MOSFET Piecewise Models ECE 2204. Cut-off Region NMOSPMOS I G = I D = I S = 0 V GS ≤ V TN V GS ≥ V TP.

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

Goals Investigate circuits that bias transistors into different operating regions. Two Supplies Biasing Four Resistor Biasing Two Resistor Biasing Biasing.

ECA1212 Introduction to Electrical & Electronics Engineering Chapter 6: Field Effect Transistor by Muhazam Mustapha, October 2011.

EE130/230A Discussion 12 Peng Zheng 1. Velocity Saturation Velocity saturation limits I Dsat in sub-micron MOSFETS Simple model: E sat is the electric.

Physical structure of a n-channel device:

ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc. Lecture 28 Field-Effect Transistors.

Metal-Oxide-Semiconductor Fields Effect Transistors (MOSFETs) From Prof. J. Hopwood.

University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.

Chapter 6 The Field Effect Transistor

1ECE 584, Summer 2002Brad Noble Chapter 3 Slides Early Voltage in MOSFETs Due to channel length modulation:

10/8/2004EE 42 fall 2004 lecture 171 Lecture #17 MOS transistors MIDTERM coming up a week from Monday (October 18 th ) Next Week: Review, examples, circuits.

S. RossEECS 40 Spring 2003 Lecture 20 Today we will Review NMOS and PMOS I-V characteristic Practice useful method for solving transistor circuits Build.

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

Lecture #16 OUTLINE Diode analysis and applications continued

(N-Channel Metal Oxide Semiconductor)

The metal-oxide field-effect transistor (MOSFET)

Fig. 5.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross section. Typically L = 1 to 10 m, W = 2 to 500.

Digital Integrated Circuits A Design Perspective

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Spring 2007EE130 Lecture 36, Slide 1 Lecture #36 ANNOUNCEMENTS Updated information for Term Project was posted on 4/14 Reminder: Coffee Hour today at ~4PM!

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

© Electronics Recall Last Lecture The MOSFET has only one current, I D Operation of MOSFET – NMOS and PMOS – For NMOS, V GS > V TN V DS sat = V GS – V.

Spring 2007EE130 Lecture 38, Slide 1 Lecture #38 OUTLINE The MOSFET: Bulk-charge theory Body effect parameter Channel length modulation parameter PMOSFET.

Microelectronics Circuit Analysis and Design Donald A. Neamen

VLSI design Lecture 1: MOS Transistor Theory. CMOS VLSI Design3: CMOS Transistor TheorySlide 2 Outline  Introduction  MOS Capacitor  nMOS I-V Characteristics.

Spring 2007EE130 Lecture 40, Slide 1 Lecture #40 OUTLINE The MOSFET: Velocity saturation Reading: Chapter 19.1.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Transistor Characteristics EMT 251. Outline Introduction MOS Capacitor nMOS I-V Characteristics (ideal) pMOS I-V Characteristics (ideal)

MOSFET As switches. Regions of Operation In analogue electronics, the MOSFETs are designed to operation in the pinch-off or saturation region. ▫They are.

Metal-Oxide-Semiconductor Field Effect Transistors

Lecture 19 OUTLINE The MOSFET: Structure and operation

Types of MOSFETs ECE 2204.

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

FET Current Mirrors ECE Current Sources Ideal independent current sources are difficult to make and are almost impossible to fabricate on an integrated.

ECE 342 Electronic Circuits 2. MOS Transistors

EE213 VLSI Design S Daniels Channel Current = Rate of Flow of Charge I ds = Q/τ sd Derive transit time τ sd τ sd = channel length (L) / carrier velocity.

Ch 10 MOSFETs and MOS Digital Circuits

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

The Devices Digital Integrated Circuit Design Andrea Bonfanti DEIB

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.

Chapter 5: Field Effect Transistor

EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V

Chapter 4 Field-Effect Transistors

CSCE 613: Fundamentals of VLSI Chip Design Instructor: Jason D. Bakos.

ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS.

ECE442: Digital ElectronicsCSUN, Spring-2010-Zahid MOS Transistor ECE442: Digital Electronics.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors.

UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY

Structure and Operation of MOS Transistor

EE141 © Digital Integrated Circuits 2nd Devices 1 Lecture 5. CMOS Device (cont.) ECE 407/507.

EE141 © Digital Integrated Circuits 2nd Devices 1 Goal of this lecture  Present understanding of device operation  nMOS/pMOS as switches  How to design.

MOSFET Structure p-Si n+ L Source Gate Drain Field Oxide Gate Oxide

MOSFET DC circuit analysis Common-Source Circuit

1ECE 584, Summer 2002Brad Noble Chapter 3 Slides Cross Sectional View of FET.

Integrated Circuit Devices Professor Ali Javey Summer 2009 MOSFETs Reading: Chapters 17 & 18.

1 Figure 4.10 (a) Circuit symbol for the n-channel enhancement-type MOSFET. (b) Modified circuit symbol with an arrowhead on the source terminal to distinguish.

MOS Transistor Other handouts Project Description Other “assignments”

The MOS Transistor Polysilicon Aluminum. The NMOS Transistor Cross Section n areas have been doped with donor ions (arsenic) of concentration N D - electrons.

1 Other Transistor Topologies 30 March and 1 April 2015 The two gate terminals are tied together to form single gate connection; the source terminal is.

EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,

Recall Lecture 17 MOSFET DC Analysis 1.Using GS (SG) Loop to calculate V GS Remember that there is NO gate current! 2.Assume in saturation Calculate I.

Field Effect Transistor (FET)

CP 208 Digital Electronics Class Lecture 6 March 4, 2009.

ECE 333 Linear Electronics

MOSFET #5 OUTLINE The MOSFET: Sub-threshold leakage current

Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Presentation transcript:

MOSFET Piecewise Models ECE 2204

Cut-off Region NMOSPMOS I G = I D = I S = 0 V GS ≤ V TN V GS ≥ V TP

Nonsaturation/Triode Region NMOSPMOS V GS ≥ V TN V DS ≤ V GS – V TN V GS ≤ V TP V DS ≥ V GS - V TP I D = Kn[(V GS – V TN )V DS – 0.5V DS 2 ]I D = Kp[(V GS - V TN )V DS – 0.5V DS 2 ] R DSon = V DS /I D I G = 0I D ≤ I Dsat

Saturation/Pinch-off Region NMOSPMOS V GS ≥ V TN V DS ≥ V DSsat V GS ≤ V TP V DS ≤ V DSsat V DSsat = V GS – V TN V DSsat = V GS - V TP I D = (Kn/2)(V GS – V TN ) 2 = (Kn/2)V DSsat 2 I D = (Kp/2)(V GS - V TP ) 2 = (Kp/2)V DSsat 2 I G = 0, I D = I Dsat (a constant)

Summary of I-V Relationships: Enhancement Mode FETs RegionNMOSPMOS Nonsaturation /Triode v DS ≤v DS (sat)v DS ≥v DS (sat) Saturation/ Pinch-off v DS ≥v DS (sat)v SD >v SD (sat) Enhancement Mode V TN > 0VV TP < 0V Note: Depletion Mode V TN < 0VV TP > 0V

Transition between models NMOS enhancement mode ▫ Cut-off and Saturation/Pinch-of ▫ Nonsaturation/Triode and Saturation/Pinch-off PMOS enhancement mode ▫ Cut-off and Saturation/Pinch-of ▫ Nonsaturation/Triode and Saturation/Pinch-off

Conduction Parameters NMOSFET PMOSFET where:

Questions How does V TN or V TP change with the doping concentration of the channel? To limit the power dissipated in a FET operating in the triode region, R DSon should be as small as possible. Should V GS be large or small? If the oxide is changed to a high K dielectric, will I D increase or decrease? To keep the drain current unchanged, should the thickness of the oxide increase or decrease? If you fabricated a NMOS transistor in Si and GaAs with the same doping concentrations, dimensions, and same oxide material), will I D (GasAs) be larger or smaller than I D (GasAs) when V DS = V GS – V TN ?