Gain, SCurve, Vsf etc – Full calibration with minimum effort Sensor breakdown voltages increased after assembly – No breakdown observed up to 800 V Bump-bond tests – Forward bias method: 1000 (S5), 1200 (S6) dead bumps – PSI method: 3185 (S5), 2488 (S6) dead bumps Source tests showed a good charge collection – Double hits in one trigger needs to removed from analysis – S6 will be retested with source 27

November 14,

Sensor: SINTEF_2011_WA15_S7 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 14 th 2012 IVs on wafer, before and after BBM, and on testboard measured 29

A15 S7 - Leakage current 30

A15 S7 - Full calibration summary ROC pixel alive test  Bump-bonding test  31 Bias = -200 V

A15 S7 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS pixel alive test at FORWARD BIAS  SINTEF_2011_WA15_S6 pixel alive test at NO BIAS 32 pixel alive test at REVERSE BIAS with LIGHT REVERSE BIAS = -200 V FORWARD BIAS = +10 V

A15 S7 - Radioactive source test (Sr-90) Bias = -200V Mean = 25 ke- MP = 21.7 ke- Thickness = 300 μm Source hit map 33

Sensor: SINTEF_2011_WA15_S8 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 14 th 2012 IVs on wafer, before and after BBM, and on testboard measured 34

A15 S8 - Leakage current 35

A15 S8 - Full calibration summary ROC pixel alive test  Bump-bonding test  36 Bias = -200 V

A15 S8 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS 37 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA15_S6 pixel alive test with LIGHT at REVERSE BIAS

A15 S8 - Radioactive source test (Sr-90) Bias = -200V Mean = 26 ke- MP = 22.2 ke- Thickness = 300 μm Source hit map 38

Sensor: SINTEF_2011_WA17_S5 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before and after BBM, and on testboard measured 39

A17 S5 - Leakage current 40

A17 S5 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 67 dead bumps) 41 Bias = -200 V

A17 S5 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S5 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S5 pixel alive test at REVERSE BIAS 42 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S5 pixel alive test with LIGHT at REVERSE BIAS

A17 S5 - Radioactive source test (Sr-90) Bias = -200V Mean = 22.3 ke- MP = 19.7 ke- Thickness = 300 μm Source hit map 43

Sensor: SINTEF_2011_WA17_S6 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before and after BBM, and on testboard measured 44

A17 S6 - Leakage current 45

A17 S6 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 6 dead bumps) 46 Bias = -200 V

A17 S6 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S6 pixel alive test at REVERSE BIAS 47 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S6 pixel alive test with LIGHT at REVERSE BIAS

A17 S6 - Radioactive source test (Sr-90) Bias = -200V Mean = 26 ke- MP = 21.2 ke- Thickness = 300 μm 48 Source hit map

Sensor: SINTEF_2011_WA17_S7 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before, and on testboard measured 49

A17 S7 - Leakage current 50

A17 S7 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 15 dead bumps) 51 Bias = -200 V

A17 S7 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S7 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S7 pixel alive test at REVERSE BIAS 52 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S7 pixel alive test with LIGHT at REVERSE BIAS

A17 S7 - Radioactive source test (Sr-90) Bias = -200V Mean = 27 ke- MP = 21.4 ke- Thickness = 300 μm 53 Source hit map

Sensor: SINTEF_2011_WA17_S8 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before, and on testboard measured 54

A17 S8 - Leakage current 55

A17 S8 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 2 dead bumps) 56 Bias = -200 V

A17 S8 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S8 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S8 pixel alive test at REVERSE BIAS 57 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S8 pixel alive test with LIGHT at REVERSE BIAS

A17 S8 - Radioactive source test (Sr-90) Bias = -200V Mean = 25.5 ke- MP = 21 ke- Thickness = 300 μm 58 Source hit map

Sensor: SINTEF_2011_WA16_S5 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 59

A16 S5 - Leakage current 60

A16 S5 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 2 dead bumps) 61 Bias = -200 V

A16 S5 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S5 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S5 pixel alive test at REVERSE BIAS 62 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S5 pixel alive test with LIGHT at REVERSE BIAS

A16 S5 - Radioactive source test (Sr-90) Bias = -200V Mean = 26.7 ke- MP = 21.7 ke- Thickness = 300 μm 63 Source hit map

Sensor: SINTEF_2011_WA16_S6 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 64

A16 S6 - Leakage current 65

A16 S6 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 13 dead bumps) 66 Bias = -200 V

A16 S6 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S6 pixel alive test at REVERSE BIAS 67 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S6 pixel alive test with LIGHT at REVERSE BIAS

A16 S6 - Radioactive source test (Sr-90) Bias = -200V Mean = 27 ke- MP = 22.6 ke- Thickness = 300 μm 68 Source hit map

Sensor: SINTEF_2011_WA16_S7 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 69

A16 S7 - Leakage current 70

A16 S7 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 5 dead bumps) 71 Bias = -200 V

A16 S7 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S7 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S7 pixel alive test at REVERSE BIAS 72 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S7 pixel alive test with LIGHT at REVERSE BIAS

A16 S7 - Radioactive source test (Sr-90) Bias = -200V Mean = 29 ke- MP = 25 ke- Thickness = 300 μm 73 Source hit map

Sensor: SINTEF_2011_WA16_S8 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 74

A16 S8 - Leakage current 75

A16 S8 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 13 dead bumps) 76 Bias = -200 V

A16 S8 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S8 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S8 pixel alive test at REVERSE BIAS 77 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S8 pixel alive test with LIGHT at REVERSE BIAS

A16 S8 - Radioactive source test (Sr-90) Bias = -200V Mean = 25.6 ke- MP = 21.3 ke- Thickness = 300 μm 78 Source hit map

Sensor: SINTEF_2011_WA18_S5 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 17 th 2012 IVs on wafer, before, and on testboard measured 79

A18 S5 - Leakage current 80

A18 S5 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 493 dead bumps) Not repeatable and degrades at higher biases 81 Bias = -200 V

A18 S5 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA18_S5 pixel alive test at FORWARD BIAS  SINTEF_2011_WA18_S5 pixel alive test at REVERSE BIAS 82 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA18_S5 pixel alive test with LIGHT at REVERSE BIAS

A18 S5 - Radioactive source test (Sr-90) Bias = -200V Mean = 27.6 ke- MP = 22.5 ke- Thickness = 300 μm 83 Source hit map

Sensor: SINTEF_2011_WA18_S6 Planar 300 μm thick Bump bonded to a ROC on Flip-chipped then reflow Assembled on a new testboard on November 17 th 2012 IVs on wafer, before, and on testboard measured 84

A18 S6 - Leakage current 85

A18 S6 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 1 dead bumps) 86 Bias = -200 V

A18 S6 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA18_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA18_S6 pixel alive test at REVERSE BIAS 87 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA18_S6 pixel alive test with LIGHT at REVERSE BIAS

A18 S6 - Radioactive source test (Sr-90) Bias = -200V Mean = 30 ke- MP = 25 ke- Thickness = 300 μm 88 Source hit map

November 27,

Noise study SCurve tests performed at – 22 °C – Vbias [-V] = 25, 50, 75, 100, 125, 150, 175, 200, 250, and 300 – Almost no noise date at Vbias = -25 V 90

SINTEF 2011 WA15 91

SINTEF 2011 WA16 92

SINTEF 2011 WA17 93