Bump Bonding and Thinning of Hybrid Pixel Detectors Kiyoshi Tanida (RIKEN) Johann M. Heuser (RIKEN) PHENIX upgrade workshop, Aug 2002 Contents Bump bonding.

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Presentation transcript:

Bump Bonding and Thinning of Hybrid Pixel Detectors Kiyoshi Tanida (RIKEN) Johann M. Heuser (RIKEN) PHENIX upgrade workshop, Aug 2002 Contents Bump bonding of hybrid Si pixel detector R&D Thinning Status of PHENIX activities Summary

Bump bonding of hybrid Si pixel detectors Hybrid -- sensor/readout chip separately produced  bonding High density -- wire bonding impossible  Bump bonding readout chips sensor

Bump bonding of hybrid Si pixel detectors (2) Advanced technology -- a small number of specialized vendors available worldwide. Material: Solder or Indium Maximum wafer size Minimum wafer thickness Significant R&D required

R&D ALICE, LHCb, NA60 in collaboration with VTT company, Finland. 1 cell: 50  m x 425  m Bump size: 20  m  single chip (32x256 cells) multi chip ladder (5 chips) -- successful R&D for whole 8" wafer ongoing 425  m 50  m

Thinning Necessary for shorter radiation length Not yet done -- R&D ongoing at CERN goal sensor: 300  m  200  m readout chip: 750  m  150  m Performed before dicing  dicing/bump bonding difficult low mass readout bus also required

Status of PHENIX activities Just started. Will learn from CERN experience RIKEN is now contacting CERN to access thinning and bump bonding technologies.

Summary Bump bonding -- significant R&D required for thinned whole wafer CERN is leading R&D studies Thinning is also an important R&D issue PHENIX has started to access these technologies via RIKEN effort. We will learn from CERN experience.