December 9. 2008 U-In Chung, Samsung ITRS ERD/ERM in KOREA.

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Presentation transcript:

December U-In Chung, Samsung ITRS ERD/ERM in KOREA

2 KSIA Korea TWGs ERD(ERM) WG ERD ; U-In Chung (Samsung) ERMemory Leader : In-Seok Yeo (Samsung) S.W.Chung(Hynix), H.S.Hwang (GIST), T.W.Kim (Sejong univ.), H.C.Sohn (Yonsei univ.), J.I.Hong (Yonsei univ.), C.S.Hwang(Seoul National univ.) ERDevice Leader : Jong-Ho Lee (Kyungpook univ.) S.G.Kim(Dongbu high tech.), H.C.Shin(Seoul national univ.), Y.G.Choi(KAIST) ERArchi. Leader : Su-Hwan Kim (Seoul national univ.) K.W.Kwon (SungKyunKwan univ.) ERM ; Liaison : U-In Chung ERMaterial Leader; Dae-Hong Ko (Yonsei univ.) J.M Myoung(Yonsei univ.), S.H.Hong(Seoul national univ.), J.H.Lee(Hanyang univ.), B.J.Cho(KAIST) IRC : Joo-Tae Moon (samsung) Jae-Sung Roh (Hynix) Yoon-Jong Lee (Dongbu) ERD/ERM Organization & Member

3 Relations in between organization KSIA TWG of Korea ERD/ERM WG (U-in Jung) INC (Jin-ho Ahn) 4 Group/ 19 member Device Maker Researcher (Samsung, Hynix, Dong-bu) Professor (8 Univ. Seoul nat. univ. etc) Member Device Maker Technology Group (Samsung, Hynix, Dong-bu) TND (Tera Level Nano Device) Research group NSI (Nano systems institute, Seoul Univ.) COSAR R&D Promotion [ITRS] [INC]

4 ERD(ERM) WG INC WG Sharing WG members 1.Maintaining relationship between ITRS, INC and National Projects by sharing working group members National Projects Leaders KSIA / COSAR Key Direction(1) 2. Active interaction with ITRS ERD members and Korea ERD/ERM members through ITWG activities and forums

5 3. Regional interest ; Narrowing ~10nm memory candidates a. Emerging Research memory : Narrowing memory candidates Key Direction(2) Nanomechanical Memory Fuse- Antifuse Memory Ionic Memory Electronic Effects Memory Macro- molecular Memory Molecular Memories Storage Mechanism Electrostatically- controlled mechanical switch Multiple mech. Ion transport and redox reaction Multiple mechanisms Multiple mech. Not known Cell Elements 1T1R or 1D1R 1T1R or 1D1R 1T1R or 1D1R 1T1R or 1D1R 1T1R or 1D1R Device Types 1) Nanobridge / cantilever 2) telescoping CNT 3) Nanoparticle M-I-M (e.g., Pt/NiO/P t) 1) cation migration 2) anion migration 1) Charge trapping 2) Mott transition 3) FE barrier effects M-I-M (nc)-I-M Bi-stable switch

6 Key Direction(3) 3. Regional interest ; b. Emerging Research Device : - GaAs and Ge in ERD - Focus on Energy effective devices (ex. BTB devices) c. Emerging Research Architectures : - Focus on 3D Architectures - CMOL, Molecular switch bar : Same meaning? Taking out ‘molecular’ in table8 d. Emerging Research Materials : - Too much focus on Devise, Focus on Material for memory - Many forums on memory materials for MLC and 3 D