1NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Trends in semiconductor technology Jurriaan Schmitz Chairholder of Semiconductor Components.

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1NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Trends in semiconductor technology Jurriaan Schmitz Chairholder of Semiconductor Components MESA+ institute University of Twente

2NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The Microstrip Gas Counter and its application in the ATLAS inner tracker Fragment of my introductory talk, October 14, 1994: We want to use the MSGC in an experiment named ATLAS. Unfortunately this will only be conducted from the year 2002 onwards. DISCLAIMER: Consider my upcoming statements on the future of CMOS as predictive as the above

3NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Contents MOSFET basics The start of MOS technology Moore’s Law The ITRS roadmap Modern CMOS technology The challenges ahead The role of academia

4NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Semiconductor essentials n-type doped semiconductor e.g. silicon with phosphorus impurity electrons determine conductivity p-type doped semiconductor e.g. silicon with Al impurity holes determine conductivity p-n junction: current can only flow one way! Semiconductor diode

5NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The field effect accumulation - - depletion inversion

6NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The field effect transistor Gate voltage controls the current between source and drain sourcedrain gate

7NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente

8NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The first transistor (re-created)

9NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Kilby’s first IC 1.5 mm x 1 mm Germanium

10NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Fairchild’s flip-flop transistors, 5 resistors Notice metal interconnect 1.5 mm

11NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente RCA, 1962 Logic chip, 16 transistors First MOSFET IC

12NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Year GordonMoore1965 Moore’s Law (1965) Progress in technology: At the same cost, one can add more and more components on a chip. The number of components doubles each 1.5 years. Number of components per chip Fairchild

13NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente

14NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente 1976: Apple I motherboard 1981: The first PC: IBM’s 5150 PC Intel microprocessor DOS operating system

15NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente INTEL microprocessors Year Number of transistors

16NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Reflections on Moore’s Law Exponential growth with time is universal: passenger airplanes, cargo ships, hard disk drives, nuclear fusion, … Collider energy? Luminosity? …but only for a while! So: it’s not particularly Moore’s; and it’s not a law.

17NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Technology driven exponential progress Velocity (km/hour) year Wright brothers Concorde

18NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Impact of Moore’s Law Device dimensions shrink (scaling) Cost per function decreases (~ 35% per year) Power per function decreases Speed increases … application field of semiconductors increases! (e.g. personal computers, handheld telephones, solid state audio, speech recognition)

19NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente

20NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente You might still consider this big… Modern transistorInfluenza virus

21NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente What does CMOS scaling bring us? Lower power operation Cheaper integrated circuits (25% p.y.) Gate Length (nm) f T (GHz) Higher frequency operation 1950, 6$2000, 145$

22NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente But also… Higher price for small quantities Reduced static noise margin Increased gate leakage # Masks increases Mask cost increases Fab COO increases Lower supply voltage Smaller devices, larger fluctuations

23NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente

24NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Transistor Technology Well Technology

25NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Transistor downscaling Reduction of gate length (lithography) Increase of impurity concentrations Decrease of gate dielectric Reduction of source and drain dimensions Brews’ Law: L min = 0.4 [ x j t ox (W s + W d ) 2 ] 1/3 L min : minimum gate length with normal behaviour x j : source and drain depth t ox : gate dielectric thickness W s, W d : depletion widths of source and drain junctions

26NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Lithography EUV prototype

27NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The interconnect shrink 0.5 µm technology 0.1 µm technology Al SiO 2 W Cu Low-K

28NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The Red Brick Wall(s) Further scaling of the circuit: Atomic dimensions are in sight Gate dielectric needs replacement Gate electrode needs replacement Interconnect becomes a speed and power bottleneck The economy: Fabrication plants get too expensive to build (3 B$) Semiconductor market is too big to grow much further

29NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The power problem Power per transistor decreases; but not the power density! Fortunately, most ICs do better than Pentiums…

30NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Atomic dimensions and the loss of information Dissipation problems Quantum fluctuations

31NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Semiconductor economy Traditional scaling can no longer facilitate the strong market growth seen in the past 1) The semiconductor industry has acquired a strong position in the total electronics market 2) New technology generations show progressively less benefits over their predecessor

32NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente The design and verification gaps Do we want nanotechnology?

33NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Semiconductor market development Annual turnover (G$) No clear trend - a mature market? Actual (Dataquest) 2002 Forecast (6% growth)

34NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Research at MESA+ MESA+: 18 participating chairs from TN, CT, and EL Nanotechnology, microsystems, materials science and microelectronics ~ 400 people, including over 200 PhD’s and postdocs Yearly turnover ~ 31M€ 1250 m 2 fully equipped clean room A materials analysis laboratory Several satellite laboratories

35NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Running projects High-k ALCVD Cool dielectrics IC-technology Cu barriers ALCVD ESD in CMOS DevicesReliability Micro Gas sensors Deuterium dielectrics STW Philips EU E-T-M in interconnect Plasma damage 1/f noise STW Philips FOM Reliable RF STW Philips Light from Silicon STW Ends soon NEW

36NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Submitted new projects Smart Oxides IC-technology Low Temp devices NBTI DevicesReliability High K reliability Vulcano STW Philips STW Planned new projects EU

37NIKHEF, July 4, 2003Jurriaan Schmitz, University of Twente Outlook There is still plenty of room at the bottom Standard CMOS scaling will end soon New technologies will emerge; NOT for ordinary computing Light-silicon interaction: huge potential, physics? Novel devices may well include particle detectors…