Assembly and Packaging TWG What has changed in the last 12 months?

What Has Changed In The Last 12 Months? With the continuous shrinking of device features and the emergence of new device types everything is changing. A few key changes in the last 12 months are the focus of this presentation. Change dictated by Moore’s Law scaling Copper wire bonding moving toward volume leadership Heterogeneous integration for SiP 2.5D moves the interposer into volume manufacturing 3D integration Thinning Photonics getting closer to the transistors Requirements for packaging MEMS devices

Single Chip Package Technology Requirement Challenges still remain for conventional single chip packaging The continuous drive to reduce cost remains one of the most challenging requirements

Copper Wire Bonding Is Taking Over Driven by: Strong mechanical properties Better heat dissipation Increases power ratings Thinner wire diameters It is cheaper than gold Improved process control in now delivering No reliability issues No yield issues Some vendors don’t yet have this process control

Evolution Of Heterogeneous Integration: 2.5D a bridge to 3D Time WLCSP FO-WLP FO-WLP SiP Heterogeneous Integration IC + Assembly MEMs & Wireless Wirebond BGA FC BGA 3D IC die stack Stacked Die PoP EPS 2.5D IC (Si Interposer) Heterogeneous Integration Assembly + Substrate

The Vision Of Complex Sip Is Finally Entering The Market Sony’s CXD5315GG Package in PlayStation Vita 5 Layers in the stack Processor Wide IO SDRAM 2 mobile DRAM Silicon spacer between the 2 mobile DRAM

Packaging is the enabling tool for “More than Moore” Packaging is the enabling tool for “More than Moore”. It allows consumer products that are ever smaller, more powerful, cheaper, require less power and reliability ensuring a useful life that meets the expectation of the customer.

Why Has 3D TSV Taken So Long? The typical response is: Cost Competition from existing technology Technical inertia Supply chain maturity “Truth is” it has not been slow. flip chip 30 years copper wire bond 30 years 3D-TSV 6 years assuming 2013 for volume production

Why Has 3D TSV Been So Fast? It has been driven by: CMOS shrinking can no longer keep up the pace of progress Enabling packaging technologies are available Interposers TSV Performance advantages are compelling Reduced power Reduced latency Increased bandwidth Reduced size

Silicon Interposer deals with a wide IO interface between devices e.g logic, memory, Fan-out interface from device to package/board high re-routing capability and TSV interconnects SnAg bumps for FC Interconnects and Cu pillar bumps for board assembly

Interposers Are Now In Production Interposer substrate has more than 10,000 routing connections Compared with standard I/O connections it provides: > 100X die-to-die bandwidth per watt one-fifth the latency Uses no high-speed serial or parallel I/O resources. This is only 2.5D Full 3D is even better

3D Integration - TSV

3D Products Are Sampling Today Four layer stacks are sampling today. The industry is getting ready for high volume with the next generation. Greater density Lower latency Higher bandwidth

We Are Thinning Everything What is driving this change? Thinning is delivering what the consumer wants Thinner devices and products Flexible devices and products Increases functional density Stacking needs it It is the key to low cost TSV High yield cost effective thinning processes are available Packaging challenges remain for cost effective handling of thinned die and wafers

We Are Thinning Everything What is being thinned? Wafers and die Die attach layers Lead frames Underfill Package substrates Mold caps Example: Total package height for BGA counting solder balls is 400um down from 500um a year ago.

Optical IO In-to And Out-of Package There is a drive to move photonics as close to the transistors as possible to increase bandwidth and reduce power requirement The challenges increase with each node due to large size of E to O and O to E conversion

MEMS Are Now Shipping For Diverse Applications These products have unique packaging challenges and new solutions are being developed. Package cost is often greater than 50% of product cost and cost remains a factor restraining broader adoption of MEMS solutions Current state of the art production MEMS oscillators Sensors with ten degrees of freedom 3-axis gyro 3-axis magnetometer 3-axis accelerometer Pressure sensor

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